A field-effect transistor-based room-temperature quantum current source von Cheung, Kin P., O'Sullivan, Barry J.

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Modification of hurling helmets causing penetrating upper limb injury: A case series demonstrating opportunity for improved player safety von Quinlan, Christine S., Farrell, Tony, Joyce, Cormac W., Kelly, Jason, O'Sullivan, Sean T., O'Sullivan, J. Barry

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Radial Artery Aneurysm Arising from the Stump of a Ligated Arteriovenous Fistula in a Kidney Transplant Patient von Dhannoon, Amenah, Sheil, Fiachra, McHugh, Seamus, O'Sullivan, J. Barry

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Variation in treatment and outcome in the early stage oral cavity squamous cell carcinoma von Gogarty, Darragh S., Lennon, Paul, Deady, Sandra, Barry O’Sullivan, J., McArdle, Orla, Leader, Mary, Sheahan, Patrick, O’Neill, James Paul

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Loss Analysis and Design Optimization of Large-Area High-Efficiency Back-Contacted Silicon Solar Cells von O'Sullivan, Barry J., Jambaldinni, Shruti, Singh, Sukhvinder, Kyuzo, Manabu, Debucquoy, Maarten, Szlufcik, Jozef

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Repair of Anterior Cleft Palate Fistulae with Cancellous Bone Graft: A Simple Technique That Facilitates Dental Reconstruction von Martin-Smith, James D., O'Sullivan, J. Barry, Duggan, Laura, O'Mahony, Aisling, Orr, David J. A.

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Estimation of fixed charge densities in hafnium-silicate gate dielectrics von Kaushik, V.S., O'Sullivan, B.J., Pourtois, G., Van Hoornick, N., Delabie, A., Van Elshocht, S., Deweerd, W., Schram, T., Pantisano, L., Rohr, E., Ragnarsson, L.-A., De Gendt, S., Heyns, M.

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Effectiveness of Nitridation of Hafnium Silicate Dielectrics: A Comparison Between Thermal and Plasma Nitridation von O'Sullivan, B.J., Kaushik, V.S., Everaert, J.-L., Trojman, L., Ragnarsson, L.-A., Pantisano, L., Rohr, E., DeGendt, S., Heyns, M.

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Methodology for Flatband Voltage Measurement in Fully Depleted Floating-Body FinFETs von Ferain, Isabelle, Pantisano, Luigi, O'Sullivan, Barry J., Singanamalla, Raghunath, Collaert, Nadine, Jurczak, Malgorzata, De Meyer, Kristin

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Accurate gate impedance determination on ultraleaky MOSFETs by fitting to a three-lumped-parameter model at frequencies from DC to RF von SAN ANDRES, Enrique, PANTISANO, Luigi, RAMOS, Javier, ROUSSEL, Philippe J, O'SULLIVAN, Barry J, TOLEDANO-LUQUE, Maria, DEGENDT, Stefan, GROESENEKEN, Guido

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Work-Function Engineering for 32-nm-Node pMOS Devices: High-Performance TaCNO-Gated Films von O'Sullivan, B.J., Mitsuhashi, R., Ito, S., Oikawa, K., Kubicek, S., Paraschiv, V., Adelmann, C., Veloso, A., HongYu Yu, Schram, T., Biesemans, S., Nakabayashi, T., Ikeda, A., Niwa, M.

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First principles investigation of charge transition levels in monoclinic, orthorhombic, tetragonal, and cubic crystallographic phases of HfO2 von Alam, Md Nur Kutubul, Clima, Sergiu, J. O'Sullivan, Barry, Kaczer, Ben, Pourtois, Geoffrey, Heyns, Marc, Van Houdt, Jan

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Impact of Interface Layer on Device Characteristics of Si:HfO2-Based FeFET's von Jung, Taehwan, O'Sullivan, Barry J, Ronchi, Nicolo, Linten, Dimitri, Shin, Changhwan, Van Houdt, Jan

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High- \kappa Metal Gate MOSFETs: Impact of Extrinsic Process Condition on the Gate-Stack Quality-A Mobility Study von Trojman, Lionel, Ragnarsson, Lars-Ake, O'Sullivan, Barry J., Rosmeulen, Maarten, Kaushik, Vidya S., Groeseneken, Guido V., Maes, Herman E., De Gendt, Stefan, Heyns, Marc

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Electron trapping in ferroelectric HfO2 von Izmailov, Roman A, Strand, Jack W, Larcher, Luca, O'Sullivan, Barry J, Shluger, Alexander L, Afanas'ev, Valeri V

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Electron trapping in ferroelectric HfO 2 von Izmailov, Roman A., Strand, Jack W., Larcher, Luca, O'Sullivan, Barry J., Shluger, Alexander L., Afanas'ev, Valeri V.

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Thermal recovery from stress-induced high-k dielectric film degradation von O'Sullivan, Barry J, Pantisano, Luigi, Roussel, Philippe, Degraeve, Robin, Groeseneken, Guido, De Gendt, Stefan, Heyns, Marc

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Charge characterization in metal-gate/high-k layers: Effect of post-deposition annealing and gate electrode von O'Sullivan, Barry J, Pourtois, Geoffrey, Kaushik, Vidya S, Schram, Tom, Kittl, Jorge, Pantisano, Luigi, De Gendt, Stefan, Heyns, Marc

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High-K Metal Gate MOSFETs: Impact of Extrinsic Process Condition on the Gate-Stack Quality-A Mobility Study von Trojman, L, Ragnarsson, L.-A., O'Sullivan, B J, Rosmeulen, M, Kaushik, V S, Groeseneken, G V, Maes, H E, de Gendt, S., Heyns, M

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Accurate Gate Impedance Determination on Ultraleaky MOSFETs by Fitting to a Three-Lumped-Parameter Model atFrequencies From DC to RF von San Andres, E., Pantisano, L., Ramos, J., Roussel, P.J., O'Sullivan, B.J., Toledano-Luque, M., DeGendt, S., Groeseneken, G.

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