Unification of the band anticrossing and cluster-state models of dilute nitride semiconductor alloys von LINDSAY, A, O'REILLY, E. P

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Theory of enhanced bandgap non-parabolicity in GaNxAs1-x and related alloys von LINDSAY, A, O'REILLY, E. P

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Intrinsic limits on electron mobility in dilute nitride semiconductors von Fahy, S., O’Reilly, E. P.

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Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers von Tomic, S., O'Reilly, E.P., Fehse, R., Sweeney, S.J., Adams, A.R., Andreev, A.D., Choulis, S.A., Hosea, T.J.C., Riechert, H.

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Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots von Fry, P W, Itskevich, I E, Mowbray, D J, Skolnick, M S, Finley, J J, Barker, J A, O'Reilly, E P, Wilson, L R, Larkin, I A, Maksym, P A, Hopkinson, M, Al-Khafaji, M, David, J P, Cullis, A G, Hill, G, Clark, J C

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A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers von Fehse, R., Tomic, S., Adams, A.R., Sweeney, S.J., O'Reilly, E.P., Andreev, A., Riechert, H.

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Theoretical analysis of electron-hole alignment in InAs-GaAs quantum dots von Barker, J. A., O’Reilly, E. P.

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Influence of confinement energy and band anticrossing effect on the electron effective mass in Ga1-yInyNxAs1-x quantum wells von TOMIE, Stanko, O'REILLY, Eoin P

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Strain distributions in quantum dots of arbitrary shape von Andreev, A. D., Downes, J. R., Faux, D. A., O’Reilly, E. P.

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Derivation of built-in polarization potentials in nitride-based semiconductor quantum dots von Williams, D. P., Andreev, A. D., O’Reilly, E. P., Faux, D. A.

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Theory of the electronic structure of dilute nitride alloys: beyond the band-anti-crossing model von O’Reilly, E P, Lindsay, A, Fahy, S

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Optical matrix element in InAs ∕ GaAs quantum dots: Dependence on quantum dot parameters von Andreev, A. D., O'Reilly, E. P.

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Influence of nitrogen resonant states on the electronic structure of GaNxAs1-x von LINDSAY, A, O'REILLY, E. P

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Theory of improved spectral purity in index patterned Fabry-Pérot lasers von O'Brien, S., O'Reilly, E. P.

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A tight-binding-based analysis of the band anti-crossing model in GaNxAs1−x von Lindsay, A, O'Reilly, E.P

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Optical transitions and radiative lifetime in GaN/AlN self-organized quantum dots von Andreev, Aleksey D., O’Reilly, Eoin P.

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Electron and hole wave functions in self-assembled quantum rings von Barker, J. A., Warburton, R. J., O’Reilly, E. P.

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On ultrafast optical switching based on quantum-dot semiconductor optical amplifiers in nonlinear interferometers von Uskov, A.V., O'Reilly, E.P., Manning, R.J., Webb, R.P., Cotter, D., Laemmlin, M., Ledentsov, N.N., Bimberg, D.

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On gain saturation in quantum dot semiconductor optical amplifiers von Uskov, A.V., O’Reilly, E.P., Laemmlin, M., Ledentsov, N.N., Bimberg, D.

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Theoretical study of Auger recombination in a GaInNAs 1.3 μm quantum well laser structure von Andreev, A. D., O’Reilly, E. P.

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