Unification of the band anticrossing and cluster-state models of dilute nitride semiconductor alloys von LINDSAY, A, O'REILLY, E. P

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Trends in the electronic structure of dilute nitride alloys von O'Reilly, E P, Lindsay, A, Klar, P J, Polimeni, A, Capizzi, M

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Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots von Fry, P W, Itskevich, I E, Mowbray, D J, Skolnick, M S, Finley, J J, Barker, J A, O'Reilly, E P, Wilson, L R, Larkin, I A, Maksym, P A, Hopkinson, M, Al-Khafaji, M, David, J P, Cullis, A G, Hill, G, Clark, J C

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Electronic structure of semiconductor nanostructures: A modified localization landscape theory von Chaudhuri, D., Kelleher, J. C., O'Brien, M. R., O'Reilly, E. P., Schulz, S.

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Theory of enhanced bandgap non-parabolicity in GaNxAs1-x and related alloys von LINDSAY, A, O'REILLY, E. P

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Derivation of built-in polarization potentials in nitride-based semiconductor quantum dots von Williams, D. P., Andreev, A. D., O’Reilly, E. P., Faux, D. A.

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Strain distributions in quantum dots of arbitrary shape von Andreev, A. D., Downes, J. R., Faux, D. A., O’Reilly, E. P.

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Luminescence properties of dilute bismide systems von Breddermann, B., Bäumner, A., Koch, S.W., Ludewig, P., Stolz, W., Volz, K., Hader, J., Moloney, J.V., Broderick, C.A., O׳Reilly, E.P.

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Structural, electronic, and optical properties of m -plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory von Schulz, S., Tanner, D. P., O'Reilly, E. P., Caro, M. A., Martin, T. L., Bagot, P. A. J., Moody, M. P., Tang, F., Griffiths, J. T., Oehler, F., Kappers, M. J., Oliver, R. A., Humphreys, C. J., Sutherland, D., Davies, M. J., Dawson, P.

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Comparison of stress and total energy methods for calculation of elastic properties of semiconductors von Caro, M A, Schulz, S, O'Reilly, E P

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Hybrid functional study of the elastic and structural properties of wurtzite and zinc-blende group-III nitrides von Caro, M. A., Schulz, S., O’Reilly, E. P.

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Impact of cation-based localized electronic states on the conduction and valence band structure of Al1−xInxN alloys von Schulz, S

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Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states von Uskov, A. V., O’Reilly, E. P., McPeake, D., Ledentsov, N. N., Bimberg, D., Huyet, G.

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Influence of nitrogen resonant states on the electronic structure of GaNxAs1-x von LINDSAY, A, O'REILLY, E. P

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On ultrafast optical switching based on quantum-dot semiconductor optical amplifiers in nonlinear interferometers von Uskov, A.V., O'Reilly, E.P., Manning, R.J., Webb, R.P., Cotter, D., Laemmlin, M., Ledentsov, N.N., Bimberg, D.

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Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k⋅p Hamiltonian von Marquardt, O, O'Reilly, E P, Schulz, S

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Band engineering in dilute nitride and bismide semiconductor lasers von Broderick, C A, Usman, M, Sweeney, S J, O'Reilly, E P

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Intrinsic limits on electron mobility in dilute nitride semiconductors von Fahy, S., O’Reilly, E. P.

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Interconnection between ground state and excited state gain in InAs/GaAs quantum dot semiconductor optical amplifiers von Crowley, M. T., Andreev, A. D., Piwonski, T., Houlihan, J., O'Reilly, E. P., Huyet, G.

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Experimental and modelling study of InGaBiAs InP alloys with up to 5.8% Bi, and with Δso > Eg von Chai, Grace M T, Broderick, C A, O'Reilly, E P, Othaman, Z, Jin, S R, Petropoulos, J P, Zhong, Y, Dongmo, P B, Zide, J M O, Sweeney, S J, Hosea, T J C

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