Dislocations at coalescence boundaries in heteroepitaxial GaN/sapphire studied after the epitaxial layer has completely coalesced von O'Hanlon, T.J., Zhu, T., Massabuau, F.C.-P., Oliver, R.A.

Volltext

Directly correlated microscopy of trench defects in InGaN quantum wells von O'Hanlon, T.J., Massabuau, F C-P., Bao, A., Kappers, M.J., Oliver, R.A.

Volltext

Cross-shaped markers for the preparation of site-specific transmission electron microscopy lamellae using focused ion beam techniques von O'Hanlon, T.J., Bao, A., Massabuau, F.C.-P., Kappers, M.J., Oliver, R.A.

Volltext

DIVERSITY AND DISTRIBUTION OF MUSHROOM-FORMING FUNGI (AGARICOMYCETES) IN IRELAND von O'Hanlon, R., Harrington, T.J.

Volltext