Impact of La–OH bonds on the retention of Co/LaSiO CBRAM von Radhakrishnan, J., Belmonte, A., Nyns, L., Devulder, W., Vereecke, G., Donadio, G. L., Kumbhare, P., Delhougne, R., Houssa, M., Kar, G. S., Goux, L.

Volltext

The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance von Martens, K., Radu, I. P., Mertens, S., Shi, X., Nyns, L., Cosemans, S., Favia, P., Bender, H., Conard, T., Schaekers, M., De Gendt, S., Afanas'ev, V., Kittl, J. A., Heyns, M., Jurczak, M.

Volltext

Direct observation of both contact and remote oxygen scavenging of GeO2 in a metal-oxide-semiconductor stack von Fadida, S., Shekhter, P., Cvetko, D., Floreano, L., Verdini, A., Nyns, L., Van Elshocht, S., Kymissis, I., Eizenberg, M.

Volltext

Chemisorption of ALD precursors in and on porous low-k films von Verdonck, P., Delabie, A., Swerts, J., Farrell, L., Baklanov, M.R., Tielens, H., Van Besien, E., Witters, T., Nyns, L., Van Elshocht, S.

Volltext

ALD and Parasitic Growth Characteristics of the Tetrakisethylmethylamino Hafnium (TEMAH)/H[sub 2]O Process von Nyns, L., Delabie, A., Swerts, J., Van Elshocht, S., De Gendt, S.

Volltext

Band alignment of Hf―Zr oxides on Al2O3/GeO2/Ge stacks von FADIDA, S, EIZENBERG, M, NYNS, L, VAN ELSHOCHT, S, CAYMAX, M

Volltext

Atomic-layer-deposited tantalum silicate as a gate dielectric for III–V MOS devices von Adelmann, C., Lin, D., Nyns, L., Schepers, B., Delabie, A., Van Elshocht, S., Caymax, M.

Volltext

Si cap passivation for Ge nMOS applications von Sioncke, S., Vanherle, W., Art, W., Ceuppens, J., Ivanov, Ts, Lin, D., Nyns, L., Delabie, A., Conard, T., Struyf, H., De Gendt, S., Caymax, M., Collaert, N., Thean, A.

Volltext

Atomic layer deposition of Al2O3 on S-passivated Ge von SIONCKE, S, CEUPPENS, J, LIN, D, NYNS, L, DELABIE, A, STRUYF, H, DE GENDT, S, MÜLLER, M, BECKHOFF, B, CAYMAX, M

Volltext

Nucleation and growth behavior of atomic layer deposited HfO2 films on silicon oxide starting surfaces von Nyns, L, Hall, L, Conard, T, Delabie, A, Deweerd, W, Heyns, M, Van Elshocht, S, Van Hoornick, N, Vinckier, C, De Gendt, S

Volltext

Understanding the potential and limitations of HfAlO as interpoly dielectric in floating-gate Flash memory von Govoreanu, B., Degraeve, R., Zahid, M.B., Nyns, L., Cho, M., Kaczer, B., Jurczak, M., Kittl, J.A., Van Houdt, J.

Volltext

Silicon Orientation Effects in the Atomic Layer Deposition of Hafnium Oxide von Nyns, L., Ragnarsson, L.-Å., Hall, L., Delabie, A., Heyns, M., Van Elshocht, S., Vinckier, C., Zimmerman, P., De Gendt, S.

Volltext

Effect of the switching layer on CBRAM reliability and benchmarking against OxRAM devices von Belmonte, A., Reale, G., Fantini, A., Radhakrishnan, J., Redolfi, A., Devulder, W., Nyns, L., Kundu, S., Delhougne, R., Goux, L., Kar, G.S.

Volltext

Impact of La-OH bonds on the retention of Co/LaSiO CBRAM von Radhakrishnan, J, Belmonte, A, Nyns, L, Devulder, W, Vereecke, G, Donadio, G.L, Kumbhare, P, Delhougne, R, Houssa, M, Kar, G.S, Goux, L

Volltext

Electrical Properties of Low-VT Metal-Gated n-MOSFETs Using La2O3/SiOx as Interfacial Layer Between HfLaO High-κ Dielectrics and Si Channel von CHANG, S. Z, YU, H. Y, KEMER, C, ABSIL, P, HOFFMANN, T. Y, BIESEMANS, S, ADELMANN, C, DELABIE, A, WANG, X. P, VAN ELSHOCHT, S, AKHEYAR, A, NYNS, L, SWERTS, J, AOULAICHE, M

Volltext

Study of the Surface Reactions in ALD Hafnium Aluminates von Nyns, L., Delabie, A., Pourtois, G., Van Elshocht, S., Vinckier, C., De Gendt, S.

Volltext

High-k gadolinium and aluminum scandates for hybrid floating gate NAND flash von Lisoni, Judit G., Breuil, Laurent, Nyns, Laura, Blomme, Pieter, Van den bosch, Geert, Van Houdt, Jan

Volltext

S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursor von Sioncke, S., Lin, H. C., Nyns, L., Brammertz, G., Delabie, A., Conard, T., Franquet, A., Rip, J., Struyf, H., De Gendt, S., Müller, M., Beckhoff, B., Caymax, M.

Volltext

Direct observation of both contact and remote oxygen scavenging of GeO{sub 2} in a metal-oxide-semiconductor stack von Fadida, S., Shekhter, P., Eizenberg, M., Cvetko, D., Department of Physics, Faculty of Mathematics and Physics, University of Ljubljana, Ljubljana, Floreano, L., Verdini, A., Nyns, L., Van Elshocht, S., Kymissis, I.

Volltext

Al2O3/InGaAs Metal-Oxide-Semiconductor Interface Properties: Impact of Gd2O3 and Sc2O3 Interfacial Layers by Atomic Layer Deposition von Ameen, M., Nyns, L., Sioncke, S., Lin, D., Ivanov, Ts, Conard, T., Meersschaut, J., Feteha, M. Y., Van Elshocht, S., Delabie, A.

Volltext