Bilayer Graphene Grown on 4H-SiC (0001) Step-Free Mesas von Nyakiti, L.O, Myers-Ward, R. L, Wheeler, V. D, Imhoff, E. A, Bezares, F.J, Chun, H, Caldwell, J. D, Friedman, A. L, Matis, B. R, Baldwin, J. W, Campbell, P. M, Culbertson, J. C, Eddy, C. R, Jernigan, G. G, Gaskill, D. K

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Graphene FETs for Zero-Bias Linear Resistive FET Mixers von Moon, J. S., Seo, H.-C, Antcliffe, M., Le, D., McGuire, C., Schmitz, A., Nyakiti, L. O., Gaskill, D. K., Campbell, P. M., Lee, K.-M, Asbeck, P.

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Multilayer graphene, Moiré patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC von Xu, P., Qi, D., Schoelz, J.K., Thompson, J., Thibado, P.M., Wheeler, V.D., Nyakiti, L.O., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K., Neek-Amal, M., Peeters, F.M.

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Graphene FET-Based Zero-Bias RF to Millimeter-Wave Detection von Moon, J. S., Seo, H-C, Antcliffe, M., Lin, S., McGuire, C., Le, D., Nyakiti, L. O., Gaskill, D. K., Campbell, P. M., Lee, K-M, Asbeck, P.

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Plasma-based chemical modification of epitaxial graphene with oxygen functionalities von Hernández, S.C., Wheeler, V.D., Osofsky, M.S., Jernigan, G.G., Nagareddy, V.K., Nath, A., Lock, E.H., Nyakiti, L.O., Myers-Ward, R.L., Sridhara, K., Horsfall, A.B., Eddy, C.R., Gaskill, D.K., Walton, S.G.

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Investigation of the Epitaxial Graphene/p-SiC Heterojunction von Anderson, T. J., Hobart, K. D., Nyakiti, L. O., Wheeler, V. D., Myers-Ward, R. L., Caldwell, J. D., Bezares, F. J., Jernigan, G. G., Tadjer, M. J., Imhoff, E. A., Koehler, A. D., Gaskill, D. K., Eddy, C. R., Kub, F. J.

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Enabling graphene-based technologies: Toward wafer-scale production of epitaxial graphene von Nyakiti, L.O., Wheeler, V.D., Garces, N.Y., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K.

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Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface von Xu, P., Ackerman, M.L., Barber, S.D., Schoelz, J.K., Thibado, P.M., Wheeler, V.D., Nyakiti, L.O., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K.

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Transmission electron microscopy study of defects in AlN crystals with rough and smooth surface grains von Nyakiti, L.O., Chaudhuri, J., Gu, Z., Edgar, J.H.

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Membrane amplitude and triaxial stress in twisted bilayer graphene deciphered using first-principles directed elasticity theory and scanning tunneling microscopy von Neek-Amal, M., Xu, P., Qi, D., Thibado, P. M., Nyakiti, L. O., Wheeler, V. D., Myers-Ward, R. L., Eddy, C. R., Gaskill, D. K., Peeters, F. M.

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Spontaneous Conversion of Basal Plane Dislocations in 4° Off-Axis 4H–SiC Epitaxial Layers von Myers-Ward, R. L, Mahadik, N. A, Wheeler, V. D, Nyakiti, L. O, Stahlbush, R. E, Imhoff, E. A, Hobart, K. D, Eddy, C. R, Gaskill, D. K

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Step edge influence on barrier height and contact area in vertical heterojunctions between epitaxial graphene and n-type 4H-SiC von Tadjer, M. J., Anderson, T. J., Myers-Ward, R. L., Wheeler, V. D., Nyakiti, L. O., Robinson, Z., Eddy, C. R., Gaskill, D. K., Koehler, A. D., Hobart, K. D., Kub, F. J.

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Nucleation of in-grown stacking faults and dislocation half-loops in 4H-SiC epitaxy von Abadier, M., Myers-Ward, R. L., Mahadik, N. A., Stahlbush, R. E., Wheeler, V. D., Nyakiti, L. O., Eddy, C. R., Gaskill, D. K., Song, H., Sudarshan, T. S., Picard, Y. N., Skowronski, M.

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High-resolution electron microscopy characterization of nanocrystalline grain boundaries in gold–copper alloys von Nyakiti, L.O., Chaudhuri, J., Jankowski, A.F.

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Vertical conduction mechanism of the epitaxial graphene/n-type 4H-SiC heterojunction at cryogenic temperatures von Tadjer, M. J., Anderson, T. J., Hobart, K. D., Nyakiti, L. O., Wheeler, V. D., Myers-Ward, R. L., Gaskill, D. K., Eddy, C. R., Kub, F. J., Calle, F.

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Detection of polar chemical vapors using epitaxial graphene grown on SiC (0001) von Nagareddy, V. K., Chan, H. K., Hernández, S. C., Wheeler, V. D., Myers-Ward, R. L., Nyakiti, L. O., Eddy, C. R., Walton, S. G., Goss, J. P., Wright, N. G., Gaskill, D. K., Horsfall, A. B.

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Polarity determination of rough and smooth surface grains in AlN crystals von Nyakiti, L. O., Lee, R. G., Gu, Z., Edgar, J. H., Chaudhuri, J.

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Thermal oxidation of single crystal aluminum nitride — A high resolution transmission electron microscopy study von Chaudhuri, J., Lee, R.G., Nyakiti, L.O., Gu, Z., Edgar, J.H., Li, P.

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Managing Basal Plane Dislocations in SiC: Perspective and Prospects von Myers-Ward, Rachael, Gaskill, D. Kurt, Stahlbush, R.S., Mahadik, N.A., Wheeler, Virginia, Nyakiti, Luke O, Eddy, C.R.

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Enabling graphene-based technologies: Toward wafer-scale production of epitaxial graphene: Graphene: Fundamentals and functionalities von NYAKITI, L. O, WHEELER, V. D, GARCES, N. Y, MYERS-WARD, R. L, EDDY, C. R, GASKILL, D. K

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