Low-Temperature Synthesis of α-SiC Nanocrystals von Nussupov, K. Kh, Beisenkhanov, N. B., Bakranova, D. I., Keinbai, S., Turakhun, A. A., Sultan, A. A.

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Synthesis of TiN, Ti, and TiSi2 Thin Films for the Contact System of Solar Cells von Nussupov, K. Kh, Beisenkhanov, N. B., Bakranova, D. I., Keinbay, S., Turakhun, A. A., Sultan, A. A.

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X-ray reflectometry and simulation of the parameters of SiC epitaxial films on Si(111), grown by the atomic substitution method von Kukushkin, S. A., Nussupov, K. Kh, Osipov, A. V., Beisenkhanov, N. B., Bakranova, D. I.

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Influence of the RF magnetron sputtering power on the optical and electrical properties of AZO films von Kh Nussupov, Kair

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Effect of oxygen flow on electrical and optical properties of ITO films synthesized by magnetron sputtering method von Rakhimova, A. Zh, Zhirkov, I. V., Nussupov, K. Kh, Beisenkhanov, N. B., Sultanov, A. T.

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Structure properties of carbon implanted silicon layers von Nussupov, K. Kh, Beisenkhanov, N. B., Valitova, I. V., Mit’, K. A., Mukhamedshina, D. M., Dmitrieva, E. A.

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INFLUENCE OF THE RATIO OF GASE CONSUMPTION N2/Ar AND MAGNETRON POWER ON THE DENSITY AND STOICHIOMETRIC COMPOSITION OF TINX FILMS SYNTHESIZED BY MAGNETRON SPUTTERING METHOD von Keiinbay, S., Nussupov, K. Kh, Sultanov, A. T., Tyschenko, I. E., Eshanov, A. Ph, Beisenkhanov, N. B.

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FORMATION OF CRYSTALLINE SiC IN NEAR-SURFACE SILICON LAYERS BY METHOD OF COORDINATED SUBSTITUTION OF ATOMS von Nussupov, K. Kh, Beisenkhanov, N. B., Kukushkin, S. A., Sultanov, A. T., Keiinbay, S., Shynybayev, D. S., Kusainova, A. Zh

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Synthesis of TiN, Ti, and TiSi.sub.2 Thin Films for the Contact System of Solar Cells von Nussupov, K. Kh, Beisenkhanov, N. B, Bakranova, D. I, Keinbay, S, Turakhun, A. A, Sultan, A. A

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Structure and composition of silicon carbide films synthesized by ion implantation von Nussupov, K. Kh, Beisenkhanov, N. B., Zharikov, S. K., Beisembetov, I. K., Kenzhaliev, B. K., Akhmetov, T. K., Seitov, B. Zh

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The formation of TixNy and TaxNy-based diffusion barriers von Nussupov, K.Kh, Beisenkhanov, N.B., Beisembetov, I.K., Kenzhaliev, B.K., Seitov, B.Zh, Dulatuly, E., Bakranova, D.I.

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Structural properties and parameters of epitaxial silicon carbide films, grown by atomic substitution on the high-resistance (111) oriented silicon von Kukushkin, S.A., Nussupov, K. Kh, Osipov, A.V., Beisenkhanov, N.B., Bakranova, D.I.

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Investigation of the formation of Si and SiC crystalline phases in room temperature C + implanted Si von Nussupov, K.Kh, Sigle, V.O., Bejsenkhanov, N.B.

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On the identification of the vibrational spectra in hydrogen implanted crystalline silicon von Mukashev, B.N., Nussupov, K.H., Tamendarov, M.F., Frolov, V.V.

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Divacancy in silicon irradiated by protons von Mukashev, B. N., Nussupov, K. H., Tamendarov, M. F.

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