Analysis of Drain-Dependent Threshold Voltage and False Turn-On of Schottky-Type p-GaN Gate HEMT in Bridge-Leg Circuit von Fan, Zetao, Wang, Maojun, Wei, Jin, Nuo, Muqin, Zhou, Jin, Zhang, Jiaxin, Hao, Yilong, Shen, Bo

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TCAD Study on Suppression of Substrate-Induced Degradation in GaN-on-Si Integrated Half-Bridge Circuit by Local Si Lateral Etch von Yang, Junjie, Wei, Jin, Wang, Maojun, Wu, Yanlin, Nuo, Muqin, Hao, Yilong, Shen, Bo

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Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type p-GaN Gate HEMT von Nuo, Muqin, Wei, Jin, Wang, Maojun, Yang, Junjie, Wu, Yanlin, Hao, Yilong, Shen, Bo

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Time-Resolved Extraction of Negatively Shifted Threshold Voltage in Schottky-Type p-GaN Gate HEMT Biased at High V DS von Nuo, Muqin, Wu, Yanlin, Yang, Junjie, Hao, Yilong, Wang, Maojun, Wei, Jin

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Time-Resolved Extraction of Negatively Shifted Threshold Voltage in Schottky-Type p-GaN Gate HEMT Biased at High \textit von Nuo, Muqin, Wu, Yanlin, Yang, Junjie, Hao, Yilong, Wang, Maojun, Wei, Jin

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600-V p-GaN Gate HEMT With Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects von Yang, Junjie, Wei, Jin, Wu, Yanlin, Nuo, Muqin, Chen, Zhenghao, Yang, Xuelin, Wang, Maojun, Shen, Bo

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An Actively-Passivated p-GaN Gate HEMT with Screening Effect against Surface Traps von Wu, Yanlin, Wei, Jin, Wang, Maojun, Nuo, Muqin, Yang, Junjie, Lin, Wei, Zheng, Zheyang, Zhang, Li, Hua, Mengyuan, Yang, Xuelin, Hao, Yilong, Chen, Kevin J., Shen, Bo

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Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation p-GaN Gate HEMT via Light/Hole Pumping von Wu, Yanlin, Nuo, Muqin, Yang, Junjie, Lin, Wei, Liu, Xiaosen, Yang, Xuelin, Wang, Jinyan, Hao, Yilong, Shen, Bo, Wang, Maojun, Wei, Jin

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SiC Fin-Channel MOSFET for Enhanced Gate Shielding Effect von Sang, Ling, Jin, Rui, Cui, Jiawei, Niu, Xiping, Li, Zheyang, Yang, Junjie, Nuo, Muqin, Zhang, Meng, Wang, Maojun, Wei, Jin

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Semiconductor device with p-type cap layer von WEI JIN, NUO MUQIN

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Resistance determination circuit and resistance determination system von LAO YUNHONG, WEI JIN, NUO MUQIN

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