Analysis of transverse modes of nitride-based laser diodes von Onomura, M., Saito, S., Sasanuma, K., Hatakoshi, G., Nakasuji, R., Rennie, J., Sugiura, L., Nunoue, S., Nishio, J., Itaya, K.

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Feasibility study of an optical bus utilizing InGaAsP vertical transmission optical amplifiers von Suzuki, N., Ohashi, M., Nunoue, S., Nakamura, M.

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The analysis of contact resistivity between a p-type GaN layer and electrode in InGaN MQW laser diodes von Onomura, Masaaki, Saito, Shinji, Sugiura, Lisa, Nakasuji, Mikio, Sasanuma, Katsunobu, Nishio, Johji, Rennie, John, Nunoue, Shin-ya, Itaya, Kazuhiko

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Mass spectrometric study of the phase boundaries of the CdS-CdTe system von NUNOUE, S, HEMMI, T, KATO, E

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Spontaneous emission enhancement in pillar-type microcavities von TEZUKA, T, NUNOUE, S.-Y, YOSHIDA, H, NODA, T

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Room-Temperature CW Operation of GaN-Based Blue-Violet Laser Diodes Fabricated on Sapphire Substrate Using High-Temperature-Grown Single-Crystal AlN Buffer Layer von Ohba, Yasuo, Iida, Susumu, Nunoue, Sinya

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Dry etching of InGaAsP/InP structures by reactive ion beam etching using chlorine and argon von NISHIBE, T, NUNOUE, S.-Y

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High-efficiency GaN-based laser diodes for solid-state lighting von Saito, S., Hattori, Y., Sugai, M., Harada, Y., Jongil, H., Nunoue, S.

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Thermal Analysis for GaN Laser Diodes von Gen-ichi Hatakoshi, Gen-ichi Hatakoshi, Masaaki Onomura, Masaaki Onomura, Masahiro Yamamoto, Masahiro Yamamoto, Shin-ya Nunoue, Shin-ya Nunoue, Kazuhiko Itaya, Kazuhiko Itaya, Masayuki Ishikawa, Masayuki Ishikawa

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Diameter-dependent optical losses in pillar microcavities von Tezuka, Tsutomu, Nunoue, Shinya

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Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates von Itaya, Kazuhiko, Onomura, Masaaki, Nishio, Johji, Sugiura, Lisa, Saito, Shinji, Suzuki, Mariko, Rennie, John, Nunoue, Shin-ya, Yamamoto, Masahiro, Fujimoto, Hidetoshi, Kokubun, Yoshihiro, Ohba, Yasuo, Gen-ichi Hatakoshi, Gen-ichi Hatakoshi, Masayuki Ishikawa, Masayuki Ishikawa

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Effect of metal type on the contacts to n-type and p-type GaN von Rennie, John, Onomura, Masaaki, Nunoue, Shin-ya, Hatakoshi, Gen-ichi, Sugawara, Hideto, Ishikawa, Masayuki

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Reactive Ion Beam Etching and Overgrowth Process in the Fabrication of InGaN Inner Stripe Laser Diodes von Nunoue, Shin-ya, Yamamoto, Masahiro, Suzuki, Mariko, Nozaki, Chiharu, Nishio, Joji, Sugiura, Lisa, Onomura, Masaaki, Itaya, Kazuhiko, Ishikawa, Masayuki

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Feasibility study of low-power multiquantum-well vertical transmission optical amplifiers for optical interconnection von Suzuki, Nobuo, OHashi, Makoto, Nunoue, Shin-ya, Nakamura, Masaru

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Mass Spectrometric Determination of the Miscibility Gap in the Liquid Fe--Sn System and the Activities of This System at 1550 deg C and 1600 deg C von Nunoue, S, Kato, E

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Mass spectrometric determination of the miscibility gap in the liquid Fe-Sn system and the activities of this system at 1550C and 1600C von NUNOUE, S, KATO, E

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Analysis of transverse modes of nitride-based laser diodes von Onomura, M., Saito, S., Sasanuma, K., Gen-Ichi Hatakoshi, Nakasuji, M., Rennie, J., Sugiura, L., Nunoue, S., Suzuki, M., Nishio, J., Itaya, K.

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Mass Spectrometric Determination of Interaction Parameters for P sub 2 O sub 5 With CaO, MgO, MnO and SiO sub 2 in Fe sub t O--P sub 2 O sub 5 System von Ohara, N, Nunoue, S, Kato, E

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Room temperature pulsed operation of nitride based multi-quantum-well laser diodes with cleaved facets on conventional facets on conventional C-face sapphire substrates von ITAYA, K, ONOMURA, M, KOKUBUN, Y, OHBA, Y, HATAKOSHI, G.-I, ISHIKAWA, M, NISHIO, J, SUGIURA, L, SAITO, S, SUZUKI, M, RENNIE, J, NUNOUE, S.-Y, YAMAMOTO, M, FUJIMOTO, H

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InGaN SCH-MQW Laser Diodes With Ascleaved Facets von Onomura, M., Nishio, J., Saito, S., Nunoue, S., Hatakoshi, G.

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