Electrospun PEO/rGO Scaffolds: The Influence of the Concentration of rGO on Overall Properties and Cytotoxicity von Ivanoska-Dacikj, Aleksandra, Makreski, Petre, Geskovski, Nikola, Karbowniczek, Joanna, Stachewicz, Urszula, Novkovski, Nenad, Tanasić, Jelena, Ristić, Ivan, Bogoeva-Gaceva, Gordana

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Frequency Dependence of C-V Characteristics of MOS Capacitors Containing Nanosized High-κ Ta2O5 Dielectrics von Novkovski, Nenad, Atanassova, Elena

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Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2/Al2O3 Stacks for Use in Charge Trapping Flash Memories von Spassov, Dencho, Skeparovski, Aleksandar, Paskaleva, Albena, Novkovski, Nenad

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New geomagnetic measurements in the Republic of Macedonia von Marjan Delipetrev, Nenad Novkovski, Todor Delipetrov

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Frequency Dependence of C-V Characteristics of MOS Capacitors Containing Nanosized High-[kappa] Ta2O5 Dielectrics von Novkovski, Nenad, Atanassova, Elena

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Physical modeling of electrical and dielectric properties of high-k ta2o5 based MOS capacitors on silicon von Novkovski, Nenad

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Refined analysis of absorption spectra of CdS thin films von Novkovski, Nenad, Tanusevski, Atanas, Gracin, Davor

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Frequency Dependence of C - V Characteristics of MOS Capacitors Containing Nanosized High- κ Ta 2 O 5 Dielectrics von Novkovski, Nenad, Atanassova, Elena

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Peculiarities of the Interface between High-Permittivity Dielectrics and Semiconductors von Novkovski, Nenad

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Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO 2 /Al 2 O 3 Stacks for Use in Charge Trapping Flash Memories von Novkovski, Nenad, Paskaleva, Albena, Skeparovski, Aleksandar, Spassov, Dencho

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Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered Hf[O.sub.2]/[Al.sub.2][O.sub.3] Stacks for Use in Charge Trapping Flash Memories von Novkovski, Nenad, Paskaleva, Albena, Skeparovski, Aleksandar, Spassov, Dencho

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Role of the Ultrathin Silicon Oxide Interfacial Layer in High-k Dielectrics Properties von Novkovski, Nenad

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