Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface von Rudin, S. A., Smagina, Zh. V., Zinovyev, V. A., Novikov, P. L., Nenashev, A. V., Rodyakina, E. E., Dvurechenskii, A. V.

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Nucleation sites of Ge nanoislands grown on pit-patterned Si substrate prepared by electron-beam lithography von Smagina, Zh. V., Zinovyev, V. A., Rudin, S. A., Novikov, P. L., Rodyakina, E. E., Dvurechenskii, A. V.

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Quick search of neighbour particles in molecular dynamics simulations von Novikov, P L, Pavsky, K V, Baranov, A A

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Self-Organization of Ge(Si) Nanoisland Groups on Pit-Patterned Si(100) Substrates von Smagina, Zh. V., Zinoviev, V. A., Rudin, S. A., Rodyakina, E. E., Novikov, P. L., Nenashev, A. V., Dvurechenskii, A. V.

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Specific behaviour of stress relaxation in GexSi1−x films grown on porous silicon based mesa substrates: computer calculations von Novikov, P L, Bolkhovityanov, Yu B, Pchelyakov, O P, Romanov, S I, Sokolov, L V

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Molecular-beam epitaxial growth of Ge/Si nanostructures under low-energy ion irradiation von Smagina, Zh.V., Novikov, P.L., Zinovyev, V.A., Armbrister, V.A., Teys, S.A., Dvurechenskii, A.V.

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Morphology of porous silicon structures formed by anodization of heavily and lightly doped silicon von Aleksandrov, L.N., Novikov, P.L.

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Groups of Ge nanoislands grown outside pits on pit-patterned Si substrates von Rudin, S.A., Zinovyev, V.A., Smagina, Zh.V., Novikov, P.L., Nenashev, A.V., Pavsky, K.V.

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Ge/Si quantum dot nanostructures grown with low-energy ion beam-assisted epitaxy von Dvurechenskii, A.V., Smagina, J.V., Groetzschel, R., Zinovyev, V.A., Armbrister, V.A., Novikov, P.L., Teys, S.A., Gutakovskii, A.K.

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Stress-induced nanoislands nucleation during growth of Ge/Si heterostructures under low-energy ion irradiation von Smagina, J.V., Novikov, P.L., Armbrister, V.A., Zinoviev, V.A., Nenashev, A.V., Dvurechenskii, A.V.

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Nucleation Of Ge 3D-islands On Pit-patterned Si Substrates von Novikov, P. L., Smagina, J. V., Vlasov, D. Yu, Deryabin, A. S., Kozhukhov, A. S., Dvurechenskii, A. V.

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Tuning the configuration of quantum dot molecules grown on stacked multilayers of heteroepitaxial islands von Rudin, S. A., Zinovyev, V. A., Smagina, Zh. V., Novikov, P. L., Shklyaev, A. A., Dvurechenskii, A. V.

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Ge/Si nanostructures with quantum dots grown by ion-beam assisted heteroepitaxy von Smagina, J V, Zinoviev, V A, Novikov, P L, Armbrister, V A, S, Koptev E, Dvurechenskii, A V

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Quantum Dot Size Tuning And Self-Organization With Pulsed Ion Beam Nucleation And Growth Of Ge/Si Nanostructures von Dvurechenskii, A V, Smagina, Z V, Groetzschel, R, Zinovyev, V A, Novikov, P L

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Self-Organization of Ge Substrates von Smagina, Zh. V, Zinoviev, V. A, Rudin, S. A, Rodyakina, E. E, Novikov, P. L, Nenashev, A. V, Dvurechenskii, A. V

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Chains of quantum dot molecules grown on Si surface pre-patterned by ion-assisted nanoimprint lithography von Smagina, Zh. V., Stepina, N. P., Zinovyev, V. A., Novikov, P. L., Kuchinskaya, P. A., Dvurechenskii, A. V.

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Simulating the nucleation and growth of Ge quantum dots on Si using high-efficiency algorithms von Novikov, P. L., Nenashev, A. V., Rudin, S. A., Polyakov, A. S., Dvurechenskii, A. V.

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Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments von Novikov, P. L., Le Donne, A., Cereda, S., Miglio, Leo, Pizzini, S., Binetti, S., Rondanini, M., Cavallotti, C., Chrastina, D., Moiseev, T., von Känel, H., Isella, G., Montalenti, F.

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Formation of germanium nanoislands on pit-patterned silicon substrates by means of the molecular dynamics method von Novikov, P. L., Smagina, Zh. V., Dvurechenskii, A. V.

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Mechanisms of formation and topological analysis of porous silicon — computational modeling von Aleksandrov, L.N., Novikov, P.L.

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