Fabrication and characterization of two-color midwavelength/long wavelength HgCdTe infrared detectors von SMITH, E. P. G, PATTEN, E. A, JOHNSON, S. M, RADFORD, W. A, GOETZ, P. M, VENZOR, G. M, ROTH, J. A, NOSHO, B. Z, BENSON, J. D, STOLTZ, A. J, VARESI, J. B, JENSEN, J. E

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MBE Growth and Transfer of HgCdTe Epitaxial Films from InSb Substrates von de Lyon, T. J., Rajavel, R. D., Nosho, B. Z., Terterian, S., Beliciu, M. L., Patterson, P. R., Chang, D. T., Boag-O’Brien, M. F., Holden, B. T., Jacobs, R. N., Benson, J. D.

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Surface morphology of homoepitaxial GaSb films grown on flat and vicinal substrates von Nosho, B.Z, Bennett, B.R, Aifer, E.H, Goldenberg, M

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Structure of III-Sb(001) growth surfaces: the role of heterodimers von Barvosa-Carter, W, Bracker, AS, Culbertson, JC, Nosho, BZ, Shanabrook, BV, Whitman, LJ, Kim, H, Modine, NA, Kaxiras, E

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Interpreting interfacial structure in cross-sectional STM images of III–V semiconductor heterostructures von Nosho, B.Z., Barvosa-Carter, W., Yang, M.J., Bennett, B.R., Whitman, L.J.

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Spectral crosstalk by radiative recombination in sequential-mode, dual mid-wavelength infrared band hgcdte detectors von COUSSA, R. A, GALLAGHER, A. M, ROTH, J. A, WATERMAN, J. R, KOSAI, K, PHAM, L. T, PIERCE, G. K, SMITH, E. P, VENZOR, G. M, DE LYON, T. J, JENSEN, J. E, NOSHO, B. Z

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Island scaling in strained heteroepitaxy: InAs/GaAs(001) von Bressler-Hill, V, V, Varma, S, Lorke, A, Nosho, BZ, Petroff, PM, Weinberg, WH

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Effects of surface reconstruction on III–V semiconductor interface formation: The role of III/V composition von Nosho, B. Z., Weinberg, W. H., Barvosa-Carter, W., Bennett, B. R., Shanabrook, B. V., Whitman, L. J.

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Electronic versus geometric contrast in cross-sectional STM images of III-V semiconductor heterostructures von Kim, S. G., Erwin, S. C., Nosho, B. Z., Whitman, L. J.

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Effects of strain on island scaling studied by Monte Carlo simulations von Nosho, B.Z., Bressler-Hill, V., Varma, S., Weinberg, W.H.

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Spontaneous growth of an InAs nanowire lattice in an InAs/GaSb superlattice von Nosho, B. Z., Bennett, B. R., Whitman, L. J., Goldenberg, M.

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Lateral composition modulation in InAs/GaSb superlattices von Stokes, D. W., Forrest, R. L., Li, J. H., Moss, S. C., Nosho, B. Z., Bennett, B. R., Whitman, L. J., Goldenberg, M.

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Barrier roughness effects in resonant interband tunnel diodes von Magno, R., Bracker, A. S., Bennett, B. R., Nosho, B. Z., Whitman, L. J.

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Initial stages of Sb2 deposition on InAs(001) von NOSHO, B. Z, SHANABROOK, B. V, BENNETT, B. R, BARVOSA-CARTER, W, WEINBERG, W. H, WHITMAN, L. J

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Thermal conductivity of AlAs0.07Sb0.93 and Al0.9Ga0.1As0.07Sb0.93 alloys and (AlAs)1/(AlSb)11 digital-alloy superlattices von Borca-Tasciuc, T., Song, D. W., Meyer, J. R., Vurgaftman, I., Yang, M.-J., Nosho, B. Z., Whitman, L. J., Lee, H., Martinelli, R. U., Turner, G. W., Manfra, M. J., Chen, G.

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Kinetics of strain relaxation through misfit dislocation formation in InAs/GaAs(111)A heteroepitaxy von Zepeda-Ruiz, Luis A., Nosho, Brett Z., Pelzel, Rodney I., Weinberg, W.Henry, Maroudas, Dimitrios

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Adsorption of [( tBu)GaS] 4 on GaAs(001)-(2×4) von Pelzel, R.I., Nosho, B.Z., Fimland, B.O., Weinberg, W.H.

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Stoichiometry-induced roughness on antimonide growth surfaces von Bracker, A. S., Nosho, B. Z., Barvosa-Carter, W., Whitman, L. J., Bennett, B. R., Shanabrook, B. V., Culbertson, J. C.

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Interface structures of III-V semiconductor heterostructures von Kim, Seong-Gon, Kim, Sungho, Shen, Jun, Nosho, B. Z., Erwin, S. C., Whitman, L. J.

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Spectroscopy and Mechanical Modification of Single Strain-Induced Quantum Dots von Bracker, A.S., Tischler, J.G., Gammon, D., Nosho, B.Z.

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