The two-dimensional lateral injection in-plane laser von North, A., Burroughes, J., Burke, T., Shields, A., Norman, C.E., Pepper, M.

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Lateral n–p junction for acoustoelectric nanocircuits von Hosey, T., Talyanskii, V., Vijendran, S., Jones, G. A. C., Ward, M. B., Unitt, D. C., Norman, C. E., Shields, A. J.

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Temporal isolation of surface-acoustic-wave-driven luminescence from a lateral p–n junction using pulsed techniques von Gell, J.R., Ward, M.B., Atkinson, P., Bremner, S.P., Anderson, D., Norman, C.E., Kataoka, M., Barnes, C.H.W., Jones, G.A.C., Shields, A.J., Ritchie, D.A.

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Cathodoluminescence Determination of Strain-Induced Shifts at Microcracks in GaN/AlGaN Multi Quantum Wells von Norman, C.E., Hoog, R.A., Shields, A.J., Iizuka, N.

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Optical spectroscopic study of electric field sharing effects in piezoelectric GaN/Al0.65Ga0.35N multi-quantum well structures von Hogg, R.A., Norman, C.E., Shields, A.J., Pepper, M., Iizuka, N.

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Optical control of the mobility of a MODFET with a layer of self-assembled quantum dots von Shields, A.J, O'Sullivan, M.P, Farrer, I, Norman, C.E, Ritchie, D.A, Cooper, K, Pepper, M

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Mobility (10 6 cm 2 V −1 s −1) of 2DEGs, 30 nm from ex situ patterned GaAs regrowth interfaces von Burke, T.M, Ritchie, D.A, Linfield, E.H, O'Sullivan, M.P, Burroughes, J.H, Leadbeater, M.L, Holmes, S.N, Norman, C.E, Shields, A.J, Pepper, M

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Dislocations in medium to highly mismatched III–V epitaxial heterostructures von Lazzarini, L., Nasi, L., Norman, C.E., Salviati, G., Bertoni, S.

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Electron microscopy and X-ray diffraction characterization in InP/GaAs grown by atomic layer epitaxy von LAZZARINI, L, FRANZOSI, P, NORMAN, C. E, SALVIATI, G, BERTONE, D

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Characteristics of lateral pn junctions grown on (100) GaAs patterned substrate von Gardner, N.R., Woods, N.J., Dom nguez, P.S., Norman, C.E., Harris, J.J.

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Type II indirect and type I direct recombinations in GaAs/A1As single quantum wells von Holt, D.B., Norman, C.E., Salviati, G., Franchi, S., Bosacchi, A.

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Selective area bandgap modification during MBE growth of InGaAs/GaAs quantum wells for mode locked laser applications von Norman, C.E., Fahy, M.R., Marinopoulou, A., Williams, R.L., Pratt, A.R., Chatenoud, F.

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Detailed modeling of inversion-layer solar cells von Norman, C.E., Thomas, R.E.

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Low cost - high efficiency MIS/inversion layer solar cells von Thomas, R.E., North, R.B., Norman, C.E.

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A comparison of indium migration in the MBE growth of SQW InGaAs-GaAs-AlGaAs lasers on patterned substrates using As/sub 2/ and As/sub 4 von Dion, M., Gupta, V.K., Wasilewski, Z.R., Norman, C.E., Pratt, A.R., Chow-Chong, P., Williams, R.L.

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Ionizing Radiation Effects in Inversion Layer Silicon Solar Cells von Norman, Charles E., Thomas, Raye E.

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Electric field dependence of pulsed THz emission from photoconductive antennas von Baker, C., Norman, C.E., Cluff, J.A., Tribe, W.R., Cole, B.E., Linfield, E.H., Davies, A.G., Arnone, D.D., Pepper, M.

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Single-photon detection using a quantum dot field effect transistor von Shields, A.J., O'Sullivan, M.P., Farrer, J., Hogg, R.A., Ritchie, D.A., Leadbeater, M.L., Cooper, K., Norman, C.E., Pepper, M.

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Selective area bandgap control during MBE growth of InGaAs/InAlAs QWs for optoelectronic device applications von Guptal, V.K., Williams, R.L., Wasilewski, Z.R., Dion, M., Aers, G.C., Norman, C.E.

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Relationship of cliff swallows, ectoparasites, and an alphavirus in west-central Oklahoma von Hopla, C.E. (University of Oklahoma, Norman, OK), Francy, D.B, Calisher, C.H, Lazuick, J.S

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