Oxygen permeation study and improvement of Ba0.5Sr0.5Co0.8Fe0.2Ox perovskite ceramic membranes von QIYING JIANG, NORDHEDEN, Karen J, STAGG-WILLIAMS, Susan M

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Characterization of SiCl4/N2 Plasmas von Agarwal, A S, Berry, V, Alapati, R, Nordheden, K J

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The effect of oxygen on the etch rate of NF3 discharges von NORDHEDEN, K. J, VERDEYEN, J. T

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Mass spectrometric characterization of BCl3/SF6 plasmas von Lee, Y.-S., Sia, J. F., Nordheden, K. J.

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Undergraduate research and intellectual property rights von Nordheden, K.J., Hoeflich, M.H.

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Selective reactive ion etching of GaAs/AlAs in BCl3/SF6 for gate recess von Lee, Y.-S., Upadhyaya, K., Nordheden, K. J., Kao, M.-Y.

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Characterization of SiCl[sub 4]/N[sub 2] Plasmas von Agarwal, A. S., Berry, V., Alapati, R., Nordheden, K. J.

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Triple-crystal x-ray diffraction analysis of reactive ion etched gallium arsenide von Wang, V. S., Matyi, R. J., Nordheden, K. J.

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Predictable reactive ion etching of GaAs and AlGaAs in HCl/Ar RF discharges von NORDHEDEN, K. J, DILL, T. R, VERDEYEN, J. T

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GaAs Etch Rate Enhancement with SF[sub 6] Addition to BCl[sub 3] Plasmas von Nordheden, K. J., Upadhyaya, K., Lee, Y. -S., Gogineni, S. P., Kao, M. -Y.

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GaAs etch rate enhancement with SF6 addition to BCI3plasmas von NORDHEDEN, K. J, UPADHYAYA, K, LEE, Y.-S, GOGINENI, S. P, KAO, M.-Y

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The Effect of Oxygen on the Etch Rate of  NF 3 Discharges von Nordheden, K. J., Verdeyen, J. T.

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Selective reactive ion etching of GaAs/AlAs in BCl 3 / SF 6 for gate recess von Lee, Y.-S., Upadhyaya, K., Nordheden, K. J., Kao, M.-Y.

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Smooth and anisotropic reactive ion etching of GaAs slot via holes for monolithic microwave integrated circuits using Cl2/BCl3/Ar plasmas von Nordheden, K. J., Hua, X. D., Lee, Y. S., Yang, L. W., Streit, D. C., Yen, H. C.

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Smooth and anisotropic reactive ion etching of GaAs slot via holes for monolithic microwave integrated circuits using Cl 2 / BCl 3 / Ar plasmas von Nordheden, K. J., Hua, X. D., Lee, Y. S., Yang, L. W., Streit, D. C., Yen, H. C.

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Model for etch depth dependence on GaAs via hole diameter von Abraham-Shrauner, Barbara, Nordheden, Karen J., Lee, Yao-Sheng

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Very high voltage AlGaAs/InGaAs pseudomorphic power HEMTs von Ming-Yih Kao, Shih-Tsang Fu, Pin Ho, Smith, Chao, Nordheden, Sujane Wang

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Manufacturing technology for high performance HBT linear power amplifiers von Yang, L.W., Komiak, J.J., Smith, D.P., Kao, M.Y., Brozovich, R.S., Nordheden, K.J., Helms, D.R., Houston, D.E., Bardsley, F.R.

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Increasing oxygen flux through a dense oxygen permeable membrane by photolithographic patterning of platinum von Murphy, Sean M., Slade, David A., Nordheden, Karen J., Stagg-Williams, Susan M.

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EEDF analysis of CCP plasmas using regularized reconstruction analysis of IV characteristics from an RF compensated Langmuir probe von ElSaghir, A., Kennedy, C., Shannon, S., Pathak, B., Alexander, J., Nordheden, K.

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