Recent progress of oxide-TFT-based inverter technology von Nomura, Kenji

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Electronic Defects in Amorphous Oxide Semiconductors: A Review von Ide, Keisuke, Nomura, Kenji, Hosono, Hideo, Kamiya, Toshio

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Present status of amorphous In-Ga-Zn-O thin-film transistors von Kamiya, Toshio, Nomura, Kenji, Hosono, Hideo

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Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors von Nomura, Kenji, Kamiya, Toshio, Hirano, Masahiro, Hosono, Hideo

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Threshold switching of non-stoichiometric CuO nanowire for selector application von Huang, Chi-Hsin, Matsuzaki, Kosuke, Nomura, Kenji

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Resistive switching memory effects in p-type hydrogen-treated CuO nanowire von Huang, Chi-Hsin, Tang, Yalun, Matsuzaki, Kosuke, Nomura, Kenji

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Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors von Kamiya, Toshio, Nomura, Kenji, Hosono, Hideo

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Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors von Hanyu, Yuichiro, Domen, Kay, Nomura, Kenji, Hiramatsu, Hidenori, Kumomi, Hideya, Hosono, Hideo, Kamiya, Toshio

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Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects von Nomura, Kenji, Kamiya, Toshio, Hosono, Hideo

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Electronic structure of the amorphous oxide semiconductor a-InGaZnO4-x : Tauc-Lorentz optical model and origins of subgap states von Kamiya, Toshio, Nomura, Kenji, Hosono, Hideo

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Back-Channel Defect Termination by Sulfur for p‑Channel Cu2O Thin-Film Transistors von Chang, Hsuan, Huang, Chi-Hsin, Matsuzaki, Kosuke, Nomura, Kenji

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Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy von Nomura, Kenji, Kamiya, Toshio, Ikenaga, Eiji, Yanagi, Hiroshi, Kobayashi, Keisuke, Hosono, Hideo

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Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors von Hosono, Hideo, Nomura, Kenji, Ohta, Hiromichi, Takagi, Akihiro, Kamiya, Toshio, Hirano, Masahiro

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Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing von Nomura, Kenji, Kamiya, Toshio, Ohta, Hiromichi, Hirano, Masahiro, Hosono, Hideo

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Giant thermoelectric Seebeck coefficient of a two-dimensional electron gas in SrTiO3 von Ohta, Hiromichi, Kim, SungWng, Mune, Yoriko, Mizoguchi, Teruyasu, Nomura, Kenji, Ohta, Shingo, Nomura, Takashi, Nakanishi, Yuki, Ikuhara, Yuichi, Hirano, Masahiro, Hosono, Hideo, Koumoto, Kunihito

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Electronic Structures Above Mobility Edges in Crystalline and Amorphous In-Ga-Zn-O: Percolation Conduction Examined by Analytical Model von Kamiya, T., Nomura, K., Hosono, H.

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p -channel thin-film transistor using p -type oxide semiconductor, SnO von Ogo, Yoichi, Hiramatsu, Hidenori, Nomura, Kenji, Yanagi, Hiroshi, Kamiya, Toshio, Hirano, Masahiro, Hosono, Hideo

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Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors von Ide, Keisuke, Kikuchi, Yutomo, Nomura, Kenji, Kimura, Mutsumi, Kamiya, Toshio, Hosono, Hideo

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Subgap states in transparent amorphous oxide semiconductor, In-Ga-Zn-O, observed by bulk sensitive x-ray photoelectron spectroscopy von Nomura, Kenji, Kamiya, Toshio, Yanagi, Hiroshi, Ikenaga, Eiji, Yang, Ke, Kobayashi, Keisuke, Hirano, Masahiro, Hosono, Hideo

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Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor von Nomura, Kenji, Ohta, Hiromichi, Ueda, Kazushige, Kamiya, Toshio, Hirano, Masahiro, Hosono, Hideo

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