Nonlocal dynamics of secondary electrons in capacitively coupled radio frequency discharges von Noesges, K, Klich, M, Derzsi, A, Horváth, B, Schulze, J, Brinkmann, R P, Mussenbrock, T, Wilczek, S

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Control of electron velocity distributions at the wafer by tailored voltage waveforms in capacitively coupled plasmas to compensate surface charging in high-aspect ratio etch featu... von Hartmann, P., Wang, L., Noesges, K., Berger, B., Wilczek, S., Brinkmann, R. P., Mussenbrock, T., Juhasz, Z., Donko, Z., Derzsi, A., Lee, Eunwoo, Schulze, J.

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Charged particle dynamics and distribution functions in low pressure dual-frequency capacitively coupled plasmas operated at low frequencies and high voltages von Hartmann, P, Wang, L, Nösges, K, Berger, B, Wilczek, S, Brinkmann, R P, Mussenbrock, T, Juhasz, Z, Donkó, Z, Derzsi, A, Lee, Eunwoo, Schulze, J

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A system-wide extracorporeal membrane oxygenation quality collaborative improves patient outcomes von Schwartz, Gary, Huff, Eleanor A., van Zyl, Johanna S., da Graca, Briget, Gonzalez-Stawinski, Gonzalo V., Velazco, Jorge, George, Timothy, Mack, Michael J., Meyer, Dan M., Mallari, Laila, Archibald, Allison, Jamil, Aayla K., Felius, Joost, Zimmerman, Mary Beth, Hernandez, Omar, Noesges, Scott, Martin, Christopher A., Vish, Nancy, Wicke, Julius C., Lione, Alessandro, Sheasby, Jenelle

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Silicon Implantation and Annealing in $\beta$-Ga$_2$O$_3$: Role of Ambient, Temperature, and Time von Gann, K. R, Pieczulewski1, N, Gorsak, C. A, Heinselman, K, Asel, T. J, Noesges, B. A, Smith, K. T, Dryden, D. M, Xing, H. G, Nair, H. P, Muller, D. A, Thompson, M. O

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Chemical Migration and Dipole Formation at van der Waals Interfaces between Magnetic Transition Metal Chalcogenides and Topological Insulators von Noesges, Brenton A, Zhu, Tiancong, Repicky, Jacob J, Yu, Sisheng, Yang, Fenguan, Gupta, Jay A, Kawakami, Roland K, Brillson, Leonard J

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Coherent Growth and Characterization of van der Waals 1T-VSe$_2$ Layers on GaAs(111)B Using Molecular Beam Epitaxy von Zhu, Tiancong, O'Hara, Dante J, Noesges, Brenton A, Zhu, Menglin, Repicky, Jacob J, Brenner, Mark R, Brillson, Leonard J, Hwang, Jinwoo, Gupta, Jay A, Kawakami, Roland K

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Silicon Implantation and Annealing in \(\beta\)-Ga\(_2\)O\(_3\): Role of Ambient, Temperature, and Time von Gann, K R, N Pieczulewski1, Gorsak, C A, Heinselman, K, Asel, T J, Noesges, B A, Smith, K T, Dryden, D M, Xing, H G, Nair, H P, Muller, D A, Thompson, M O

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Strain-Driven Disproportionation at a Correlated Oxide Metal-Insulator Transition von Kim, T H, Paudel, T R, Green, R J, Song, K, H -S Lee, S -Y Choi, Irwin, J, Noesges, B, Brillson, L J, Rzchowski, M S, Sawatzky, G A, Tsymbal, E Y, Eom, C B

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Coherent Growth and Characterization of van der Waals 1T-VSe\(_2\) Layers on GaAs(111)B Using Molecular Beam Epitaxy von Zhu, Tiancong, O'Hara, Dante J, Noesges, Brenton A, Zhu, Menglin, Repicky, Jacob J, Brenner, Mark R, Brillson, Leonard J, Hwang, Jinwoo, Gupta, Jay A, Kawakami, Roland K

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