Progress on and challenges of p-type formation for GaN power devices von Narita, Tetsuo, Yoshida, Hikaru, Tomita, Kazuyoshi, Kataoka, Keita, Sakurai, Hideki, Horita, Masahiro, Bockowski, Michal, Ikarashi, Nobuyuki, Suda, Jun, Kachi, Tetsu, Tokuda, Yutaka

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Observation of domain wall bimerons in chiral magnets von Nagase, Tomoki, So, Yeong-Gi, Yasui, Hayata, Ishida, Takafumi, Yoshida, Hiroyuki K., Tanaka, Yukio, Saitoh, Koh, Ikarashi, Nobuyuki, Kawaguchi, Yuki, Kuwahara, Makoto, Nagao, Masahiro

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Wide range doping control and defect characterization of GaN layers with various Mg concentrations von Tetsuo, Narita, Nobuyuki, Ikarashi, Kazuyoshi, Tomita, Keita, Kataoka, Tetsu, Kachi

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Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis von Iwata, Kenji, Sakurai, Hideki, Arai, Shigeo, Nakashima, Takuya, Narita, Tetsuo, Kataoka, Keita, Bockowski, Michal, Nagao, Masaharu, Suda, Jun, Kachi, Tetsu, Ikarashi, Nobuyuki

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Discovering the incorporation limits for wurtzite AlPyN1−y grown on GaN by metalorganic vapor phase epitaxy von Yang, Xu, Furusawa, Yuta, Kano, Emi, Ikarashi, Nobuyuki, Amano, Hiroshi, Pristovsek, Markus

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Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation von Kano, Emi, Kataoka, Keita, Uzuhashi, Jun, Chokawa, Kenta, Sakurai, Hideki, Uedono, Akira, Narita, Tetsuo, Sierakowski, Kacper, Bockowski, Michal, Otsuki, Ritsuo, Kobayashi, Koki, Itoh, Yuta, Nagao, Masahiro, Ohkubo, Tadakatsu, Hono, Kazuhiro, Suda, Jun, Kachi, Tetsu, Ikarashi, Nobuyuki

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Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing von Kachi, Tetsu, Narita, Tetsuo, Sakurai, Hideki, Matys, Maciej, Kataoka, Keita, Hirukawa, Kazufumi, Sumida, Kensuke, Horita, Masahiro, Ikarashi, Nobuyuki, Sierakowski, Kacper, Bockowski, Michal, Suda, Jun

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Atomic structure of a Ni diffused Si (001) surface layer: Precursor to formation of NiSi2 at low temperature von Ikarashi, Nobuyuki

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Suppression of positive bias instability by inserting polarized AlN interlayer at AlSiO/p-type GaN interface in metal–oxide–semiconductor field-effect transistor von Iguchi, Hiroko, Narita, Tetsuo, Ito, Kenji, Iwasaki, Shiro, Kano, Emi, Ikarashi, Nobuyuki, Tomita, Kazuyoshi, Kikuta, Daigo

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Fabrication of β-Mn type Co–Zn–Mn(001) film on MgO single crystal substrate von Oshima, Daiki, Kato, Takeshi, Ikarashi, Nobuyuki, Nagao, Masahiro

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Demonstrative operation of four-terminal memristive devices fabricated on reduced TiO2 single crystals von Takeuchi, Shotaro, Shimizu, Takuma, Isaka, Tsuyoshi, Tohei, Tetsuya, Ikarashi, Nobuyuki, Sakai, Akira

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Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation von Uedono, Akira, Sakurai, Hideki, Uzuhashi, Jun, Narita, Tetsuo, Sierakowski, Kacper, Ishibashi, Shoji, Chichibu, Shigefusa F., Bockowski, Michal, Suda, Jun, Ohkubo, Tadakatsu, Ikarashi, Nobuyuki, Hono, Kazuhiro, Kachi, Tetsu

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Gate Tuning of Synaptic Functions Based on Oxygen Vacancy Distribution Control in Four-Terminal TiO2−x Memristive Devices von Nagata, Zenya, Shimizu, Takuma, Isaka, Tsuyoshi, Tohei, Tetsuya, Ikarashi, Nobuyuki, Sakai, Akira

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Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing von Sakurai, Hideki, Narita, Tetsuo, Omori, Masato, Yamada, Shinji, Koura, Akihiko, Iwinska, Malgorzata, Kataoka, Keita, Horita, Masahiro, Ikarashi, Nobuyuki, Bockowski, Michal, Suda, Jun, Kachi, Tetsu

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Atomic resolution structural analysis of magnesium segregation at a pyramidal inversion domain in a GaN epitaxial layer von Iwata, Kenji, Narita, Tetsuo, Nagao, Masahiro, Tomita, Kazuyoshi, Kataoka, Keita, Kachi, Tetsu, Ikarashi, Nobuyuki

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Overview of carrier compensation in GaN layers grown by MOVPE: toward the application of vertical power devices von Narita, Tetsuo, Tomita, Kazuyoshi, Kataoka, Keita, Tokuda, Yutaka, Kogiso, Tatsuya, Yoshida, Hikaru, Ikarashi, Nobuyuki, Iwata, Kenji, Nagao, Masahiro, Sawada, Naoki, Horita, Masahiro, Suda, Jun, Kachi, Tetsu

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Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution in Mg Ion‐Implanted GaN von Kano, Emi, Uzuhashi, Jun, Kobayashi, Koki, Ishikawa, Kosuke, Sawabe, Kyosuke, Narita, Tetsuo, Sierakowski, Kacper, Bockowski, Michal, Ohkubo, Tadakatsu, Kachi, Tetsu, Ikarashi, Nobuyuki

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Analysis of Ti valence states in resistive switching regions of a rutile TiO2−x four-terminal memristive device von Yamaguchi, Kengo, Takeuchi, Shotaro, Tohei, Tetsuya, Ikarashi, Nobuyuki, Sakai, Akira

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In-situ electron holography of surface potential response to gate voltage application in a sub-30-nm gate-length metal-oxide-semiconductor field-effect transistor von Ikarashi, Nobuyuki, Takeda, Hiroshi, Yako, Koichi, Hane, Masami

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Enhanced activation of Mg ion-implanted GaN at decreasing annealing temperature by prolonging duration von Nakashima, Takuya, Kano, Emi, Kataoka, Keita, Arai, Shigeo, Sakurai, Hideki, Narita, Tetsuo, Sierakowski, Kacper, Bockowski, Michal, Nagao, Masahiro, Suda, Jun, Kachi, Tetsu, Ikarashi, Nobuyuki

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