Conversions of a stacking fault to threading dislocations in homoepitaxial diamond growth studied by transmission electron microscopy von Tsubouchi, Nobuteru

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Large reduction of threading dislocations in diamond by hot-filament chemical vapor deposition accompanying W incorporations von Ohmagari, Shinya, Yamada, Hideaki, Tsubouchi, Nobuteru, Umezawa, Hitoshi, Chayahara, Akiyoshi, Tanaka, Shingo, Mokuno, Yoshiaki

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Schottky barrier diodes fabricated on diamond mosaic wafers: Dislocation reduction to mitigate the effect of coalescence boundaries von Ohmagari, Shinya, Yamada, Hideaki, Tsubouchi, Nobuteru, Umezawa, Hitoshi, Chayahara, Akiyoshi, Seki, Akinori, Kawaii, Fumiaki, Saitoh, Hiroaki, Mokuno, Yoshiaki

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Characterizations of etch pits formed on single crystal diamond surface using oxygen/hydrogen plasma surface treatment von Tsubouchi, Nobuteru, Mokuno, Y., Shikata, S.

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Configuration of a single grown-in dislocation corresponding to one etch pit formed on the surface of CVD homoepitaxial diamond von Tsubouchi, Nobuteru, Mokuno, Yoshiaki

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Toward High‐Performance Diamond Electronics: Control and Annihilation of Dislocation Propagation by Metal‐Assisted Termination von Ohmagari, Shinya, Yamada, Hideaki, Tsubouchi, Nobuteru, Umezawa, Hitoshi, Chayahara, Akiyoshi, Mokuno, Yoshiaki, Takeuchi, Daisuke

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Microstructures of threading dislocation bundles included in CVD homoepitaxial diamond plates von Tsubouchi, Nobuteru, Mokuno, Yoshiaki

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Evaluation of Local Stress Distributions and Dislocations Around Petal Patterns Observed in CVD Single Crystal Diamond Plates von Tsubouchi, Nobuteru, Nomura, Katsuhiro

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A nitrogen doped low-dislocation density free-standing single crystal diamond plate fabricated by a lift-off process von Mokuno, Yoshiaki, Kato, Yukako, Tsubouchi, Nobuteru, Chayahara, Akiyoshi, Yamada, Hideaki, Shikata, Shinichi

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Microstructures of dome-shaped hillocks formed on B doped CVD homoepitaxial diamond films von Tsubouchi, Nobuteru, Ogura, Masahiko, Makino, Toshiharu

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Uniform growth and repeatable fabrication of inch-sized wafers of a single-crystal diamond von Yamada, Hideaki, Chayahara, Akiyoshi, Mokuno, Yoshiaki, Tsubouchi, Nobuteru, Shikata, Shin-ichi

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Growth and characterization of freestanding p+diamond (100) substrates prepared by hot-filament chemical vapor deposition von Ohmagari, Shinya, Yamada, Hideaki, Umezawa, Hitoshi, Tsubouchi, Nobuteru, Chayahara, Akiyoshi, Mokuno, Yoshiaki

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Evaluation method for grown-in dislocations in CVD single crystal diamond using plasma surface treatment von Tsubouchi, Nobuteru, Shikata, Shin-ichi

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Growth and evaluation of self-standing CVD diamond single crystals on off-axis (001) surface of HP/HT type IIa substrates von Kaneko, Junichi H., Fujita, Fumiyuki, Konno, Yuta, Gotoh, Takuto, Nishi, Norihiko, Watanabe, Hideyuki, Chayahara, Akiyoshi, Umezawa, Hitoshi, Tsubouchi, Nobuteru, Shikata, Shinichi, Isobe, Mitsutaka

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Change of structural and electrical properties of diamond with high-dose ion implantation at elevated temperatures: Dependences on donor/acceptor impurity species von Tsubouchi, Nobuteru, Shikata, S.

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Enhancement of Dopant Activation in B-Implanted Diamond by High-Temperature Annealing von Tsubouchi, Nobuteru, Ogura, Masahiko

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Crystallinity of freestanding large undoped single crystal diamond plates produced using pre-ion-implanted substrates and lift-off processes von Tsubouchi, Nobuteru, Mokuno, Y., Chayahara, A., Shikata, S.

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Large Single Crystal Diamond Plates Produced by Microwave Plasma CVD von Tsubouchi, Nobuteru, Yamada, Hideaki, Chayahara, Akiyoshi, Mokuno, Yoshiaki

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Electrical properties of a B doped layer in diamond formed by hot B implantation and high-temperature annealing von Tsubouchi, Nobuteru, Ogura, M., Mizuochi, N., Watanabe, H.

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Fabrication and fundamental characterizations of tiled clones of single-crystal diamond with 1-inch size von Yamada, Hideaki, Chayahara, Akiyoshi, Umezawa, Hitoshi, Tsubouchi, Nobuteru, Mokuno, Yoshiaki, Shikata, Shinichi

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