Influences of coexisting O2 in H2O-annealing ambient on thermal oxidation kinetics and MOS interface properties on 4H–SiC (1–100) von Chu, Qiao, Noborio, Masato, Shimizu, Sumera, Kita, Koji

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P-Channel MOSFETs on 4H-SiC and Nonbasal Faces Fabricated by Oxide Deposition and \hbox\hbox Annealing von Noborio, M., Suda, J., Kimoto, T.

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Defect Control in Growth and Processing of 4H-SiC for Power Device Applications von Kawahara, Koutarou, Suda, Jun, Feng, Gan, Noborio, Masato, Kimoto, Tsunenobu, Hiyoshi, Toru

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Improved Dielectric and Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing von Suda, Jun, Noborio, Masato, Kawano, H., Kimoto, Tsunenobu, Matsunami, Hiroyuki

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Influence of Effective Fixed Charges on Short-Channel Effects in SiC Metal--Oxide--Semiconductor Field-Effect Transistors von Noborio, Masato, Suda, Jun, Kimoto, Tsunenobu

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Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal--Oxide--Semiconductor Devices von Noborio, Masato, Grieb, Michael, Bauer, Anton J, Peters, Dethard, Friedrichs, Peter, Suda, Jun, Kimoto, Tsunenobu

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Improved Performance of 4H-SiC Double Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors by Increasing RESURF Doses von Noborio, Masato, Suda, Jun, Kimoto, Tsunenobu

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Influences of coexisting O-2 in H2O-annealing ambient on thermal oxidation kinetics and MOS interface properties on 4H-SiC (1-100) von Chu, Qiao, Noborio, Masato, Shimizu, Sumera, Kita, Koji

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4H-SiC Trench MOSFET with Ultra-Low On-Resistance by Using Miniaturization Technology von Ebihara, Yasuhiro, Noborio, Masato, Ichimura, Aiko, Mitani, Shuhei, Mizuno, Shoji, Yamamoto, Toshimasa, Takeuchi, Yuichi, Tsuruta, Kazuhiro

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Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices von Noborio, Masato, Grieb, Michael, Bauer, Anton J., Peters, Dethard, Friedrichs, Peter, Suda, Jun, Kimoto, Tsunenobu

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4H-SiC MISFETs with nitrogen-containing insulators von Noborio, Masato, Suda, Jun, Beljakowa, Svetlana, Krieger, Michael, Kimoto, Tsunenobu

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4H-SiC MISFETs With 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC (11\bar0) von Horita, Masahiro, Noborio, Masato, Kimoto, Tsunenobu, Suda, Jun

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Comparisons of band alignments and current conduction mechanisms between SiO2/4H-SiC (0001) and (1-100) systems with NO-POA von Kil, Taehyeon, Tamura, Atsushi, Noborio, Masato, Shimizu, Sumera, Kita, Koji

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4H-SiC Lateral Double RESURF MOSFETs With Low on Resistance von Noborio, Masato, Suda, Jun, Kimoto, Tsunenobu

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SEMICONDUCTOR DEVICE von NOBORIO, MASATO

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Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistor by High-Temperature Annealing von Yamaji, Kazuki, Noborio, Masato, Suda, Jun, Kimoto, Tsunenobu

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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME von NOBORIO, Masato

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N 2 O -grown oxides/ 4 H -SiC (0001), ( 03 3 ¯ 8 ) , and ( 11 2 ¯ 0 ) interface properties characterized by using p -type gate-controlled diodes von Noborio, Masato, Suda, Jun, Kimoto, Tsunenobu

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N 2 O -grown oxides/4H-SiC (0001), (033¯8), and (112¯) interface properties characterized by using p-type gate-controlled diodes von Noborio, Masato, Suda, Jun, Kimoto, Tsunenobu

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P-Channel MOSFETs on 4H-SiC {0001} and Nonbasal Faces Fabricated by Oxide Deposition and N20 Annealing von NOBORIO, Masato, SUDA, Jun, KIMOTO, Tsunenobu

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