Structural and dielectric studies of Pb(Mg1/3Nb2/3)O3–PbTiO3 ferroelectric solid solutions around the morphotropic boundary von Noblanc, O., Gaucher, P., Calvarin, G.

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Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers von Defives, D., Noblanc, O., Dua, C., Brylinski, C., Barthula, M., Aubry-Fortuna, V., Meyer, F.

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Self-heating effects in silicon carbide MESFETs von Royet, A.S., Ouisse, T., Cabon, B., Noblanc, O., Arnodo, C., Brylinski, C.

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Characterization of ohmic and Schottky contacts on SiC von Kakanakova-Georgieva, A., Marinova, Ts, Noblanc, O., Arnodo, C., Cassette, S., Brylinski, C.

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Power Density Comparison between Microwave Power MESFET's Processed on Conductive and Semi-Insulating Wafer von Arnodo, C., Dua, Christian, Noblanc, Olivier, Chartier, E., Brylinski, Christian

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Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETs von Noblanc, O, Arnodo, C, Dua, C, Chartier, E, Brylinski, C

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High-Performance 15-V Novel LDMOS Transistor Architecture in a 0.25- \mu\hbox BiCMOS Process for RF-Power Applications von Muller, D., Giry, A., Judong, F., Rossato, C., Blanchet, F., Szelag, B., Monroy Aguirre, A., Sommet, R., Pache, D., Noblanc, O.

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Nickel based ohmic contacts on SiC von Marinova, Ts, Kakanakova-Georgieva, A., Krastev, V., Kakanakov, R., Neshev, M., Kassamakova, L., Noblanc, O., Arnodo, C., Cassette, S., Brylinski, C., Pecz, B., Radnoczi, G., Vincze, Gy

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TEM study of Ni and Ni2Si ohmic contacts to SiC von Pécz, B., Radnóczi, G., Cassette, S., Brylinski, C., Arnodo, C., Noblanc, O.

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Electrical characterization of inhomogeneous Ti/4H–SiC Schottky contacts von Defives, D, Noblanc, O, Dua, C, Brylinski, C, Barthula, M, Meyer, F

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Electrical behaviour and microstructural analysis of metal Schottky contacts on 4H-SiC von Defives, D., Durand, O., Wyczisk, F., Noblanc, O., Brylinski, C., Meyer, F.

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Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 μm CMOS bipolar transistors von Benoit, P., Raoult, J., Delseny, C., Pascal, F., Snadny, L., Vildeuil, J.-C., Marin, M., Martinet, B., Cottin, D., Noblanc, O.

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Thermal Annealing Effect on TiN/Ti Layers on 4H-SiC: Metal-Semiconductor Interface Characterization von Wyczisk, F., Olivier, J., Durand, O., Noblanc, Olivier, Defives, D., Brylinski, Christian

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Silicon carbide MESFETs performances and application in broadcast power amplifiers von Temcamani, F., Pouvil, P., Noblanc, O., Brylinski, C., Bannelier, P., Darges, B., Prigent, J.P.

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Hot-Carrier Luminescence in 4H-SiC MESFETs von Noblanc, Olivier, Banc, C., Ouisse, Thierry, Brylinski, Christian, Bano, Edwige

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Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates von Dua, Christian, Dermoul, I., Morvan, Erwan, Chekir, F., Noblanc, Olivier, Sghaier, N., Brylinski, Christian, Maaref, H., Gassoumi, M., Bluet, Jean Marie, Guillot, Gérard

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Microwave power MESFET on 4H-SiC von Noblanc, O., Chartier, E., Arnodo, C., Brylinski, C.

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Interface chemistry of WN/4H–SiC structures von Kakanakova-Georgieva, A, Kassamakova, L, Marinova, Ts, Kakanakov, R, Noblanc, O, Arnodo, C, Cassette, S, Brylinski, C

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Characterization of Power MESFETs on 4h-SiC Conductive and Semi-Insulating Wafers von Noblanc, Olivier, Arnodof, C., Chartier, E., Brylinski, Christian

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Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage von Royet, A.S., Noblanc, Olivier, Banc, C., Ouisse, Thierry, Brylinski, Christian, Bano, Edwige

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