Tunable UV-flash krypton lamp array useful for large area deposition and in situ UV annealing of Si-based dielectrics von Flicstein, J., Vitel, Y., Dulac, O., Debauche, C., Nissim, Y.I., Licoppe, C.

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A triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications von Maher, H., Decobert, J., Falcou, A., Le Pallec, M., Post, G., Nissim, Y.I., Scavennec, A.

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Impurity-induced enhancement of the growth rate of amorphized silicon during solid-phase epitaxy: a free-carrier effect von LICOPPE, C, NISSIM, Y. I

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Effects of Shielding with Various Hydrogen-Argon Mixtures on Supermartensitic Stainless Steel TIG Welds von Eliezer, Dan, Nissim, Y., Kannengießer, Thomas

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RAPID THERMAL CHEMICAL VAPOR-DEPOSITION OF SIOXNY FILMS von LEBLAND, F, LICOPPE, C, GAO, Y, NISSIM, YI, RIGO, S

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STRESS CANCELLATION IN SILICON OXYNITRIDE INP STRUCTURES OBTAINED BY RAPID THERMAL CHEMICAL VAPOR-DEPOSITION von LEBLAND, F, LICOPPE, C, NISSIM, YI

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A combination of rapid thermal processing and photochemical deposition for the growth of SiO2 suitable for InP device applications von LICOPPE, C, WATTINE, F, MERIADEC, C, FLICSTEIN, J, NISSIM, Y. I

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Conservation of photoluminescence splittings related to one-monolayer thickness variations in GaAs/AlGaAs quantum wells after SiO2 capping-induced intermixing von Pépin, A., Vieu, C., Schneider, M., Planel, R., Launois, H., Nissim, Y.

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Photo-assisted deposition of thin films on III–V semiconductors with UV and IR lamps von Nissim, Y.I., Moison, J.M., Houzay, F., Lebland, F., Licoppe, C., Bensoussan, M.

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Temperature distributions produced in semiconductors by a scanning elliptical or circular cw laser beam von Nissim, Y. I., Lietoila, A., Gold, R. B., Gibbons, J. F.

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Recrystallization kinetics pattern in III-V implanted semiconductors von LICOPPE, C, NISSIM, Y. I, MERIADEC, C, HENOC, P

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GaAs/AlGaAs quantum wires fabricated by SiO2 capping-induced intermixing von Pépin, A., Vieu, C., Schneider, M., Planel, R., Bloch, J., Assayag, G. Ben, Launois, H., Marzin, J. Y., Nissim, Y.

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Bulk and surface properties of RTCVD Si3N4 films for optical device applications von LEBLAND, F, WANG, Z. Z, FLICSTEIN, J, LICOPPE, C, NISSIM, Y. I

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SURFACE MECHANISMS IN THE UVCVD OF SIO2-FILMS von LICOPPE, C, MERIADEC, C, NISSIM, YI, MOISON, JM

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Direct measurement of solid-phase epitaxial growth kinetics in GaAs by time-resolved reflectivity von LICOPPE, C, NISSIN, Y. I, MERIADEC, C

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Comparison of crystal orientation dependence for the solid phase epitaxial process in ion implanted Si and GaAs von LICOPPE, C, NISSIM, Y. I, HENOC, P

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OPERATION OF NONLINEAR GAAS/ALGAAS MULTIPLE QUANTUM-WELL MICRORESONATORS FABRICATED USING ALLOY-MIXING TECHNIQUES von SFEZ, BG, RAO, EVK, NISSIM, YI, OUDAR, JL

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Surface reactions of silane with oxidized InP and their application to the improvement of chemical vapor deposition grown, InP-based metal-insulator-semiconductor devices von LICOPPE, C, MOISON, J. M, NISSIM, Y. I, REGOLINI, J. L, BENSAHEL, D

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Light-assisted deposition of silicon-based dielectrics for optical interconnection in optoelectronics von Sayah, Abdeljalil, Nissim, Yves.I.

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Interface structure evolution and impurity effects during solid-phase-epitaxial growth in GaAs von LICOPPE, C, NISSIM, Y. I, MERIADEC, C, KRAUZ, P

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