200 W Output Power at S-Band in AlGaN/GaN Heterojunction Field Effect Transistors with Field Plates on Si Substrates von Nakazawa, Satoshi, Tsurumi, Naohiro, Nishijima, Masaaki, Anda, Yoshiharu, Ishida, Masahiro, Ueda, Tetsuzo, Tanaka, Tsuyoshi

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K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10W von NEGORO, Noboru, KURODA, Masayuki, MURATA, Tomohiro, NISHIJIMA, Masaaki, ANDA, Yoshiharu, SAKAI, Hiroyuki, UEDA, Tetsuzo, TANAKA, Tsuyoshi

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A fully integrated broad-band amplifier MMIC employing a novel chip-size package von Yun, Young, Nishijima, Masaaki, Katsuno, Motonari, Ishida, Hidetoshi, Minagawa, Katsuya, Nobusada, Toshihide, Tanaka, Tsuyoshi

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K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10W von NEGORO, Noboru, KURODA, Masayuki, MURATA, Tomohiro, NISHIJIMA, Masaaki, ANDA, Yoshiharu, SAKAI, Hiroyuki, UEDA, Tetsuzo, TANAKA, Tsuyoshi

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Behavior of excess arsenic in undoped, semi-insulating GaAs during ingot annealing von SUEMITSU, M, TERADA, K, NISHIJIMA, M, MIYAMOTO, N

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200 W Output Power at S-Band in AlGaN/GaN Heterojunction Field Effect Transistors with Field Plates on Si Substrates von Nakazawa, Satoshi, Tsurumi, Naohiro, Nishijima, Masaaki, Anda, Yoshiharu, Ishida, Masahiro, Ueda, Tetsuzo, Tanaka, Tsuyoshi

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A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer von Nishijima, Masaaki, Murata, Tomohiro, Hirose, Yutaka, Hikita, Masahiro, Negoro, Noboru, Sakai, Hiroyuki, Uemoto, Yasuhiro, Inoue, Kaoru, Tanaka, Tsuyoshi, Ueda, Daisuke

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K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W : Heterostructure Microelectronics with TWHM 2011 von NEGORO, Noboru, KURODA, Masayuki, MURATA, Tomohiro, NISHIJIMA, Masaaki, ANDA, Yoshiharu, SAKAI, Hiroyuki, UEDA, Tetsuzo, TANAKA, Tsuyoshi

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Compensation mechanism in undoped, semi-insulating GaAs von SUEMITSU, M, NISHIJIMA, M, MIYAMOTO, N

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Semiconductor device von Nishijima Masaaki

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SEMICONDUCTOR DEVICE von NISHIJIMA MASAAKI

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Carbon concentration dependence of charged point-defect density in semi-insulating GaAs as observed by nuclear magnetic resonance von SUEMITSU, M, NISHIJIMA, M, MIYAMOTO, N

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Mechanism for homogenizing electrical properties of semi-insulating GaAs during ingot annealing von SUEMITSU, M, TERADA, K, NISHIJIMA, M, MIYAMOTO, N

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Semiconductor device having first and second resistance for suppressing loop oscillation von NISHIJIMA MASAAKI

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SEMICONDUCTOR DEVICE von NISHIJIMA MASAAKI

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A 26GHz Short-Range UWB Vehicular-Radar Using 2.5Gcps Spread Spectrum Modulation von Fukuda, T., Negoro, N., Ujita, S., Nagai, S., Nishijima, M., Sakai, H., Tanaka, T., Ueda, D.

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Semiconductor device von NISHIJIMA MASAAKI, TANAKA TSUYOSHI

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High fmax with High Breakdown Voltage in AlGaN/GaN MIS-HFETs using In-Situ SiN as Gate Insulators von Kuroda, M., Murata, T., Nakazawa, S., Takizawa, T., Nishijima, M., Yanagihara, M., Ueda, T., Tanaka, T.

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SEMICONDUCTOR DEVICE von NISHIJIMA MASAAKI

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SEMICONDUCTOR DEVICE von NISHIJIMA MASAAKI

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