The Influence of Surface Pit Shape on 4H-SiC MOSFETs Reliability under High Temperature Bias Tests von Nishiguchi, Taro, Yamamoto, Hirofumi, Furumai, Masaki, Mikamura, Yasuki, Uchida, Kosuke, Hiyoshi, Toru, Matsukawa, Shinji

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Heteroepitaxial growth of (111) 3C–SiC on well-lattice-matched (110) Si substrates by chemical vapor deposition von Nishiguchi, Taro, Nakamura, Mitsuhiro, Nishio, Koji, Isshiki, Toshiyuki, Nishino, Shigehiro

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Nondestructive Analysis of Propagation of Stacking Faults in SiC Bulk Substrate and Epitaxial Layer by Photoluminescence Mapping von Hoshino, Norihiro, Tajima, Michio, Nishiguchi, Taro, Ikeda, Keiichi, Hayashi, Toshihiko, Kinoshita, Hiroyuki, Shiomi, Hiromu

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Thermal Etching of 6H–SiC Substrate Surface von Nishiguchi, Taro, Ohshima, Satoru, Nishino, Shigehiro

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Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate von Isshiki, Toshiyuki, Nishio, Koji, Ohshima, Satoru, Nishino, Shigehiro, Nakamura, Mitsutaka, Nishiguchi, Taro

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Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds von Shiomi, Hiromu, Furusho, Tomoaki, Kobayashi, Ryota, Sasaki, M., Hirai, K., Hayashi, Toshihiko, Kinoshita, Hiroyuki, Nishiguchi, Taro

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Lifetime estimation of SiC MOSFETs under high temperature reverse bias test von Uchida, Kosuke, Hiyoshi, Toru, Nishiguchi, Taro, Yamamoto, Hirofumi, Furumai, Masaki, Tsuno, Takashi, Mikamura, Yasuki

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Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate von Isshiki, Toshiyuki, Nishio, Koji, Ohshima, Satoru, Nishino, Shigehiro, Nakamura, Mitsutaka, Nishiguchi, Taro

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SILICON CARBIDE EPITAXIAL SUBSTRATE, METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE, AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE von NISHIGUCHI, Taro

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Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation von Shiomi, Hiromu, Hoshino, Norihiro, Hayashi, Toshihiko, Kinoshita, Hiroyuki, Tajima, Michio, Nishiguchi, Taro

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Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method von Isshiki, Toshiyuki, Nishio, Koji, Ohshima, Satoru, Nishino, Shigehiro, Nakamura, Mitsutaka, Nishiguchi, Taro

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Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition von Isshiki, Toshiyuki, Ohshima, Satoru, Nishino, Shigehiro, Nakamura, Mitsutaka, Nishio, Koji, Mukai, Yoshihiko, Nishiguchi, Taro

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Reduction of Hollow Defects in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique on (1120) 6H-SiC Substrates von Nishiguchi, Taro, Masuda, Yasuichi, Ohshima, Satoru, Nishino, Shigehiro

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SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE von NISHIGUCHI, Taro

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Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering von Katsuno, Masakazu, Nishino, Shigehiro, Hangyo, M., Kurimoto, Eiji, Ohtani, Noboru, Kisoda, Kenji, Harima, Hiroshi, Nishiguchi, Taro, Nakashima, Shinichi

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SILICON CARBIDE EPITAXIAL SUBSTRATE von MIYASE, Takaya, NISHIGUCHI, Taro

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TEM Observation of the Polytype Transformation of Bulk SiC Ingot von Aoki, Masahiko, Miyazaki, Megumi, Kinoshita, Hiroyuki, Yoshimoto, Masahiro, Nishiguchi, Taro

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Silicon carbide epitaxial substrate von Nishiguchi, Taro, Enokizono, Taro, Hori, Tsutomu

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SILICON CARBIDE EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE von NISHIGUCHI, Taro

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SILICON CARBIDE EPITAXIAL SUBSTRATE von NISHIHARA, Hiroki, MIYASE, Takaya, NISHIGUCHI, Taro

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