Design considerations for three-dimensional betavoltaics von Murphy, John W., Voss, Lars F., Frye, Clint D., Shao, Qinghui, Kazkaz, Kareem, Stoyer, Mark A., Henderson, Roger A., Nikolic, Rebecca J.

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Photogalvanic Etching of n-GaN for Three-Dimensional Electronics von Dryden, Daniel M., Nikolic, Rebecca J., Islam, M. Saif

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Demonstration of a Three-Dimensionally Structured Betavoltaic von Murphy, John W., Frye, Clint D., Henderson, Roger A., Stoyer, Mark A., Voss, Lars F., Nikolic, Rebecca J.

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Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an Electron Beam System von Shao, Qinghui, Jarrell, Joshua T., Murphy, John M., Frye, Clint D., Henderson, Roger A., Stoyer, Mark A., Voss, Lars F., Nikolic, Rebecca J.

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Hall Effect Characterization of α‐Irradiated p‐Type 4H‐SiC von Frye, Clint D., Murphy, John W., Shao, Qinghui, Voss, Lars F., Harrison, Sara E., Edgar, James H., Nikolić, Rebecca J.

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Smooth Bosch Etch for Improved Si Diodes von Voss, Lars F., Qinghui Shao, Conway, Adam M., Reinhardt, Cathy E., Graff, Robert T., Nikolic, Rebecca J.

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Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma von Frye, Clint D, Donald, Scott B, Reinhardt, Catherine E, Nikolic, Rebecca J, Voss, Lars F, Harrison, Sara E

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Ultradeep electron cyclotron resonance plasma etching of GaN von Harrison, Sara E., Voss, Lars F., Torres, Andrea M., Frye, Clint D., Shao, Qinghui, Nikolić, Rebecca J.

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Experimental determination of gamma-ray discrimination in pillar-structured thermal neutron detectors under high gamma-ray flux von Shao, Qinghui, Conway, Adam M., Voss, Lars F., Radev, Radoslav P., Nikolić, Rebecca J., Dar, Mushtaq A., Cheung, Chin L.

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Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an Electron Beam System von Shao, Qinghui, Jarrell, Joshua T., Murphy, John M., Frye, Clint D., Henderson, Roger A., Stoyer, Mark A., Voss, Lars F., Nikolic, Rebecca J.

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Numerical Simulations of Pillar Structured Solid State Thermal Neutron Detector: Efficiency and Gamma Discrimination von Conway, A.M., Wang, T.F., Deo, N., Cheung, C.L., Nikolic, R.J.

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Sintered Cr/Pt and Ni/Au ohmic contacts to B12P2 von Frye, Clint D., Kucheyev, Sergei O., Edgar, James H., Voss, Lars F., Conway, Adam M., Shao, Qinghui, Nikolić, Rebecca J.

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Pillar-structured neutron detector based multiplicity system von Murphy, John W., Shao, Qinghui, Voss, Lars F., Kerr, Phil L., Fabris, Lorenzo, Conway, Adam M., Nikolic, Rebecca J.

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Pillar-structured neutron detector based multiplicity system von Murphy, John W., Shao, Qinghui, Voss, Lars F., Kerr, Phil L., Fabris, Lorenzo, Conway, Adam M., Nikolic, Rebecca J.

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Design considerations for three-dimensional betavoltaics von Murphy, John W., Voss, Lars F., Frye, Clint D., Shao, Qinghui, Kazkaz, Kareem, Stoyer, Mark A., Henderson, Roger A., Nikolic, Rebecca J.

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Fabrication Methodology of Enhanced Stability Room Temperature TlBr Gamma Detectors von Conway, A. M., Voss, L. F., Nelson, A. J., Beck, P. R., Laurence, T. A., Graff, R. T., Nikolic, R. J., Payne, S. A., Hadong Kim, Cirignano, L. J., Shah, Kanai

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Electrical and optical gain lever effects in InGaAs double quantum-well diode lasers von Pocha, M.D., Goddard, L.L., Bond, T.C., Nikolic, R.J., Vernon, S.P., Kallman, J.S., Behymer, E.M.

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Analysis of strain in dielectric coated three dimensional Si micropillar arrays von Voss, Lars F., Reinhardt, Cathy E., Graff, Robert T., Conway, Adam M., Shao, Qinghui, Nikolic, Rebecca J., Dar, Mushtaq A., Cheung, Chin L.

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Current Reduction of CdZnTe via Band Gap Engineering von Voss, L. F., Conway, A. M., Nelson, A. J., Beck, P. R., Graff, R. T., Nikolic, R. J., Payne, S. A., Burger, A., Chen, H.

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Hall Effect Characterization of α ‐Irradiated p‐Type 4H‐SiC von Frye, Clint D., Murphy, John W., Shao, Qinghui, Voss, Lars F., Harrison, Sara E., Edgar, James H., Nikolić, Rebecca J.

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