Hall Effect Characterization of α‐Irradiated p‐Type 4H‐SiC von Frye, Clint D., Murphy, John W., Shao, Qinghui, Voss, Lars F., Harrison, Sara E., Edgar, James H., Nikolić, Rebecca J.

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Ultradeep electron cyclotron resonance plasma etching of GaN von Harrison, Sara E., Voss, Lars F., Torres, Andrea M., Frye, Clint D., Shao, Qinghui, Nikolić, Rebecca J.

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Experimental determination of gamma-ray discrimination in pillar-structured thermal neutron detectors under high gamma-ray flux von Shao, Qinghui, Conway, Adam M., Voss, Lars F., Radev, Radoslav P., Nikolić, Rebecca J., Dar, Mushtaq A., Cheung, Chin L.

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Design considerations for three-dimensional betavoltaics von Murphy, John W., Voss, Lars F., Frye, Clint D., Shao, Qinghui, Kazkaz, Kareem, Stoyer, Mark A., Henderson, Roger A., Nikolic, Rebecca J.

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Sintered Cr/Pt and Ni/Au ohmic contacts to B12P2 von Frye, Clint D., Kucheyev, Sergei O., Edgar, James H., Voss, Lars F., Conway, Adam M., Shao, Qinghui, Nikolić, Rebecca J.

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Numerical Simulations of Pillar Structured Solid State Thermal Neutron Detector: Efficiency and Gamma Discrimination von Conway, A.M., Wang, T.F., Deo, N., Cheung, C.L., Nikolic, R.J.

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Photogalvanic Etching of n-GaN for Three-Dimensional Electronics von Dryden, Daniel M., Nikolic, Rebecca J., Islam, M. Saif

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Demonstration of a Three-Dimensionally Structured Betavoltaic von Murphy, John W., Frye, Clint D., Henderson, Roger A., Stoyer, Mark A., Voss, Lars F., Nikolic, Rebecca J.

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Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an Electron Beam System von Shao, Qinghui, Jarrell, Joshua T., Murphy, John M., Frye, Clint D., Henderson, Roger A., Stoyer, Mark A., Voss, Lars F., Nikolic, Rebecca J.

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Hall Effect Characterization of α ‐Irradiated p‐Type 4H‐SiC von Frye, Clint D., Murphy, John W., Shao, Qinghui, Voss, Lars F., Harrison, Sara E., Edgar, James H., Nikolić, Rebecca J.

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Electrical and optical gain lever effects in InGaAs double quantum-well diode lasers von Pocha, M.D., Goddard, L.L., Bond, T.C., Nikolic, R.J., Vernon, S.P., Kallman, J.S., Behymer, E.M.

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Smooth Bosch Etch for Improved Si Diodes von Voss, Lars F., Qinghui Shao, Conway, Adam M., Reinhardt, Cathy E., Graff, Robert T., Nikolic, Rebecca J.

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Fabrication of Pillar-structured thermal neutron detectors von Nikolic, R.J., Conway, A.M., Reinhardt, C.E., Graff, R.T., Tzu Fang Wang, Deo, N., Chin Li Cheung

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Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma von Frye, Clint D, Donald, Scott B, Reinhardt, Catherine E, Nikolic, Rebecca J, Voss, Lars F, Harrison, Sara E

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Sintered Cr/Pt and Ni/Au ohmic contacts to B{sub 12}P{sub 2} von Frye, Clint D., Kucheyev, Sergei O., Voss, Lars F., Conway, Adam M., Shao, Qinghui, Nikolić, Rebecca J., Edgar, James H.

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Exploration of GaTe for gamma detection von Conway, A.M., Reinhardt, C.E., Nikolic, R.J., Nelson, A.J., Wang, T.F., Wu, K.J., Payne, S.A., Mertiri, A., Pabst, G., Roy, R., Mandal, K.C., Bhattacharya, P., Yunlong Cui, Groza, M., Burger, A.

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Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an Electron Beam System von Shao, Qinghui, Jarrell, Joshua T., Murphy, John M., Frye, Clint D., Henderson, Roger A., Stoyer, Mark A., Voss, Lars F., Nikolic, Rebecca J.

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Pillar-structured neutron detector based multiplicity system von Murphy, John W., Shao, Qinghui, Voss, Lars F., Kerr, Phil L., Fabris, Lorenzo, Conway, Adam M., Nikolic, Rebecca J.

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Pillar-structured neutron detector based multiplicity system von Murphy, John W., Shao, Qinghui, Voss, Lars F., Kerr, Phil L., Fabris, Lorenzo, Conway, Adam M., Nikolic, Rebecca J.

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Design considerations for three-dimensional betavoltaics von Murphy, John W., Voss, Lars F., Frye, Clint D., Shao, Qinghui, Kazkaz, Kareem, Stoyer, Mark A., Henderson, Roger A., Nikolic, Rebecca J.

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