High growth rate MOVPE of Al(Ga)N in planetary reactor von Lundin, W.V., Nikolaev, A.E., Yagovkina, M.A., Brunkov, P.N., Rozhavskaya, M.M., Ber, B.Ya, Kazantsev, D.Yu, Tsatsulnikov, A.F., Lobanova, A.V., Talalaev, R.A.

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Temperature-dependent luminescent properties of dual-wavelength InGaN LEDs von Arteev, D.S., Sakharov, A.V., Nikolaev, A.E., Lundin, W.V., Tsatsulnikov, A.F.

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Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region von Tsatsulnikov, A. F., Lundin, W. V., Zavarin, E. E., Nikolaev, A. E., Sakharov, A. V., Rozhavskaya, M. M., Usov, S. O., Brunkov, P. N., Synitsin, M. A., Davydov, D. V., Mizerov, M. N., Cherkashin, N. A.

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Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes von Tsatsulnikov, A. F., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Usov, S. O., Nikolaev, A. E., Cherkashin, N. A., Ber, B. Ya, Kazantsev, D. Yu, Mizerov, M. N., Park, Hee Seok, Hytch, M., Hue, F.

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The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes von Sizov, V. S., Tsatsulnikov, A. F., Sakharov, A. V., Lundin, W. V., Zavarin, E. E., Cherkashin, N. A., Hÿtch, M. J., Nikolaev, A. E., Mintairov, A. M., He, Yan, Merz, J. L.

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Study of silicon nitride deposition in III-N MOVPE reactors von Lundin, W.V., Rodin, S.N., Zavarin, E.E., Sakharov, A.V., Zakheim, D.A., Nikolaev, A.E., Tsatsulnikov, A.F.

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A simplified cluster model and a tool adapted for collaborative labeling of lung cancer CT scans von Morozov, S.P., Gombolevskiy, V.A., Elizarov, A.B., Gusev, M.A., Novik, V.P., Prokudaylo, S.B., Bardin, A.S., Popov, E.V., Ledikhova, N.V., Chernina, V.Y., Blokhin, I.A., Nikolaev, A.E., Reshetnikov, R.V., Vladzymyrskyy, A.V., Kulberg, N.S.

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The impact of the surface morphology on optical features of the green emitting InGaN/GaN multiple quantum wells von Shmidt, N.M., Chernyakov, A.E., Tal'nishnih, N.A., Nikolaev, A.E., Sakharov, A.V., Petrov, V.N., Gushchina, E.V., Shabunina, E.I.

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Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes von Lundin, W. V., Zavarin, E. E., Sinitsyn, M. A., Sakharov, A. V., Usov, S. O., Nikolaev, A. E., Davydov, D. V., Cherkashin, N. A., Tsatsulnikov, A. F.

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Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes von Barettin, Daniele, Maur, Matthias Auf der, Carlo, Aldo di, Pecchia, Alessandro, Tsatsulnikov, Andrei F, Sakharov, Alexei V, Lundin, Wsevolod V, Nikolaev, Andrei E, Usov, Sergey O, Cherkashin, Nikolay, Hÿtch, Martin J, Karpov, Sergey Yu

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Export and Import Activities of Russian Companies With FDI in the Context of Sanctions von Fedorova, E.A., Nikolaev, A.E., Shirokova, Yu.S., Fedorov, F.Yu

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Fast AlGaN growth in a whole composition range in planetary reactor von Lundin, W.V., Nikolaev, A.E., Rozhavskaya, M.M., Zavarin, E.E., Sakharov, A.V., Troshkov, S.I., Yagovkina, M.A., Tsatsulnikov, A.F.

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Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice von Lundin, W.V., Nikolaev, A.E., Sakharov, A.V., Zavarin, E.E., Valkovskiy, G.A., Yagovkina, M.A., Usov, S.O., Kryzhanovskaya, N.V., Sizov, V.S., Brunkov, P.N., Zakgeim, A.L., Cherniakov, A.E., Cherkashin, N.A., Hytch, M.J., Yakovlev, E.V., Bazarevskiy, D.S., Rozhavskaya, M.M., Tsatsulnikov, A.F.

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Hydrogen effects in III-nitride MOVPE von Yakovlev, E.V., Talalaev, R.A., Segal, A.S., Lobanova, A.V., Lundin, W.V., Zavarin, E.E., Sinitsyn, M.A., Tsatsulnikov, A.F., Nikolaev, A.E.

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Extraction of gold(III) from hydrochloric acid solutions with high-molecular aliphatic alcohols von Petrova, A. M., Nikolaev, A. E., Kasikov, A. G.

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Antibacterial and antifungal activity of acyclic and macrocyclic uracil derivatives with quaternized nitrogen atoms in spacers von Semenov, V.E., Voloshina, A.D., Toroptzova, E.M., Kulik, N.V., Zobov, V.V., Giniyatullin, R.K., Mikhailov, A.S., Nikolaev, A.E., Akamsin, V.D., Reznik, V.S.

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Studies of defects in Mg doped p-GaN films grown by hydride vapor phase epitaxy on SiC substrates von Polyakov, A.Y., Govorkov, A.V., Smirnov, N.B., Nikolaev, A.E., Nikitina, I.P., Dmitriev, V.A.

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Capacitance--voltage characteristics of /[Al.sub.2] [O.sub.3]/n-GaN MIS structures von Ivanov, P.A, Potapov, A.S, Nikolaev, A.E, Lundin, V.V, Sakharov, A.V, Tsatsulnikov, A.F, Afanas'ev, A.V, Romanov, A.A, Osachev, E.V

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Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs von Tsatsulnikov, A. F., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Usov, S. O., Nikolaev, A. E., Yagovkina, M. A., Ustinov, V. M., Cherkashin, N. A.

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58 YEAR-OLD WOMAN WITH A HISTORY OF HYSTERECTOMY AND PELVIC IRRADIATION FOR CERVICAL CANCER PRESENTING WITH PELVIC FRACTURES von Leschinskaya, O.V., Nikolaev, A.E., Kudryashova, N.E., Moiseeva, L.V., Zabavskaya, O.A., Shejko, A.V.

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