Influence of barrier layers on indium segregation in pseudomorphic InGaAs/(Al)GaAs quantum wells grown by MOCVD von Marmalyuk, A A, Govorkov, O I, Petrovsky, A V, Nikitin, D B, Padalitsa, A A, Bulaev, P V, Budkin, I V, Zalevsky, I D

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High-power semiconductor 0.89 — 1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures von Bulaev, P V, Marmalyuk, Aleksandr A, Padalitsa, A A, Nikitin, D B, Petrovskii, A V, Zalevskii, I D, Konyaev, V P, Os'kin, V V, Zverkov, M V, Simakov, V A, Zverev, Georgii M

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Double-pass superluminescent multilayer quantum-well (GaAl)As heterostructure diodes with a reduced power consumption von Mamedov, D S, Marmalyuk, Aleksandr A, Nikitin, D B, Yakubovich, S D, Prokhorov, Vyacheslav V

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Influence of features of QW InGaAs/(Al)GaAs heterostructures grown by MOCVD on the emission spectrum of single-mode laser diodes von Bulaev, P V, Govorkov, O I, Zalevskii, I D, Krigel, V G, Marmalyuk, Aleksandr A, Nikitin, D B, Padalitsa, A A, Petrovskii, A V

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Zinc Doping Profile in AlGaAs/GaAs Heteroepitaxial Structures Grown by Metalorganic Chemical Vapor Deposition von Akchurin, R K, Andreev, A Y, Bulaev, P V, Marmalyuk, A A, Zalevskii, I D, Nikitin, D B, Padalitsa, A A

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Investigation of indium segregation in InGaAs/(Al)GaAs quantum wells grown by MOCVD von Marmalyuk, A.A., Govorkov, O.I., Petrovsky, A.V., Nikitin, D.B., Padalitsa, A.A., Bulaev, P.V., Budkin, I.V., Zalevsky, I.D.

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First mirrors in ITER: material choice and deposition prevention/cleaning techniques von Mukhin, E.E, Semenov, V.V, Razdobarin, A.G, Tolstyakov, S. Yu, Kochergin, M.M, Kurskiev, G.S, Podushnikova, K.A, Masyukevich, S.V, Kirilenko, D.A, Sitnikova, A.A, Chernakov, P.V, Gorodetsky, A.E, Bukhovets, V.L, Zalavutdinov, R. Kh, Zakharov, A.P, Arkhipov, I.I, Khimich, Yu.P, Nikitin, D.B, Gorshkov, V.N, Smirnov, A.S, Chernoizumskaja, T.V, Khilkevitch, E.M, Bulovich, S.V, Voitsenya, V.S, Bondarenko, V.N, Konovalov, V.G, Ryzhkov, I.V, Nekhaieva, O.M, Skorik, O.A, Vukolov, K. Yu, Khripunov, V.I, Andrew, P

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Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures von Bulaev, P.V., Marmalyuk, A.A., Padalitsa, A.A., Nikitin, D.B., Zalevsky, I.D., Kapitonov, V.A., Nikolaev, D.N., Pikhtin, N.A., Lyutetskiy, A.V., Tarasov, I.S.

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Laser diodes (λ=0.98 μm) with a narrow radiation pattern and low internal optical losses von Slipchenko, S. O., Pikhtin, N. A., Fetisova, N. V., Khomylev, M. A., Marmalyuk, A. A., Nikitin, D. B., Padalitsa, A. A., Bulaev, P. V., Zalevskii, I. D., Tarasov, I. S.

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MOCVD-grown InGaAs/GaAs/AlGaAs laser structures with a broad-area contact von Bulaev, P. V., Kapitonov, V. A., Lutetskii, A. V., Marmalyuk, A. A., Nikitin, D. B., Nikolaev, D. N., Padalitsa, A. A., Pikhtin, N. A., Bondarev, A. D., Zalevskii, I. D., Tarasov, I. S.

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808 nm high power laser diodes based on MOCVD grown AlGaAs/GaAs broad waveguide heterostructures von Marmalyuk, A.A., Padalitsa, A.A., Nikitin, D.B., Bulaev, P.V., Sukharev, A.V., Zalevsky, I.D.

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High-power semiconductor 0.89 - 1.06-{mu}m lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures von Bulaev, P V, Marmalyuk, Aleksandr A, Padalitsa, A A, Nikitin, D B, Petrovskii, A V, Zalevskii, I D, Konyaev, V P, Os'kin, V V, Zverkov, M V, Simakov, V A, Zverev, Georgii M

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Double-pass superluminescent multilayer quantum-well (GaAl)As heterostructure diodes with a reduced power consumption von MAMEDOV, D. S, MARMALYUK, A. A, NIKITIN, D. B, PROKHOROV, V. V, YAKUBOVICH, S. D

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Specially accurate ruled length gages and equipment for making them von Nikitin, B. D., Avdulov, A. N., Zalkind, L. I., Nechetskii, B. D., Karpov, V. I.

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Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures von BULAEV, P. V, MARMALYUK, A. A, PADALITSA, A. A, NIKITIN, D. B, ZALEVSKY, I. D, KAPITONOV, V. A, NIKOLAEV, D. N, PIKHTIN, N. A, LYUTETSKIY, A. V, TARASOV, I. S

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Investigation of indium segregation in InGaAs/(Al)GaAs quantum wells grown by MOCVD von MARMALYUK, A. A, GOVORKOV, O. I, PETROVSKY, A. V, NIKITIN, D. B, PADALITSA, A. A, BULAEV, P. V, BUDKIN, I. V, ZALEVSKY, I. D

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Influence of barrier layers on indium segregation in pseudomorphic InGaAs/(Al)GaAs quantum wells grown by MOCVD von MARMALYUK, A. A, GOVORKOV, O. I, PETROVSKY, A. V, NIKITIN, D. B, PADALITSA, A. A, BULAEV, P. V, BUDKIN, I. V, ZALEVSKY, I. D

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Dynamic light scattering biosensing based on analyte-induced inhibition of nanoparticle aggregation von Levin, A. D., Ringaci, A., Alenichev, M. K., Drozhzhennikova, E. B., Shevchenko, K. G., Cherkasov, V. R., Nikitin, M. P., Nikitin, P. I.

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Accumulation of errors in numerical simulations of chemically reacting gas dynamics von Smirnov, N.N., Betelin, V.B., Nikitin, V.F., Stamov, L.I., Altoukhov, D.I.

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Giant optical anisotropy in transition metal dichalcogenides for next-generation photonics von Ermolaev, G. A., Grudinin, D. V., Stebunov, Y. V., Voronin, K. V., Kravets, V. G., Duan, J., Mazitov, A. B., Tselikov, G. I., Bylinkin, A., Yakubovsky, D. I., Novikov, S. M., Baranov, D. G., Nikitin, A. Y., Kruglov, I. A., Shegai, T., Alonso-González, P., Grigorenko, A. N., Arsenin, A. V., Novoselov, K. S., Volkov, V. S.

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