III-Nitride Short Period Superlattices for Deep UV Light Emitters von Nikishin, Sergey

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Structural analysis of N-polar AlN layers grown on Si (111) substrates by high resolution X-ray diffraction von Pandikunta, Mahesh, Ledyaev, Oleg, Kuryatkov, Vladimir, Nikishin, Sergey A.

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Tunable near-infrared Gires-Tournois resonators based on vanadium dioxide on gold film von Jafari, Ahmad Khayyat, Gaddy, Matthew, Ho, Yu-Che, Uzun, Ceren, Kuryatkov, Vladimir, Nikishin, Sergey A, Kim, Myoung-Hwan, Grave de Peralta, Luis, Bernussi, Ayrton A

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Synthesis of New Nitride Alloys with Mg by Plasma‐Assisted Molecular Beam Epitaxy von Gherasoiu, Iulian, Man Yu, Kin, Ekinci, Huseyin, Cui, Bo, Hawkridge, Michael, Kuryatkov, Vladimir, Gaddy, Matthew, Nikishin, Sergey A., Walukiewicz, Wladek

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Density-Dependent Effects on Pulse Compression in GaN Photodetectors Probed by Monte Carlo Studies von Milestone, William J., Nikishin, Sergey A., Joshi, R. P.

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Mechanism of Carrier Transport in Hybrid GaN/AlN/Si Solar Cells von Ekinci, Huseyin, Kuryatkov, Vladimir V., Gherasoiu, Iulian, Karpov, Sergey Y., Nikishin, Sergey A.

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Plasma Etching of n-Type 4H-SiC for Photoconductive Semiconductor Switch Applications von Ekinci, Huseyin, Kuryatkov, Vladimir V., Mauch, Daniel L., Dickens, James C., Nikishin, Sergey A.

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Selective area epitaxy of InGaN quantum well triangular microrings with a single type of sidewall facets von Feng, Wen, Kuryatkov, Vladimir V., Nikishin, Sergey A., Holtz, Mark

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Digital Alloys of AlN/AlGaN for Deep UV Light Emitting Diodes von Nikishin, Sergey A., Holtz, Mark, Temkin, Henryk

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Properties of InGaN/GaN MQW LEDs grown by MOCVD with and without hydrogen carrier gas von Ekinci, Huseyin, Kuryatkov, Vladimir V., Forgey, Chris, Dabiran, Amir, Jorgenson, Robert, Nikishin, Sergey A.

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Correlations between the Growth Modes and Luminescence Properties of AlGaN Quantum Structures von Nikishin, Sergey A., Borisov, Boris A., Kuryatkov, Vladimir V., Holtz, Mark, Garrett, Gregory A., Sarney, Wendy L., Sampath, Anand V., Shen, Hongen, Wraback, Michael

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Properties of InGaN/GaN MQW LEDs grown by MOCVD with and without hydrogen carrier gas von Ekinci, Huseyin, Kuryatkov, Vladimir V., Forgey, Chris, Dabiran, Amir, Jorgenson, Robert, Nikishin, Sergey A.

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Energy of Antisite Defects in Chalcopyrites von Elyukhin, Vyatcheslav A, Nikishin, Sergey A, Temkin, Henryk

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Effect of BCl3 in chlorine-based plasma on etching 4H-SiC for photoconductive semiconductor switch applications von Ekinci, Huseyin, Kuryatkov, Vladimir V., Mauch, Daniel L., Dickens, James C., Nikishin, Sergey A.

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Wet etching silicon nanofins with (111)-oriented sidewalls von Liu, Lianci, Kuryatkov, Vladimir V., Nikishin, Sergey A., Harris, H. Rusty, Holtz, Mark

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Diverse facets of InGaN quantum well microrings grown by selective area epitaxy von Feng, Wen, Kuryatkov, Vladimir V., Rosenbladt, Dana M., Stojanovic, Nenad, Nikishin, Sergey A., Holtz, Mark

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Optical Reflectivity of Asymmetric Dielectric-Metal-Dielectric Planar Structures von Frisbie, S.P., Krishnan, A., Xiaoyan Xu, de Peralta, L.G., Nikishin, S.A., Holtz, M.W., Bernussi, A.A.

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Density-Dependent Effects on Pulse Compression in GaN Photodetectors Probed by Monte Carlo Studies von Milestone, William J. (TTU), Nikishin, Sergey A. (TTU), Joshi, R. P. (TTU)

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Precipitation in Al x Ga 1 - x N y As 1 - y Alloys von Elyukhin, Vyatcheslav A., Sorokina, Lyudmila P., Nikishin, Sergey A.

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Precipitation in AlxGa1-xNyAs1-y alloys von ELYUKHIN, Vyatcheslav A, SOROKINA, Lyudmila P, NIKISHIN, Sergey A

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