Seventy-fold enhancement of light extraction from a defectless photonic crystal made on silicon-on-insulator von Zelsmann, M., Picard, E., Charvolin, T., Hadji, E., Heitzmann, M., Dal’zotto, B., Nier, M. E., Seassal, C., Rojo-Romeo, P., Letartre, X.

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Realization of two-dimensional optical devices using photonic band gap structures on silicon-on-insulator von Charvolin, T., Hadji, E., Picard, E., Zelsman, M., Assous, M., Dalzotto, B., Nier, M.E., Tedesco, S., Letartre, X., Rojo-Roméo, P., Seassal, C.

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Poly-Si gate patterning issues for ultimate MOSFET von Louis, D., Nier, M.E., Fery, C., Heitzmann, M., Papon, A.M., Renard, S.

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Process development for 30 nm poly gate patterning on 1.2 nm oxide von Heitzmann, M., Nier, M.E.

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Fabrication of Single Electron Devices by hybrid (E-beam/DUV) lithography von Palun, L., Tedesco, S., Heitzman, M., Martin, F., Fraboulet, D., Dal'zotto, B., Nier, M.E., Mur, P., Charvolin, T., Mariolle, D., Tardif, F.

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Broadband optical characterization and modeling of photonic crystal waveguides for silicon optical interconnects von Zelsmann, M., Picard, E., Charvolin, T., Hadji, E., Heitzmann, M., Dal’zotto, B., Nier, M. E., Seassal, C., Rojo-Romeo, P., Letartre, X.

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A 0.10 μm buried p-channel MOSFET with through the gate boron implantation and arsenic tilted pocket von Guegan, G., Deleonibus, S., Caillat, C., Tedesco, S., Dal’zotto, B., Heitzmann, M., Nier, M.E., Mur, P.

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A 20 nm physical gate length NMOSFET with a 1.2 nm gate oxide fabricated by mixed dry and wet hard mask etching von Caillat, C., Deleonibus, S., Guegan, G., Heitzmann, M., Nier, M.E., Tedesco, S., Dal'zotto, B., Martin, F., Mur, P., Papon, A.M., Lecarval, G., Previtali, B., Toffoli, A., Allain, F., Biswas, S., Jourdan, F., Fugier, P., Dichiaro, J.L.

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Low Risk of Development of a Regional Recurrence After an Unsuccessful Repeat Sentinel Lymph Node Biopsy in Patients with Ipsilateral Breast Tumor Recurrence von Poodt, Ingrid G. M., Walstra, Coco J. E. F., Vugts, Guusje, Maaskant-Braat, Adriana J. G., Voogd, Adri C., Schipper, Robert-Jan, Nieuwenhuijzen, Grard A. P.

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Transmission spectroscopy of photonic crystals in a silicon-on-insulator waveguide structure von Zelsmann, M., Picard, E., Charvolin, T., Hadji, E., Dal’zotto, B., Nier, M. E., Seassal, C., Rojo-Romeo, P., Letartre, X.

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Prognostic impact of repeat sentinel lymph node biopsy in patients with ipsilateral breast tumour recurrence von Poodt, I. G. M., Vugts, G., Schipper, R. J., Roumen, R. M. H., Rutten, H. J. T., Maaskant‐Braat, A. J. G., Voogd, A. C., Nieuwenhuijzen, G. A. P., Luiten, E. J. T., Rutgers, E. J. T., Vrancken‐Peeters, M. T. F. D., Bessems, M., Klaase, J. M., Muller, S., Francken, A. B., Van Dalen, T., Jansen, L., Koopal, S. A., Vissers, Y. L. J., Smidt, M. L., Merkus, J. W. S., Contant, C. M. E., Veldman, P. H., Linthorst‐Niers, E. M. H., van der Sijp, J. R., Guicherit, O. R., Koppert, L. B., Bosch, A. M., Strobbe, L. J. A., Schlooz‐Vries, M. S., Arntz, I. E., van Essen, J. A., de Waard, J. W. D., Vrouenraets, B. C., van Ooijen, B.

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Risk of Regional Recurrence After Negative Repeat Sentinel Lymph Node Biopsy in Patients with Ipsilateral Breast Tumor Recurrence von Poodt, Ingrid G. M., Vugts, Guusje, Maaskant-Braat, Adriana J. G., Schipper, Robert-Jan, Voogd, Adri C., Nieuwenhuijzen, Grard A. P.

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A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF2 pockets von Deleonibus, S., Caillat, C., Guegan, G., Heitzmann, M., Nier, M.E., Tedesco, S., Dal'zotto, B., Martin, F., Mur, P., Papon, A.M., Lecarval, G., Biswas, S., Souil, D.

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Screening for distant metastases in patients with ipsilateral breast tumor recurrence: the impact of different imaging modalities on distant recurrence-free interval von Poodt, Ingrid G. M., Schipper, Robert-Jan, de Greef, Bianca T. A., Vugts, Guusje, Maaskant-Braat, Adriana J. G., Jansen, Frits H., Wyndaele, Dirk N. J., Voogd, Adri C., Nieuwenhuijzen, Grard A. P.

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Full CMP integration of CVD TiN damascene sub-0.1-μm metal gate devices for ULSI applications von Ducroquet, F., Achard, H., Coudert, F., Previtali, B., Lugand, J.-F., Ulmer, L., Farjot, T., Gobil, Y., Heitzmann, M., Tedesco, S., Nier, M.E., Deleonibus, S.

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A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF sub(2) pockets von Deleonibus, S, Caillat, C, Guegan, G, Heitzmann, M, Nier, ME, Tedesco, S, Dal'zotto, B, Martin, F, Mur, P, Papon, AM, Lecarval, G, Biswas, S, Souil, D

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Coulomb Blockade in Thin SOI Nanodevices von Fraboulet, D., Jehl, X., Mariolle, D., Le Royer, C., Le Carval, G., Scheiblin, P., Rivallin, P., Mollard, L., Deleroyelle, D., Nier, M.E., Toffoli, A., Molas, G., De Salvo, B., Deleonibus, S., Sanquer, M.

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50nm: Gate all around (GAA): Silicon on nothing (SON): Devices: A simple way to co-integration of GAA transistors within bulk MOSFET process von MONFRAY, S, SKOTNICKI, T, HAOND, M, PALLA, R, LE FRIEC, Y, LEVERD, F, NIER, M.-E, VIZIOZ, C, LOUIS, D, MORAND, Y, DESCOMBES, S, CORONEL, P, MAZOYER, P, HARRISON, S, RIBOT, P, TALBOT, A, DUTARTRE, D

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Full CMP integration of CVD TiN damascene sub-0.1-mum metal gate devices for ULSI applications von Ducroquet, F, Achard, H, Coudert, F, Previtali, B, Lugand, J-F, Ulmer, L, Farjot, T, Gobil, Y, Heitzmann, M, Tedesco, S, Nier, M E, Deleonibus, S

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A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF(2) pockets von Deleonibus, S, Caillat, C, Guegan, G, Heitzmann, M, Nier, M E, Tedesco, S, Dal' zotto, B, Martin, F, Mur, P, Papon, A M, Lecarval, G, Biswas, S, Souil, D

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