Bonding states and electrical properties of ultrathin HfOxNy gate dielectrics von Kang, Chang Seok, Cho, Hag-Ju, Onishi, Katsunori, Nieh, Renee, Choi, Rino, Gopalan, Sundar, Krishnan, Sid, Han, Jeong H., Lee, Jack C.

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Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application von Qi, Wen-Jie, Nieh, Renee, Lee, Byoung Hun, Kang, Laegu, Jeon, Yongjoo, Lee, Jack C.

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Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing von Lee, Byoung Hun, Kang, Laegu, Nieh, Renee, Qi, Wen-Jie, Lee, Jack C.

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Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric von Laegu Kang, Byoung Hun Lee, Wen-Jie Qi, Yongjoo Jeon, Nieh, R., Gopalan, S., Onishi, K., Lee, J.C.

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Bias-temperature instabilities of polysilicon gate HfO2 MOSFETs von Onishi, K, Choi, Rino, Kang, Chang Seok, Cho, Hag-Ju, Kim, Young Hee, Nieh, R.E, Han, Jeong, Krishnan, S.A, Akbar, M.S, Lee, J.C

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Nickel silicidation techniques for strained Si1-xGex, Si1-x-yGexCy, and Si1-yCy alloys material-device applications von ZHONGHA SHI, ONSONGO, David, XIAO CHEN, KIM, Dong-Won, NIEH, Renee E, BANERJEE, Sanjay K

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Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing von Onishi, K, Kang, Chang Seok, Choi, Rino, Cho, Hag-Ju, Gopalan, S, Nieh, R.E, Krishnan, S.A, Lee, J.C

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Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application von Qi, Wen-Jie, Nieh, Renee, Dharmarajan, Easwar, Lee, Byoung Hun, Jeon, Yongjoo, Kang, Laegu, Onishi, Katsunori, Lee, Jack C.

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Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing von Nieh, R.E., Chang Seok Kang, Hag-Ju Cho, Onishi, K., Rino Choi, Krishnan, S., Jeong Hee Han, Young-Hee Kim, Akbar, M.S., Lee, J.C.

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Evaluation of silicon surface nitridation effects on ultra-thin ZrO2 gate dielectrics von Nieh, Renee, Choi, Rino, Gopalan, Sundar, Onishi, Katsunori, Kang, Chang Seok, Cho, Hag-Ju, Krishnan, Siddarth, Lee, Jack C.

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Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application von Byoung Hun Lee, Laegu Kang, Wen-Jie Qi, Renee Nieh, Yongjoo Jeon, Katsunori Onishi, Lee, J.C.

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Structural and electrical properties of HfO2 with top nitrogen incorporated layer von Hag-Ju Cho, Chang Seok Kang, Onishi, K., Gopalan, S., Nieh, R., Rino Choi, Krishnan, S., Lee, J.C.

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Voltage- and temperature-dependent gate capacitance and current model: application to ZrO2 n-channel MOS capacitor von Fan, Yang-Yu, Nieh, R.E, Lee, J.C, Lucovsky, G, Brown, G.A, Register, L.F, Banerjee, S.K

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Area dependence of TDDB characteristics for HfO2 gate dielectrics von Young Hee Kim, Onishi, K., Chang Seok Kang, Hag-Ju Cho, Nieh, R., Gopalan, S., Choi, R., Jeong Han, Krishnan, S., Lee, J.C.

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Structural and electrical properties of HfO sub(2) with top nitrogen incorporated layer von Cho, Hag-Ju, Kang, Chang Seok, Onishi, Katsunori, Gopalan, Sundar, Nieh, Renee, Choi, Rino, Krishnan, Siddarth, Lee, Jack C

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Charging effects on reliability of HfO2 devices with polysilicon gate electrode von ONISHI, Katsunori, CHANG SEOK KANG, CHOI, Rino, CHO, Hag-Ju, GOPALAN, Sundar, NIEH, Renee, KRISHNAN, Siddharth, LEE, Jack C

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Effects of high-temperature forming gas anneal on HfO2 mosfet performance von ONISHI, Katsunori, CHANG SEOK KANG, CHOI, Rino, CHO, Hag-Ju, GOPALAN, Sundar, NIEH, Renee, KRISHNAN, Siddharth, LEE, Jack C

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Fabrication of high quality ultra-thin HfO2 gate dielectric MOSFETs using deuterium anneal von CHOI, Rino, ONISHI, Katsunori, LEE, Jack C, CHANG SEOK KANG, GOPALAN, Sundar, NIEH, Renee, KIM, Y. H, HAN, Jeong H, KRISHNAN, Siddarth, CHO, Hag-Ju, SHAHRIAR, Akbar

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Comparison between ultra-thin ZrO2 and ZrOxNy gate dielectrics in TaN or poly-gated NMOSCAP and NMOSFET devices von NIEH, Renee, KRISHNAN, Siddarth, CHO, Hag-Ju, CHANG SEOK KANG, GOPALAN, Sundar, ONISHI, Katsunori, CHOI, Rino, LEE, Jack C

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High quality MOSFETs fabrication with HfO/sub 2/ gate dielectric and tan gate electrode von Rino Choi, Onishi, K., Chang Scok Kang, Renee Nieh, Gopalan, S., Hag-Ju Cho, Krishnan, S., Lee, J.C.

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