Microstructure of RuO2 layer as diffusion barrier between Al and Si substrate von NIEH, C. W, KOLAWA, E, SO, F. C. T, NICOLET, M.-A

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Reactively sputtered indium oxide diffusion barrier von Kolawa, E., Nieh, C.W., Molarius, J.M., Tran, L., Garland, C., Flick, W., Nicolet, M.-A., So, F.C.T., Wei, J.C.S.

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Annealing behaviour of BF 2+ implanted (001) and (111) Si inside miniature size oxide openings von Nieh, C.W., Chen, L.J.

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Maximum thickness of amorphous NiZr interlayers formed by a solid-state reaction technique von MENG, W. J, NIEH, C. W, JOHNSON, W. L

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Lattice distortions in YBa sub 2 Cu sub 3 O sub 7 minus. delta. thin films grown in situ by sequential ion beam sputtering von Kittl, J.A., Johnson, W.L., Nieh, C.W.

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Growth of InAs/Ga1-xInxSb infrared superlattices von CHOW, D. H, MILES, R. H, NIEH, C. W, MCGILL, T. C

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Oxygen tracer diffusion through BaF sub 2 and MgO overcoats on YBa sub 2 Cu sub 3 O sub 7 minus. Delta von Wong, S.B., Vajo, J.J., Hunter, A.T., Nieh, C.W.

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Correlations between deposition parameters and structural and electrical properties of YBa sub 2 Cu sub 3 O sub 7 minus. delta. thin films grown in situ by sequential ion beam sput... von Kittl, J.A., Nieh, C.W., Lee, D.S., Johnson, W.L.

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Microstructure of epitaxial YBa sub 2 Cu sub 3 O sub 7 minus x thin films von Nieh, C.W., Anthony, L., Josefowicz, J.Y., Krajenbrink, F.G.

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Growth of InAs/Ga 1−xIn xSb infrared superlattices von Chow, D.H., Miles, R.H., Nieh, C.W., McGill, T.C.

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Annealing behaviour of BF2+ implanted (001) and (111) Si inside miniature size oxide openings von Nieh, C.W., Chen, L.J.

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Growth of IrSi 3 by molecular beam epitaxy von Lin, T.L., Nieh, C.W., Hashimoto, Shin, Xiao, Q.F.

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Columnar growth of CoSi 2 on Si(111), Si(100) and Si(110) by molecular beam epitaxy von Fathauer, R.W., Nieh, C.W., Xiao, Q.F., Hashimoto, Shin

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In situ grown YBa 2Cu 3O 7−δ thin films by sequential ion beam sputtering von Kittl, J.A., Nieh, C.W., Lee, D.S., Johnson, W.L.

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Ion channeling study of single-crystal columns of CoSi 2 embedded in epitaxial Si on Si(111) grown by MBE von Hashimoto, Shin, Xiao, Q.F., Gibson, W.M., Nieh, C.W., Fathauer, R.W.

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Growth of IrSi3 by molecular beam epitaxy von LIN, T. L, NIEH, C. W, HASHIMOTO, S, XIAO, Q. F

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Partial epitaxial growth of NbSi 2 on Si(111) von Chang, C.S., Nieh, C.W., Chu, J.J., Chen, L.J.

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Fabrication and characterization of high-T/sub c/ superconducting X-band resonators and bandpass filters von Rensch, D.B., Josefowicz, J.Y., Macdonald, P., Nieh, C.W., Hoefer, W., Krajenbrink, F.

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An experimental study of high T/sub c/ superconducting microstrip transmission lines at 35 GHz and the effect of film morphology von Chorey, C.M., Bhasin, K.B., Warner, J.D., Josefowicz, J.Y., Rensch, D.B., Nieh, C.W.

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Microstructure of RuO 2 layer as diffusion barrier between Al and Si substrate von Nieh, C.W., Kolawa, E., So, F.C.T., Nicolet, M.-A.

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