Structure, properties, and dynamics of oxygen vacancies in amorphous SiO2 von Lu, Zhong-Yi, Nicklaw, C J, Fleetwood, D M, Schrimpf, R D, Pantelides, S T

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Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices von Fleetwood, D.M., Xiong, H.D., Lu, Z.-Y., Nicklaw, C.J., Felix, J.A., Schrimpf, R.D., Pantelides, S.T.

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The structure, properties, and dynamics of oxygen vacancies in amorphous SiO2 von Nicklaw, C.J, Lu, Z.-Y, Fleetwood, D.M, Schrimpf, R.D, Pantelides, S.T

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Defects and nanocrystals generated by Si implantation into a-SiO2 von Nicklaw, C J, Pagey, M P, Pantelides, S T, Fleetwood, D M, Schrimpf, R D, Galloway, K F, Wittig, J E, Howard, B M, Taw, E, McNeil, W H

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TCAD-assisted analysis of back-channel leakage in irradiated mesa SOI nMOSFETs von Milanowski, R.J., Pagey, M.P., Massengill, L.W., Schrimpf, R.D., Wood, M.E., Offord, B.W., Graves, R.J., Galloway, K.F., Nicklaw, C.J., Kelley, E.P.

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A hydrogen-transport-based interface-trap-generation model for hot-carrier reliability prediction von Pagey, M.P., Schrimpf, R.D., Galloway, K.F., Nicklaw, C.J., Ikeda, S., Kamohara, S.

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Erratum: Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous S i O 2 [Phys. Rev. Lett.PRLTAO0031-9007 89 , 285505 (2002)] von Lu, Zhong-Yi, Nicklaw, C. J., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T.

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Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous S i O 2 von Lu, Zhong-Yi, Nicklaw, C. J., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T.

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The structure, properties, and dynamics of oxygen vacancies in amorphous SiO(2) von Nicklaw, C J, Lu, Z-Y, Fleetwood, D M, Schrimpf, R D, Pantelides, S T

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The structure, properties, and dynamics of oxygen vacancies in amorphous SiO sub(2) von Nicklaw, C J, Lu, Z-Y, Fleetwood, D M, Schrimpf, R D, Pantelides, ST

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Defects and nanocrystals generated by Si implantation into a-SiO (2) von Nicklaw, C J, Pagey, M P, Pantelides, S T, Fleetwood, D M, Schrimpf, R D, Galloway, K F, Wittig, J E, Howard, B M, Taw, E, McNeil, W H, Conley, J F

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Defects and nanocrystals generated by Si implantation into a-SiO sub(2) von Nicklaw, C J, Pagey, M P, Pantelides, ST, Fleetwood, D M, Schrimpf, R D, Galloway, K F, Wittig, JE, Howard, B M, Taw, E, McNeil, W H, Conley, JF Jr

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Dipoles in SiO2: Border traps or not? von FLEETWOOD, D. M, RASHKEEV, S. N, LU, Z. Y, NICKLAW, C. J, FELIX, J. A, SCHRIMPF, R. D, PAUTELIDES, S. T

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