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  1. 1
    Influence of a Two-Dimensional Growth Mode on Electrical Properties of the GaN Buffer in an AlGaN/GaN High Electron Mobility Transistor

    Influence of a Two-Dimensional Growth Mode on Electrical Properties of the GaN Buffer in an AlGaN/GaN High Electron Mobility Transistor von Esendag, Volkan, Feng, Peng, Zhu, Chenqi, Ni, Rongzi, Bai, Jie, Wang, Tao

    Veröffentlicht in Materials

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  2. 2
    Facade is adjustable, and mounting structure is hung futilely to removable veneer circuit board

    Facade is adjustable, and mounting structure is hung futilely to removable veneer circuit board von HOU JIE, LI FENG, NI JING, MEI WENBIN, FENG LINNA, CAO MINGGUANG, YAO WENJING, JI JING, CHENG ZHONGXIAN, CAO MINGMING, REN YAJUN, DENG YANHUA, CHEN PANYUN, YANG RONGZI

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  3. 3
    Facing integrated board dry hanging installation structure with adjustable and dismountable facade

    Facing integrated board dry hanging installation structure with adjustable and dismountable facade von HOU JIE, LI FENG, NI JING, MEI WENBIN, FENG LINNA, CAO MINGGUANG, YAO WENJING, JI JING, CHENG ZHONGXIAN, CAO MINGMING, REN YAJUN, DENG YANHUA, CHEN PANYUN, YANG RONGZI

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