Fabrication of a Class of Nanostructured Materials Using Carbon Nanowalls as the Templates von Wu, Y.H., Yang, B.J., Han, G.C., Zong, B.Y., Ni, H.Q., Luo, P., Chong, T.C., Low, T.S., Shen, Z.X.

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The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy von Huang, X., Zhang, X.H., Zhu, Y.G., Li, T., Han, L.F., Shang, X.J., Ni, H.Q., Niu, Z.C.

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Detection of large in-plane spin-dephasing anisotropy in [1 0 0]-grown GaAs/AlGaAs quantum wells von Han, L.F., Zhang, X.H., Ni, H.Q., Niu, Z.C.

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Temperature dependence of hole spin relaxation in ultrathin InAs monolayers von Li, T., Zhang, X.H., Zhu, Y.G., Huang, X., Han, L.F., Shang, X.J., Ni, H.Q., Niu, Z.C.

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Characteristic of rapid thermal annealing on GaIn(N)(Sb)As∕GaAs quantum well grown by molecular-beam epitaxy von Zhao, H., Xu, Y. Q., Ni, H. Q., Zhang, S. Y., Wu, D. H., Han, Q., Wu, R. H., Niu, Z. C.

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Effect of electron–hole spatial correlation on spin relaxation dynamics in InAs submonolayer von Sun, Zheng, Xu, Z.Y., Ruan, X.Z., Ji, Yang, Sun, B.Q., Wang, M., Ni, H.Q.

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Room temperature 1.25 μm emission from high indium content In x Ga 1− x As/GaAs quantum wells grown by molecular beam epitaxy von Niu, Z.C., Ni, H.Q., Xu, X.H., Xu, Y.Q., He, Z.H., Han, Q., Wu, R.H.

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Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3– 1.55 μ m grown by molecular beam epitaxy von Ni, H.Q., Niu, Z.C., Fang, Z.D., Huang, S.S., Zhang, S.Y., Wu, D.H., Shun, Z., Han, Q., Wu, R.H.

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1.55 {mu}m GaInNAs resonant-cavity-enhanced photodetector grown on GaAs von Han, Q., Yang, X.H., Niu, Z.C., Ni, H.Q., Xu, Y.Q., Zhang, S.Y., Du, Y., Peng, L.H., Zhao, H., Tong, C.Z., Wu, R.H., Wang, Q.M.

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Application of rapid thermal annealing on 1.3–1.55 μm GaInNAs(Sb) lasers grown by molecular beam epitaxy von Zhao, H., Xu, Y.Q., Ni, H.Q., Zhang, S.Y., Han, Q., Du, Y., Yang, X.H., Wu, R.H., Niu, Z.C.

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Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature von Sun, Z., Yang, X.D., Sun, B.Q., Ji, Y., Zhang, S.Y., Ni, H.Q., Niu, Z.C., Xu, Z.Y.

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Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3– grown by molecular beam epitaxy von Ni, H.Q., Niu, Z.C., Fang, Z.D., Huang, S.S., Zhang, S.Y., Wu, D.H., Shun, Z., Han, Q., Wu, R.H.

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GaAs-based room-temperature continuous-wave 1.59 {mu}m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy von Niu, Z.C., Zhang, S.Y., Ni, H.Q., Wu, D.H., Zhao, H., Peng, H.L., Xu, Y.Q., Li, S.Y., He, Z.H., Ren, Z.W., Han, Q., Yang, X.H., Du, Y., Wu, R.H., State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

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Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 μm (In yGa 1− y As/GaAs 1− x Sb x )/GaAs bilayer quantum wells von Niu, Z.C., Xu, X.H., Ni, H.Q., Xu, Y.Q., He, Z.H., Han, Q., Wu, R.H.

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Room temperature 1.25 μm emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy von NIU, Z. C, NI, H. Q, XU, X. H, XU, Y. Q, HE, Z. H, HAN, Q, WU, R. H

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Molecular beam epitaxy growth of A 1.58 μm InGaAs quantum well laser on GaAs von Tangring, I., Wang, S.M., Larsson, A., Ni, H.Q., Wu, B.P., Wu, D.H., Xiong, Y.H., Huang, S.S., Niu, Z.C.

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The effect of dislocation density on the interactions between dislocations and twin boundaries in nanocrystalline materials von Ni, S., Wang, Y.B., Liao, X.Z., Figueiredo, R.B., Li, H.Q., Ringer, S.P., Langdon, T.G., Zhu, Y.T.

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Results from an improved flowing liquid lithium limiter with increased flow uniformity in high power plasmas in EAST von Zuo, G.Z., Hu, J.S., Maingi, R., Sun, Z., Yang, Q.X., Huang, M., Meng, X.C., Xu, W., Qian, Y.Z., Li, C.L., Bi, H.L., Chen, Y., Yuan, X.L., Han, X.F., Zhu, X., Wang, Y.F., Zhang, L., Liu, H.Q., Wang, L., Gong, X.Z., Tritz, K., Diallo, A., Lunsford, R., Ni, M.J., Li, J.G.

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Grain growth and dislocation density evolution in a nanocrystalline Ni–Fe alloy induced by high-pressure torsion von Ni, S., Wang, Y.B., Liao, X.Z., Alhajeri, S.N., Li, H.Q., Zhao, Y.H., Lavernia, E.J., Ringer, S.P., Langdon, T.G., Zhu, Y.T.

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Strain hardening and softening in a nanocrystalline Ni–Fe alloy induced by severe plastic deformation von Ni, S., Wang, Y.B., Liao, X.Z., Alhajeri, S.N., Li, H.Q., Zhao, Y.H., Lavernia, E.J., Ringer, S.P., Langdon, T.G., Zhu, Y.T.

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