Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells von Shang, X.-J., He, J.-F., Li, M.-F., Zhan, F., Ni, H.-Q., Niu, Z.-C., Pettersson, H., Fu, Y.

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The effects of thermal annealing on ZnO thin films grown by pulsed laser deposition von Lu, Y. F., Ni, H. Q., Mai, Z. H., Ren, Z. M.

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High density and uniformity 1300 nm InAs/GaAs quantum dots grown on silicon substrate through molecular beam epitaxy von Hao, H M, Su, X B, Liu, H Q, Shang, X J, Ni, H Q, Niu, Z C

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Coherent versus incoherent light scattering from a quantum dot von Konthasinghe, K., Walker, J., Peiris, M., Shih, C. K., Yu, Y., Li, M. F., He, J. F., Wang, L. J., Ni, H. Q., Niu, Z. C., Muller, A.

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The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy von Huang, X., Zhang, X.H., Zhu, Y.G., Li, T., Han, L.F., Shang, X.J., Ni, H.Q., Niu, Z.C.

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Photoluminescence enhancement of the single InAs quantum dots through plasmonic Au island films von Wang, H. Y., Dou, X. M., Yang, Sh, Su, D., Jiang, D. S., Ni, H. Q., Niu, Z. C., Sun, B. Q.

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In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots von Wu, X. F., Wei, H., Dou, X. M., Ding, K., Yu, Y., Ni, H. Q., Niu, Z. C., Ji, Y., Li, S. S., Jiang, D. S., Guo, G.-C., He, L. X., Sun, B. Q.

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Coupling and single-photon purity of a quantum dot-cavity system studied using hydrostatic pressure von Zhou, P. Y., Wu, X. F., Ding, K., Dou, X. M., Zha, G. W., Ni, H. Q., Niu, Z. C., Zhu, H. J., Jiang, D. S., Zhao, C. L., Sun, B. Q.

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Field-field and photon-photon correlations of light scattered by two remote two-level InAs quantum dots on the same substrate von Konthasinghe, K, Peiris, M, Yu, Y, Li, M F, He, J F, Wang, L J, Ni, H Q, Niu, Z C, Shih, C K, Muller, A

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Single-photon property characterization of 1.3 μm emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes von Zhou, P. Y., Dou, X. M., Wu, X. F., Ding, K., Li, M. F., Ni, H. Q., Niu, Z. C., Jiang, D. S., Sun, B. Q.

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GaAs-based room-temperature continuous-wave 1.59 μ m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy von Niu, Z. C., Zhang, S. Y., Ni, H. Q., Wu, D. H., Zhao, H., Peng, H. L., Xu, Y. Q., Li, S. Y., He, Z. H., Ren, Z. W., Han, Q., Yang, X. H., Du, Y., Wu, R. H.

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Temperature dependence of electron-spin relaxation in a single InAs quantum dot at zero applied magnetic field von Dou, X. M., Sun, B. Q., Jiang, D. S., Ni, H. Q., Niu, Z. C.

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Quasiparticle band structures of wurtzite and rock-salt ZnO von Ni, H. Q., Lu, Y. F., Ren, Z. M.

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The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots von Huang, X, Zhang, X H, Zhu, Y G, Li, T, Han, L F, Shang, X J, Ni, H Q, Niu, Z C

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Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs∕GaAs quantum wells von Sun, Z., Xu, Z. Y., Yang, X. D., Sun, B. Q., Ji, Y., Zhang, S. Y., Ni, H. Q., Niu, Z. C.

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Single-photon-emitting diode at liquid nitrogen temperature von Dou, X. M., Chang, X. Y., Sun, B. Q., Xiong, Y. H., Niu, Z. C., Huang, S. S., Ni, H. Q., Du, Y., Xia, J. B.

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Room temperature synthesis of c-AlN thin films by nitrogen-ion-assisted pulsed laser deposition von Ren, Z. M., Lu, Y. F., Ni, H. Q., Liew, T. Y. F., Cheong, B. A., Chow, S. K., Ng, M. L., Wang, J. P.

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The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates von Gong, Z, Fang, Z D, Xu, X H, Miao, Z H, Ni, H Q, Niu, Z C, Feng, S L

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Optical transitions of positively charged excitons and biexcitons in single InAs quantum dots von Chang, X. Y., Dou, X. M., Sun, B. Q., Xiong, Y. H., Niu, Z. C., Ni, H. Q., Jiang, D. S.

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3D numerical modeling of non-isotropic turbulent buoyant helicoidal flow and heat transfer in a curved open channel von Shen, Yong-Ming, Ng, Chiu-On, Ni, Hao-Qing

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