50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors von Nguyen, L.D., Brown, A.S., Thompson, M.A., Jelloian, L.M.

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Design and performance of wideband, low-noise, millimeter-wave amplifiers for Microwave Anisotropy Probe radiometers von Pospieszalski, M.W., Wollack, E.J., Bailey, N., Thacker, D., Webber, J., Nguyen, L.D., Le, N., Lui, M.

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Supreme Laryngeal Mask Airway versus Face Mask during Neonatal Resuscitation: A Randomized Controlled Trial von Trevisanuto, Daniele, MD, Cavallin, Francesco, MS, Nguyen, Loi Ngoc, MD, Nguyen, Tien Viet, MD, Tran, Linh Dieu, MD, Tran, Chien Dinh, MD, Doglioni, Nicoletta, MD, Micaglio, Massimo, MD, Moccia, Luciano, MR

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Millimeter wave InP HEMT technology: Performance and applications von Nguyen, Loi D, Le, Minh V, Liu, Takyiu, Lui, Mark, Kaneko, Karen, Holzman, Eric, Delaney, Michael J

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High-performance AlGaAs/InGaAs/GaAs PHEMTs for K and Ka-band applications von Kiziloglu, K., Ming Hu, Harvey, D.S., Widman, R.D., Hooper, C.E., Janke, P.B., Brown, J.J., Nguyen, L.D., Docter, D.P., Burkhart, S.R.

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High-power V-band AlInAs/GaInAs on InP HEMTs von Matloubian, M., Brown, A.S., Nguyen, L.D., Melendes, M.A., Larson, L.E., Delancey, M.J., Pence, J.E., Rhodes, R.A., Thompson, M.A., Henige, J.A.

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V-band high-efficiency high-power AlInAs/GaInAs/InP HEMT's von Matloubian, M., Jelloian, L.M., Brown, A.S., Nguyen, L.D., Larson, L.E., Delaney, M.J., Thompson, M.A., Rhodes, R.A., Pence, J.E.

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Ultra-high speed modulation-doped field-effect transistors: a tutorial review von Nguyen, L.D., Larson, L.E., Mishra, U.K.

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155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillators von Rosenbaum, S.E., Kormanyos, B.K., Jelloian, L.M., Matloubian, M., Brown, A.S., Larson, L.E., Nguyen, L.D., Thompson, M.A., Katehi, L.P.B., Rebeiz, G.M.

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Characterization of ultra-high-speed pseudomorphic AlGaAs/InGaAs (on GaAs) MODFETs von Nguyen, L.D., Tasker, P.J., Radulescu, D.C., Eastman, L.F.

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Influence of quantum-well width on device performance of Al0.30Ga0.70As/In0.25Ga0.75As (on GaAs) MODFET's von NGUYEN, L. D, RADULESCU, D. C, FOISY, M. C, TASKER, P. J, EASTMAN, L. F

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Design and performance of wideband, low-noise, millimeter-wave amplifiers for microwave anisotropy probe radiometers von Pospieszalski, M.W., Wollack, E.J., Bailey, N., Thacker, D., Webber, J., Nguyen, L.D., Le, M., Lui, M.

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0.2-μm Gate-length atomic-planar doped pseudomorphic Al0.3Ga0.7As/In0.25Ga0.75As MODFET's with fT over 120 GHz von NGUYEN, L. D, RADULESCU, D. C, TASKER, P. J, SCHAFF, W. J, EASTMAN, L. F

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Millimeter-wave waveguide-bandwidth cryogenically-coolable InP HEMT amplifiers von Pospieszalski, M.W., Lakatosh, W.J., Wollack, E., Nguyen, L.D., Minh Le, Lui, M., Takyiu Liu

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Q- and E-band cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs von Pospieszalski, M.W., Lakatosh, W.J., Nguyen, L.D., Lui, M., Takyiu Lin, Minh Le, Thompson, M.A., Delaney, M.J.

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Recent Advances in Ultrafast High-Electron-Mobility Transistor-Technology von Nguyen, Loi D

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Very low noise and low power operation of cryogenic AlInAs/GaInAs/InP HFET's von Pospieszalski, M.W., Nguyen, L.D., Lui, M., Liu, T., Thompson, M.A., Delaney, M.I.

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Fabrication process for AlxIn1-xAs/GayIn1-yAs power HFET ohmic contacts von MATLOUBIAN, MEHRAN, SCHMITZ, ADELE, NGUYEN, LOI D, JELLOIAN, LINDA

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High yield sub-micron gate FETs von NGUYEN, LOI D, LE, MINH V

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High yield electron-beam gate fabrication method for sub-micron gate FETS von NGUYEN, LOI D, LE, MINH V

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