3-D Sequential Stacked Planar Devices Featuring Low-Temperature Replacement Metal Gate Junctionless Top Devices With Improved Reliability von Vandooren, A., Franco, J., Parvais, B., Wu, Z., Witters, L., Walke, A., Li, W., Peng, L., Deshpande, V., Bufler, F. M., Rassoul, N., Hellings, G., Jamieson, G., Inoue, F., Verbinnen, G., Devriendt, K., Teugels, L., Heylen, N., Vecchio, E., Zheng, T., Rosseel, E., Vanherle, W., Hikavyy, A., Chan, B. T., Ritzenthaler, R., Besnard, G., Schwarzenbach, W., Gaudin, G., Radu, I., Nguyen, B.-Y., Waldron, N., De Heyn, V., Mocuta, D., Collaert, N.

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Crystallization in hafnia- and zirconia-based systems von Ushakov, S. V., Navrotsky, A., Yang, Y., Stemmer, S., Kukli, K., Ritala, M., Leskelä, M. A., Fejes, P., Demkov, A., Wang, C., Nguyen, B.-Y., Triyoso, D., Tobin, P.

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Impact of a 10 nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32 nm node and below von Fenouillet-Beranger, C., Perreau, P., Denorme, S., Tosti, L., Andrieu, F., Weber, O., Monfray, S., Barnola, S., Arvet, C., Campidelli, Y., Haendler, S., Beneyton, R., Perrot, C., de Buttet, C., Gros, P., Pham-Nguyen, L., Leverd, F., Gouraud, P., Abbate, F., Baron, F., Torres, A., Laviron, C., Pinzelli, L., Vetier, J., Borowiak, C., Margain, A., Delprat, D., Boedt, F., Bourdelle, K., Nguyen, B.-Y., Faynot, O., Skotnicki, T.

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Extraction of Isothermal Condition and Thermal Network in UTBB SOI MOSFETs von Karim, M. A., Chauhan, Y. S., Venugopalan, S., Sachid, A. B., Lu, D. D., Nguyen, B. Y., Faynot, O., Niknejad, A. M., Hu, C.

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Advanced FD-SOI and Beyond Low Temperature SmartCut™ Enables High Density 3-D SoC Applications von Schwarzenbach, W., Daval, N., Maleville, C., Nguyen, B.-Y., Ecarnot, L., Loubriat, S., Detard, M., Cela, E., Bertrand-Giuliani, C., Chabanne, G., Maddalon, C.

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Transistors on hybrid UTBB/Bulk substrates fabricated by local internal BOX dissolution von Nguyen, P., Andrieu, F., Cassé, M., Tabone, C., Perreau, P., Lafond, D., Dansas, H., Tosti, L., Veytizou, C., Landru, D., Kononchuk, O., Guiot, E., Nguyen, B.-Y., Faynot, O., Poiroux, T.

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Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond von Andrieu, F, Weber, O, Mazurier, J, Thomas, O, Noel, J.-P, Fenouillet-Béranger, C, Mazellier, J.-P, Perreau, P, Poiroux, T, Morand, Y, Morel, T, Allegret, S, Loup, V, Barnola, S, Martin, F, Damlencourt, J.-F, Servin, I, Cassé, M, Garros, X, Rozeau, O, Jaud, M.-A, Cibrario, G, Cluzel, J, Toffoli, A, Allain, F, Kies, R, Lafond, D, Delaye, V, Tabone, C, Tosti, L, Brévard, L, Gaud, P, Paruchuri, V, Bourdelle, K K, Schwarzenbach, W, Bonnin, O, Nguyen, B.-Y, Doris, B, Bœuf, F, Skotnicki, T, Faynot, O

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Safety and tolerability of caspofungin acetate in the treatment of fungal infections von Sable, C.A., Nguyen, B-Y T., Chodakewitz, J.A., DiNubile, M.J.

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Dual strained channel CMOS in FDSOI architecture: New insights on the device performance von Le Royer, C., Cassé, M., Cooper, D., Andrieu, F., Weber, O., Brevard, L., Perreau, P., Damlencourt, J.-F., Baudot, S., Prévitali, B., Tabone, C., Allain, F., Scheiblin, P., Rauer, C., Figuet, C., Aulnette, C., Daval, N., Nguyen, B.-Y., Bourdelle, K.K., Gyani, J., Valenza, M.

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Strain distribution in a transistor using self-assembled SiGe islands in source and drain regions von Kar, G. S., Kiravittaya, S., Denker, U., Nguyen, B.-Y., Schmidt, O. G.

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Study of substrate orientations impact on Ultra Thin Buried Oxide (UTBOX) FDSOI High-K Metal gate technology performances von Ben Akkez, Imed, Fenouillet-Beranger, Claire, Cros, Antoine, Perreau, Pierre, Haendler, Sébatien, Weber, Olivier, Andrieu, François, Pellissier-Tanon, D., Abbate, F., Richard, C., Beneyton, R., Gouraud, P., Margain, A., Borowiak, C., Gourvest, E., Bourdelle, K.K., Nguyen, B.Y., Poiroux, T., Skotnicki, Thomas, Faynot, Olivier, Balestra, Francis, Ghibaudo, Gérard, Boeuf, Fréderic

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Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS von Khakifirooz, A., Cheng, K., Nagumo, T., Loubet, N., Adam, T., Reznicek, A., Kuss, J., Shahrjerdi, D., Sreenivasan, R., Ponoth, S., He, H., Kulkarni, P., Liu, Q., Hashemi, P., Khare, P., Luning, S., Mehta, S., Gimbert, J., Zhu, Y., Zhu, Z., Li, J., Madan, A., Levin, T., Monsieur, F., Yamamoto, T., Naczas, S., Schmitz, S., Holmes, S., Aulnette, C., Daval, N., Schwarzenbach, W., Nguyen, B.-Y, Paruchuri, V., Khare, M., Shahidi, G., Doris, B.

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A Self-Rectifying AlOy Bipolar RRAM With Sub-50-μA Set/Reset Current for Cross-Bar Architecture von TRAN, X. A, ZHU, W, LIU, W. J, YEO, Y. C, NGUYEN, B. Y, HONG YU YU

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Understanding and optimizing the floating body retention in FDSOI UTBOX von Aoulaiche, M., Simoen, E., Caillat, C., Witters, L., Bourdelle, K.K., Nguyen, B.-Y., Martino, J., Claeys, C., Fazan, P., Jurczak, M.

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A process/physics-based compact model for nonclassical CMOS device and circuit design von Fossum, J.G., Ge, L., Chiang, M.-H., Trivedi, V.P., Chowdhury, M.M., Mathew, L., Workman, G.O., Nguyen, B.-Y.

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Self-Selection Unipolar HfOx-Based RRAM von TRAN, X. A, ZHU, W, LIU, W. J, YEO, Y. C, NGUYEN, B. Y, YU, H. Y

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Impact of alternate definitions of fever resolution on the composite endpoint in clinical trials of empirical antifungal therapy for neutropenic patients with persistent fever: ana... von De Pauw, B.E., Sable, C.A., Walsh, T.J., Lupinacci, R.J., Bourque, M.R., Wise, B.A., Nguyen, B.-Y., DiNubile, M.J., Teppler, H.

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Coupling effects and channels separation in FinFETs von Daugé, F., Pretet, J., Cristoloveanu, S., Vandooren, A., Mathew, L., Jomaah, J., Nguyen, B.-Y.

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Thermal stability of LaAlO3/Si deposited by laser molecular-beam epitaxy von Lu, X. B., Zhang, X., Huang, R., Lu, H. B., Chen, Z. H., Xiang, W. F., He, M., Cheng, B. L., Zhou, H. W., Wang, X. P., Wang, C. Z., Nguyen, B. Y.

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A High-Yield HfOx-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration von TRAN, X. A, YU, H. Y, NGUYEN, B. Y, LI, M. F, YEO, Y. C, WU, L, LIU, W. J, WANG, Z. R, FANG, Z, PEY, K. L, SUN, X. W, DU, A. Y

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