Active Silicon Integrated Nanophotonics: Ferroelectric BaTiO3 Devices von Xiong, Chi, Pernice, Wolfram H. P, Ngai, Joseph H, Reiner, James W, Kumah, Divine, Walker, Frederick J, Ahn, Charles H, Tang, Hong X

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Tuning the Structure of Nickelates to Achieve Two-Dimensional Electron Conduction von Kumah, Divine P., Disa, Ankit S., Ngai, Joseph H., Chen, Hanghui, Malashevich, Andrei, Reiner, James W., Ismail-Beigi, Sohrab, Walker, Frederick J., Ahn, Charles H.

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Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices von Kumah, Divine P., Ngai, Joseph H., Kornblum, Lior

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Transmission Electron Microscopy Studies of Bufferless Epitaxial GeSn on (0001) Sapphire von Jiang, Jiechao, Chetuya, Nonso Martin, Ngai, Joseph H, Grzybowski, Gordon J., Meletis, Efstathios I.

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Epitaxial twin coupled microstructure in GeSn films prepared by remote plasma enhanced chemical vapor deposition von Jiang, Jiechao, Chetuya, Nonso Martin, Ngai, Joseph H., Grzybowski, Gordon J., Meletis, Efstathios I., Claflin, Bruce

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Interfacial structure of SrZrxTi1−xO3 films on Ge von Chen, Tongjie, Ahmadi-Majlan, Kamyar, Lim, Zheng Hui, Zhang, Zhan, Ngai, Joseph H., Kemper, Alexander F., Kumah, Divine P.

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Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness von Ahmadi-Majlan, Kamyar, Chen, Tongjie, Lim, Zheng Hui, Conlin, Patrick, Hensley, Ricky, Chrysler, Matthew, Su, Dong, Chen, Hanghui, Kumah, Divine P., Ngai, Joseph H.

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An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor von Moghadam, Reza M, Xiao, Zhiyong, Ahmadi-Majlan, Kamyar, Grimley, Everett D, Bowden, Mark, Ong, Phuong-Vu, Chambers, Scott A, Lebeau, James M, Hong, Xia, Sushko, Peter V, Ngai, Joseph H

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Interfacial structure in epitaxial perovskite oxides on (001) Ge crystal von Shen, Xuan, Ahmadi-Majlan, K., Ngai, Joseph H., Wu, Di, Su, Dong

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Band‐Gap Engineering at a Semiconductor–Crystalline Oxide Interface von Jahangir‐Moghadam, Mohammadreza, Ahmadi‐Majlan, Kamyar, Shen, Xuan, Droubay, Timothy, Bowden, Mark, Chrysler, Matthew, Su, Dong, Chambers, Scott A., Ngai, Joseph H.

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Achieving A-Site Termination on La0.18Sr0.82Al0.59Ta0.41O3 Substrates von Ngai, Joseph H., Schwendemann, Todd C., Walker, Anna E., Segal, Yaron, Walker, Fred J., Altman, Eric I., Ahn, Charles H.

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Interfacial Structure in Epitaxial Perovskite Oxides on (001) Ge Crystal von Shen, Xuan, Ahmadi-Majlan, K., Ngai, Joseph H., Wu, Di, Su, Dong

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Temperature-dependent morphology and composition of ultra-thin GeSn epilayers prepared by remote plasma enhanced chemical vapor deposition von Jiang, Jiechao, Chetuya, Nonso Martin, Meletis, Efstathios I., Ngai, Joseph H., Grzybowski, Gordon J., Claflin, Bruce

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Band‐Gap Engineering: Band‐Gap Engineering at a Semiconductor–Crystalline Oxide Interface (Adv. Mater. Interfaces 4/2015) von Jahangir‐Moghadam, Mohammadreza, Ahmadi‐Majlan, Kamyar, Shen, Xuan, Droubay, Timothy, Bowden, Mark, Chrysler, Matthew, Su, Dong, Chambers, Scott A., Ngai, Joseph H.

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Preface for the special topic collection honoring Dr. Scott Chambers’ 70th birthday and his leadership in the science and technology of oxide thin films von Kaspar, Tiffany C., Du, Yingge, Engelhard, Mark H., Baer, Don R., Jalan, Bharat, Ngai, Joseph H.

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Effect of buffer termination on intermixing and conductivity in LaTiO3/SrTiO3 heterostructures integrated on Si(100) von Chen, Tongjie, Ahmadi-Majlan, Kamyar, Lim, Zheng Hui, Zhang, Zhan, Ngai, Joseph H., Kumah, Divine P.

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Effect of buffer termination on intermixing and conductivity in LaTiO 3 /SrTiO 3 heterostructures integrated on Si(100) von Chen, Tongjie, Ahmadi-Majlan, Kamyar, Lim, Zheng Hui, Zhang, Zhan, Ngai, Joseph H., Kumah, Divine P.

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Effect of buffer termination on intermixing and conductivity in LaTiO3/SrTiO3 heterostructures integrated on Si(100) von Chen, Tongjie, Ahmadi-Majlan, Kamyar, Lim, Zheng Hui, Zhang, Zhan, Ngai, Joseph H., Kumah, Divine P.

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Interfacial structure of SrZr x Ti1− x O3 films on Ge von Chen, Tongjie, Ahmadi-Majlan, Kamyar, Lim, Zheng Hui, Zhang, Zhan, Ngai, Joseph H., Kemper, Alexander F., Kumah, Divine P.

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Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates von Lim, Zheng Hui, Chrysler, Matthew, Kumar, Abinash, Mauthe, Jacob P., Kumah, Divine P., Richardson, Chris, LeBeau, James M., Ngai, Joseph H.

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