Graphene Transistor as a Probe for Streaming Potential von Newaz, A. K. M, Markov, D. A, Prasai, D, Bolotin, K. I

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Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy von Klots, A. R., Newaz, A. K. M., Wang, Bin, Prasai, D., Krzyzanowska, H., Lin, Junhao, Caudel, D., Ghimire, N. J., Yan, J., Ivanov, B. L., Velizhanin, K. A., Burger, A., Mandrus, D. G., Tolk, N. H., Pantelides, S. T., Bolotin, K. I.

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Visualization of Defect-Induced Excitonic Properties of the Edges and Grain Boundaries in Synthesized Monolayer Molybdenum Disulfide von Yore, A. E, Smithe, K. K. H, Crumrine, W, Miller, A, Tuck, J. A, Redd, B, Pop, E, Wang, Bin, Newaz, A. K. M

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High Responsivity, Low Dark Current Ultraviolet Photodetectors Based on Two-Dimensional Electron Gas Interdigitated Transducers von Satterthwaite, Peter F, Yalamarthy, Ananth Saran, Scandrette, Noah A, Newaz, A. K. M, Senesky, Debbie G

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Photoresponse of Natural van der Waals Heterostructures von Ray, Kyle, Yore, Alexander E, Mou, Tong, Jha, Sauraj, Smithe, Kirby K. H, Wang, Bin, Pop, Eric, Newaz, A. K. M

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Layer-Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultraflat Metals von Lee, Hao, Deshmukh, Sanchit, Wen, Jing, Costa, Viviane Z, Schuder, Joachim S, Sanchez, Michael, Ichimura, Andrew S, Pop, Eric, Wang, Bin, Newaz, A. K. M

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Ozone-exposure and annealing effects on graphene-on-SiO2 transistors von Zhang, E X, Newaz, K M, Wang, B, Zhang, C X, Fleetwood, D M, Bolotin, K I, Schrimpf, R D, Pantelides, S T, Alles, M L

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One-dimensional edge contact to encapsulated MoS2 with a superconductor von Seredinski, A., Arnault, E. G., Costa, V. Z., Zhao, L., Larson, T. F. Q., Watanabe, K., Taniguchi, T., Amet, F., Newaz, A. K. M., Finkelstein, G.

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Electrical control of optical properties of monolayer MoS2 von Newaz, A.K.M., Prasai, D., Ziegler, J.I., Caudel, D., Robinson, S., Haglund Jr, R.F., Bolotin, K.I.

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Vibrational Properties of a Naturally Occurring Semiconducting van der Waals Heterostructure von Costa, Viviane Zurdo, Liang, Liangbo, Vaziri, Sam, Miller, Addison, Pop, Eric, Newaz, A. K. M

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60 A/W high voltage GaN avalanche photodiode demonstrating robust avalanche and high gain up to 525 K von Ji, Dong, Ercan, Burcu, Benson, Garrett, Newaz, A. K. M., Chowdhury, Srabanti

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Electrical Control of near-Field Energy Transfer between Quantum Dots and Two-Dimensional Semiconductors von Prasai, Dhiraj, Klots, Andrey R, Newaz, AKM, Niezgoda, J. Scott, Orfield, Noah J, Escobar, Carlos A, Wynn, Alex, Efimov, Anatoly, Jennings, G. Kane, Rosenthal, Sandra J, Bolotin, Kirill I

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Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment von Newaz, A.K.M., Puzyrev, Yevgeniy S., Wang, Bin, Pantelides, Sokrates T., Bolotin, Kirill I.

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Large array fabrication of high performance monolayer MoS2 photodetectors von Yore, Alexander E., Smithe, Kirby K. H., Jha, Sauraj, Ray, Kyle, Pop, Eric, Newaz, A. K. M.

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Fluidic measurement of electric field sensitivity of Ti-GaAs Schottky junction gated field effect biosensors von Chang, Woo-Jin, Suk, Ho-Jun, Newaz, A. K. M, Wallace, Kirk D, Wickline, Samuel A, Solin, Stuart A, Bashir, Rashid

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Shot-noise characteristics of triple-barrier resonant-tunneling diodes von Newaz, A. K. M., Song, W., Mendez, E. E., Lin, Y., Nitta, J.

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Layer-Dependent Interfacial Transport and Optoelectrical Properties of MoS 2 on Ultraflat Metals von Lee, Hao, Deshmukh, Sanchit, Wen, Jing, Costa, Viviane Z, Schuder, Joachim S, Sanchez, Michael, Ichimura, Andrew S, Pop, Eric, Wang, Bin, Newaz, A K M

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Low-Energy X-ray and Ozone-Exposure Induced Defect Formation in Graphene Materials and Devices von En Xia Zhang, Newaz, A. K. M., Bin Wang, Bhandaru, S., Zhang, C. X., Fleetwood, D. M., Bolotin, K. I., Pantelides, S. T., Alles, M. L., Schrimpf, R. D., Weiss, S. M., Reed, R. A., Weller, R. A.

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Surface Reactions and Defect Formation in Irradiated Graphene Devices von Puzyrev, Y. S., Wang, B., Zhang, E. X., Zhang, C. X., Newaz, A. K. M., Bolotin, K. I., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T.

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Dimensional crossover and weak localization in a 90 nm n -GaAs thin film von Gilbertson, A. M., Newaz, A. K. M., Chang, Woo-Jin, Bashir, R., Solin, S. A., Cohen, L. F.

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