Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition von Neumayer, D. A., Cartier, E.

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Dielectric relaxation of Ba0.7Sr0.3TiO3 thin films from 1 mHz to 20 GHz von Baniecki, J. D., Laibowitz, R. B., Shaw, T. M., Duncombe, P. R., Neumayer, D. A., Kotecki, D. E., Shen, H., Ma, Q. Y.

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Preparation and structure of porous dielectrics by plasma enhanced chemical vapor deposition von Gates, S. M., Neumayer, D. A., Sherwood, M. H., Grill, A., Wang, X., Sankarapandian, M.

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Metallization induced band bending of SrTiO3(100) and Ba0.7Sr0.3TiO3 von Copel, M., Duncombe, P. R., Neumayer, D. A., Shaw, T. M., Tromp, R. M.

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Second-harmonic generation of poled BaTiO3 thin films von LU, H. A, WILLS, L. A, WESSELS, B. W, LIN, W. P, ZHANG, T. G, WONG, G. K, NEUMAYER, D. A, MARKS, T. J

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Compensation doping of Ba0.7Sr0.3TiO3 thin films von Copel, M., Baniecki, J. D., Duncombe, P. R., Kotecki, D., Laibowitz, R., Neumayer, D. A., Shaw, T. M.

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Growth of Group III Nitrides. A Review of Precursors and Techniques von Neumayer, Deborah A, Ekerdt, John G

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Low-Voltage, High-Mobility Pentacene Transistors with Solution-Processed High Dielectric Constant Insulators von Dimitrakopoulos, C. D., Kymissis, I., Purushothaman, S., Neumayer, D. A., Duncombe, P. R., Laibowitz, R. B.

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Nonlinear optical properties of textured strontium barium niobate thin films prepared by metalorganic chemical vapor deposition von Nystrom, M. J., Wessels, B. W., Lin, W. P., Wong, G. K., Neumayer, D. A., Marks, T. J.

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Structure of low dielectric constant to extreme low dielectric constant SiCOH films: Fourier transform infrared spectroscopy characterization von Grill, Alfred, Neumayer, Deborah A.

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Encapsulating Bis(β-Ketoiminato) Polyethers. Volatile, Fluorine-Free Barium Precursors for Metal−Organic Chemical Vapor Deposition von Studebaker, Daniel B, Neumayer, Deborah A, Hinds, Bruce J, Stern, Charlotte L, Marks, Tobin J

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Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering von Fischetti, Massimo V., Neumayer, Deborah A., Cartier, Eduard A.

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Determination of Ir consumption during thermal oxidation and PbZrxTi1−xO3 processing using Bragg-peak fringe analysis von Saenger, K. L., Neumayer, D. A.

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Volatility by Design. Synthesis and Characterization of Polyether Adducts of Bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)barium and Their Implementation as Metal−Organic Chemical... von Belot, John A, Neumayer, Deborah A, Reedy, Charles J, Studebaker, Daniel B, Hinds, Bruce J, Stern, Charlotte L, Marks, Tobin J

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GaN Film Growth Using Single-Source Precursors von Lakhotia, Vikas, Neumayer, Deborah A, Cowley, A. H, Jones, R. A, Ekerdt, J. G

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Barium .beta.-ketoiminate complexes containing appended ether "lariats". Synthesis, characterization, and implementation as fluorine-free barium MOCVD precursors von Schulz, Douglas L, Hinds, Bruce J, Neumayer, Deborah A, Stern, Charlotte L, Marks, Tobin J

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Oxygen Stoichiometry in PdOxand PdOx/Pt Electrode Layers During Processing of Ferroelectric and High-epsilon Perovskites von Saenger, K. L., Cabral, C., Duncombe, P. R., Grill, A., Neumayer, D. A.

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Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si∕SiO2 interlayers von Koester, S. J., Kiewra, E. W., Sun, Yanning, Neumayer, D. A., Ott, J. A., Copel, M., Sadana, D. K., Webb, D. J., Fompeyrine, J., Locquet, J.-P., Marchiori, C., Sousa, M., Germann, R.

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OXYGEN STOICHIOMETRY IN PdOx AND PdOx/Pt ELECTRODE LAYERS DURING PROCESSING OF FERROELECTRIC AND HIGH-EPSILON PEROVSKITES von Saenger, K L, Cabral, C, Duncombe, P R, Grill, A, Neumayer, D A

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Materials characterization of ZrO{sub 2}--SiO{sub 2} and HfO{sub 2}--SiO{sub 2} binary oxides deposited by chemical solution deposition von Neumayer, D. A., Cartier, E.

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