Near band-gap nonlinearities of ZnSe crystals von Netiksis, V, Juodkazis, S, Petrauskas, M, Hönerlage, B, Levy, R, Ding, Y

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Contactless determination of the dominant photorefractive mobile charge by comparing cw and ps two-wave mixing von Juodkazis, S, Netiksis, V, Petrauskas, M, Eichler, H.J, Smandek, B, Ding, Y

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Time-resolved energy transfer and absorption bleaching measurements in CuCl microcrystallites von FALLER, P, NETIKSIS, V, GRUN, J. B, HÖNERLAGE, B

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Mapping of GaAs wafers by IR light diffraction and luminescence von Juodkazis, S., Vanagas, E., Netikšis, V., Petrauskas, M., Bykovsky, V.A., Utenko, V.I., Hitko, V.I.

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Ambipolar diffusion coefficient in molecular-beam-epitaxy-grown silicon layers von GRIVICKAS, V, NETIKSIS, V, NOREIKA, D, PETRAUSKAS, M, WILLANDER, M, HASAN, M.-A, NI, W.-X

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Picosecond dynamics of absorption bleaching in polycrystalline ZnCdTe films von NETIKSIS, V, HÖNERLAGE, B, WEIL, R, LOISON, J. L, GRUN, J. B, LEVY, R

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Investigation of p-CdTe and p-ZnxCd1−xTe Single Crystals by ps-Laser-Induced Gratings and by Photoluminescence von Rückmann, I., Petrauskas, M., Netikšis, V., Tamulaitis, G., Halfpap, J.

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Ambipolar diffusion in strained Si1-xGex(100) layers grown by molecular beam epitaxy von GRIVICKAS, V, NETIKSIS, V, NOREIKA, D, PETRAUSKAS, M, WILLANDER, M, NI, W.-X, HASAN, M.-A, HANSSON, G. V, SUNDGREN, J.-E

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Investigation of p‐CdTe and p‐Zn x Cd 1− x Te Single Crystals by ps‐Laser‐Induced Gratings and by Photoluminescence von Rückmann, I., Petrauskas, M., Netikšis, V., Tamulaitis, G., Halfpap, J.

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The Influence of High-Temperature Annealing on the Photoelectric Properties of Semi-Insulating GaAs von Petrauskas, M., Juodkazis, S., Netikšis, V., Kiliulis, R., Masteika, R., Utenko, V.

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Lateral and cross-well transport of highly and moderately excited carriers in Si1−xGex/Si superlattices von Galeckas, A., Juodkazis, S., Vanagas, E., Netiksis, V., Petrauskas, M., Bitz, A., Staehli, J. L., Willander, M.

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Picosecond spectral hole burning in ZnCdTe layers von Benhmida, M., Netiksis, V., Robino, M., Grun, J.-B., Petrauskas, M., Hönerlage, B.

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The Influence of High-Temperature Annealing on the Photoelectric Properties of Semi-Insulating GaAs von Petrauskas, M., Juodkazis, S., Netikšis, V., Kiliulis, R., Masteika, R., Utenko, V.

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Reflectivity and Dynamic Gratings in Implanted Si Induced by Picosecond Laser Pulses von Galeckas, A., Netiksis, V., Petrauskas, M., Vaitkus, J.

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Nonlinear Recombination and Diffusion Processes in Si and GaAs von Petrauskas, M., Lenzner, M., Noreika, D., Netiksis, V.

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Ambipolar diffusion in strained Si1− x Ge x (100) layers grown by molecular beam epitaxy von Grivickas, V., Netiksis, V., Noreika, D., Petrauskas, M., Willander, M., Ni, W.-X., Hasan, M.-A., Hansson, G. V., Sundgren, J.-E.

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