Lateral straggling of implanted aluminum in 4H-SiC von Müting, J., Bobal, V., Neset Sky, T., Vines, L., Grossner, U.

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Gallium diffusion in zinc oxide via the paired dopant-vacancy mechanism von Sky, T. N., Johansen, K. M., Riise, H. N., Svensson, B. G., Vines, L.

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Influence of annealing atmosphere on formation of electrically-active defects in rutile TiO2 von Zimmermann, C., Bonkerud, J., Herklotz, F., Sky, T. N., Hupfer, A., Monakhov, E., Svensson, B. G., Vines, L.

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The interaction between lithium acceptors and gallium donors in zinc oxide von Sky, T. N., Johansen, K. M., Frodason, Y. K., Svensson, B. G., Vines, L.

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Secondary ion mass spectrometry as a tool to study selenium gradient in Cu2ZnSn(S,Se)4 von Grini, Sigbjørn, Ross, Nils, Sky, Thomas Neset, Persson, Clas, Platzer‐Björkman, Charlotte, Vines, Lasse

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Impurity Diffusion in Single Crystal Zinc Oxide von Sky, Thomas Neset

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Influence of Fermi level position on vacancy-assisted diffusion of aluminum in zinc oxide von Sky, T. N., Johansen, K. M., Venkatachalapathy, V., Svensson, B. G., Vines, L., Tuomisto, F.

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Secondary ion mass spectrometry as a tool to study selenium gradient in Cu 2 ZnSn(S,Se) 4 von Grini, Sigbjørn, Ross, Nils, Sky, Thomas Neset, Persson, Clas, Platzer‐Björkman, Charlotte, Vines, Lasse

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Nickel Diffusion and Configuration in Crystalline Zinc Oxide von Sky, Thomas Neset

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