Theoretical tools for the description of charge transport in disordered organic semiconductors von Nenashev, A V, Oelerich, J O, Baranovskii, S D

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Calculating the Efficiency of Exciton Dissociation at the Interface between a Conjugated Polymer and an Electron Acceptor von Baranovskii, S. D, Wiemer, M, Nenashev, A. V, Jansson, F, Gebhard, F

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FUSION OF THE OPTICAL AND RADAR IMAGES OF THE LAND SURFACE IN MULTI-POSITION ON-BOARD SYSTEMS FOR OPERATIONAL MONITORING von Khanykov, I. G., Nenashev, V. A.

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Advanced percolation solution for hopping conductivity von Nenashev, A. V., Jansson, F., Oelerich, J. O., Huemmer, D., Dvurechenskii, A. V., Gebhard, F., Baranovskii, S. D.

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Luminescence of Spatially Ordered Self-Assembled Solitary Ge(Si) Nanoislands and their Groups Incorporated into Photonic Crystals von Smagina, Zh. V., Novikov, A. V., Stepikhova, M. V., Zinovyev, V. A., Rodyakina, E. E., Nenashev, A. V., Sergeev, S. M., Peretokin, A. V., Kuchinskaya, P. A., Shaleev, M. V., Gusev, S. A., Dvurechenskii, A. V.

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Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy von Abramkin, D. S., Petrushkov, M. O., Emelyanov, E. A., Nenashev, A. V., Yesin, M. Yu, Vasev, A. V., Putyato, M. A., Bogomolov, D. B., Gutakovskiy, A. K., Preobrazhenskiy, V. V.

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Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface von Rudin, S. A., Smagina, Zh. V., Zinovyev, V. A., Novikov, P. L., Nenashev, A. V., Rodyakina, E. E., Dvurechenskii, A. V.

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Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors von Nenashev, A. V., Oelerich, J. O., Dvurechenskii, A. V., Gebhard, F., Baranovskii, S. D.

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Atomic and energy structure of InAs/AlAs quantum dots von Shamirzaev, T. S., Nenashev, A. V., Gutakovskii, A. K., Kalagin, A. K., Zhuravlev, K. S., Larsson, M., Holtz, P. O.

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Spin dynamics in SiGe quantum dot lines and ring molecules von Zinovieva, A. F., Nenashev, A. V., Dvurechenskii, A. V.

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On the Feasibility of Transition to Electric Vehicles von Beloborodov, S. S., Gasho, E. G., Nenashev, A. V.

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Photoluminescence of compact GeSi quantum dot groups with increased probability of finding an electron in Ge von Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Teys, S. A., Dvurechenskii, A. V., Borodavchenko, O. M., Zhivulko, V. D., Mudryi, A. V.

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Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors von Baranovskii, S. D., Nenashev, A. V., Oelerich, J. O., Greiner, S. H. M., Dvurechenskii, A. V., Gebhard, F.

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Quantum probabilities from combination of Zurekʼs envariance and Gleasonʼs theorem von Nenashev, A V

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On the efficiency of exciton dissociation at the interface between a conjugated polymer and an electron acceptor von Wiemer, M., Nenashev, A. V., Jansson, F., Baranovskii, S. D.

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Electron Spin Resonance in Heterostructures with Ring Molecules of GeSi Quantum Dots von Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Shklyaev, A. A., Kulik, L. V., Dvurechenskii, A. V.

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Analytical Expression for the Distribution of Elastic Strain Created by a Polyhedral Inclusion with Arbitrary Eigenstrain von Nenashev, A. V., Dvurechenskii, A. V.

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Energy position of the transport path in disordered organic semiconductors von Oelerich, J O, Jansson, F, Nenashev, A V, Gebhard, F, Baranovskii, S D

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Comment on “Charge transport in disordered semiconducting polymers driven by nuclear tunneling” von Nenashev, A. V., Gebhard, F., Baranovskii, S. D.

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Hall effect in hopping conduction in an ensemble of quantum dots von Stepina, N. P., Nenashev, A. V., Dvurechenskii, A. V.

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