Effect of surface roughness and H–termination chemistry on diamond's semiconducting surface conductance von Wade, T., Geis, M.W., Fedynyshyn, T.H., Vitale, S.A., Varghese, J.O., Lennon, D.M., Grotjohn, T.A., Nemanich, R.J., Hollis, M.A.

Volltext

Chemical and semiconducting properties of NO2-activated H-terminated diamond von Geis, M.W., Fedynyshyn, T.H., Plaut, M.E., Wade, T.C., Wuorio, C.H., Vitale, S.A., Varghese, J.O., Grotjohn, T.A., Nemanich, R.J., Hollis, M.A.

Volltext

Kinetics of Ga and In desorption from (7 × 7) Si(1 1 1) and (3 × 3) 6H-SiC(0 0 0 1) surfaces von King, S.W., Davis, R.F., Nemanich, R.J.

Volltext

Surface cleaning, electronic states and electron affinity of diamond (100), (111) and (110) surfaces von Baumann, P.K, Nemanich, R.J

Volltext

A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices von HINKLE, C. L, FULTON, C, NEMANICH, R. J, LUCOVSKY, G

Volltext

Using negative electron affinity diamond emitters to mitigate space charge in vacuum thermionic energy conversion devices von Smith, J.R., Bilbro, G.L., Nemanich, R.J.

Volltext

Investigation of the mechanism of polarization switching in ferroelectric capacitors by three-dimensional piezoresponse force microscopy von RODRIGUEZ, B. J, GRUVERMAN, A, KINGON, A. I, NEMANICH, R. J, CROSS, J. S

Volltext

On the thermionic emission from nitrogen-doped diamond films with respect to energy conversion von Koeck, F.A.M., Garguilo, J.M., Nemanich, R.J.

Volltext

High negative ion yield from light molecule scattering von Scheer, J.A., Wieser, M., Wurz, P., Bochsler, P., Hertzberg, E., Fuselier, S.A., Koeck, F.A., Nemanich, R.J., Schleberger, M.

Volltext

Gold particle formation via photoenhanced deposition on lithium niobate von Zaniewski, A.M., Meeks, V., Nemanich, R.J.

Volltext

Electron emission microscopy of nano-crystal graphitic films as high current density electron sources von Koeck, F.A.M., Obraztsov, A.N., Nemanich, R.J.

Volltext

Stable, low-resistance, 1.5 to 3.5 kΩ sq−1, diamond surface conduction with a mixed metal-oxide protective film von Geis, M.W., Varghese, J.O., Hollis, M.A., Yichen, Y., Nemanich, R.J., Wuorio, C.H., Zhang, Xi, Turner, G.W., Warnock, S.M., Vitale, S.A., Molnar, R.J., Osadchy, T., Zhang, B.

Volltext

UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiC von Benjamin, M.C., Bremser, M.D., Weeks, T.W., King, S.W., Davis, R.F., Nemanich, R.J.

Volltext

Dependence of the C49–C54 TiSi2 phase transition temperature on film thickness and Si substrate orientation von Jeon, Hyeongtag, Yoon, Gangjoong, Nemanich, R.J

Volltext

Negative electron affinity surfaces of aluminum nitride and diamond von Nemanich, R.J., Baumann, P.K., Benjamin, M.C., King, S.W., van der Weide, J., Davis, R.F.

Volltext

Dynamics of dysprosium silicide nanostructures on Si(001) and (111) surfaces von Zeman, M. C., Nemanich, R. J., Sunda-Meya, A.

Volltext

Growth and characterization of GaN single crystals von Balkaş, C.M., Sitar, Z., Bergman, L., Shmagin, I.K., Muth, J.F., Kolbas, R., Nemanich, R.J., Davis, R.F.

Volltext

Hydrogen desorption kinetics and band bending for 6H–SiC(0 0 0 1) surfaces von King, S.W., Davis, R.F., Nemanich, R.J.

Volltext

Electron emission properties of crystalline diamond and III-nitride surfaces von Nemanich, R.J, Baumann, P.K, Benjamin, M.C, Nam, O.-H, Sowers, A.T, Ward, B.L, Ade, H, Davis, R.F

Volltext

Selective bond breaking in amorphous hydrogenated silicon by using Duke FEL von Gracin, D, Borjanovic, V, Vlahovic, B, Sunda-Meya, A, Patterson, T.M, Dutta, J.M, Hauger, S, Pinayev, I, Ware, M.E, Alexson, D, Nemanich, R.J, von Roedern, B

Volltext