Multi-Layer Hybrid Edge Termination for III-N Power Devices von Jacobs, Alan G, Hontz, Michael Robert, Hobart, Karl D, Ebrish, Mona A, Anderson, Travis J, Nelson, Tolen Michael, Pandey, Prakash, Khanna, Raghav, Porter, Matthew A, Koehler, Andrew D, Georgiev, Daniel G

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Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance von Pandey, Prakash, Nelson, Tolen M., Hontz, Michael R., Georgiev, Daniel G., Khanna, Raghav, Jacobs, Alan G., Lundh, James S., Gallagher, James C., Koehler, Andrew D., Hobart, Karl D., Anderson, Travis J.

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A Simple Edge Termination Design for Vertical GaN P-N Diodes von Pandey, Prakash, Nelson, Tolen M., Collings, William M., Hontz, Michael R., Georgiev, Daniel G., Koehler, Andrew D., Anderson, Travis J., Gallagher, James C., Foster, Geoffrey M., Jacobs, Alan, Ebrish, Mona A., Gunning, Brendan P., Kaplar, Robert J., Hobart, Karl D., Khanna, Raghav

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Hybrid Edge Termination in Vertical GaN: Approximating Beveled Edge Termination via Discrete Implantations von Nelson, Tolen, Pandey, Prakash, Georgiev, Daniel G., Hontz, Michael R., Koehler, Andrew D., Hobart, Karl D., Anderson, Travis J., Ildefonso, Adrian, Khanna, Raghav

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Examination of Trapping Effects on Single-Event Transients in GaN HEMTs von Nelson, Tolen, Georgiev, Daniel G., Hontz, Michael R., Khanna, Raghav, Ildefonso, Adrian, Koehler, Andrew D., Hobart, Karl, Khachatrian, Ani, McMorrow, Dale

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