Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance von Pandey, Prakash, Nelson, Tolen M., Hontz, Michael R., Georgiev, Daniel G., Khanna, Raghav, Jacobs, Alan G., Lundh, James S., Gallagher, James C., Koehler, Andrew D., Hobart, Karl D., Anderson, Travis J.

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A Simple Edge Termination Design for Vertical GaN P-N Diodes von Pandey, Prakash, Nelson, Tolen M., Collings, William M., Hontz, Michael R., Georgiev, Daniel G., Koehler, Andrew D., Anderson, Travis J., Gallagher, James C., Foster, Geoffrey M., Jacobs, Alan, Ebrish, Mona A., Gunning, Brendan P., Kaplar, Robert J., Hobart, Karl D., Khanna, Raghav

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Hybrid Edge Termination in Vertical GaN: Approximating Beveled Edge Termination via Discrete Implantations von Nelson, Tolen, Pandey, Prakash, Georgiev, Daniel G., Hontz, Michael R., Koehler, Andrew D., Hobart, Karl D., Anderson, Travis J., Ildefonso, Adrian, Khanna, Raghav

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Examination of Trapping Effects on Single-Event Transients in GaN HEMTs von Nelson, Tolen, Georgiev, Daniel G., Hontz, Michael R., Khanna, Raghav, Ildefonso, Adrian, Koehler, Andrew D., Hobart, Karl, Khachatrian, Ani, McMorrow, Dale

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Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability von Lundh, James Spencer, Jacobs, Alan G., Pandey, Prakash, Nelson, Tolen, Georgiev, Daniel G., Koehler, Andrew D., Khanna, Raghav, Tadjer, Marko J., Hobart, Karl D., Anderson, Travis J.

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Impact of Anode Doping on Avalanche in Vertical GaN Pin Diodes with Hybrid Edge Termination Design von Ebrish, Mona, Jacobs, Alan G., Pandey, Prakash, Nelson, Tolen, Koehler, Andrew, Gallagher, James, Khanna, Raghav, Hobart, Karl D., Kaplar, Robert J., Gunning, Brendan P., Anderson, Travis J.

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Multi-Layer Hybrid Edge Termination for III-N Power Devices von Jacobs, Alan G, Hontz, Michael Robert, Hobart, Karl D, Ebrish, Mona A, Anderson, Travis J, Nelson, Tolen Michael, Pandey, Prakash, Khanna, Raghav, Porter, Matthew A, Koehler, Andrew D, Georgiev, Daniel G

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