Epitaxial Structures for Low-Barrier Mixing Microwave Diodes Grown on a GaAs Substrate von Samartsev, I. V., Nekorkin, S. M., Zvonkov, B. N., Rykov, A. V., Chigineva, A. B., Chechenin, Yu. I., Chilikov, A. A., Pankov, S. V.

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GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells von Dikareva, N. V., Zvonkov, B. N., Samartsev, I. V., Nekorkin, S. M., Baidus, N. V., Dubinov, A. A.

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Methods for Switching Radiation Polarization in GaAs Laser Diodes von Dorokhin, M. V., Zvonkov, B. N., Demina, P. B., Dikareva, N. V., Zdoroveishchev, A. V., Kudrin, A. V., Vikhrova, O. V., Samartsev, I. V., Nekorkin, S. M.

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Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD von Aleshkin, V. Ya, Baidus, N. V., Dubinov, A. A., Kudryavtsev, K. E., Nekorkin, S. M., Kruglov, A. V., Reunov, D. G.

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MOS-Hydride Epitaxy Growth of InGaAs/GaAs Submonolayer Quantum Dots for the Excitation of Surface Plasmon–Polaritons von Baidus, N. V., Kukushkin, V. A., Nekorkin, S. M., Kruglov, A. V., Reunov, D. G.

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1.06 μm wavelength photodetectors with metamorphic buffer layers grown on GaAs substrates von Samartsev, I V, Nekorkin, S M, Zvonkov, B N, Dikareva, N V, Zdoroveyshchev, A V, Rykov, A V, Baidus, N V

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Power characteristics of lasers with quantum-well waveguides and blocking layers von Afonenko, A.A., Ushakov, D.V., Aleshkin, V.Ya, Dubinov, A.A., Dikareva, N.V., Nekorkin, S.M., Zvonkov, B.N.

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Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes von Baidus, N. V., Kukushkin, V. A., Zvonkov, B. N., Nekorkin, S. M.

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Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates von Samartsev, I. V., Nekorkin, S. M., Zvonkov, B. N., Aleshkin, V. Ya, Dubinov, A. A., Pashenkin, I. J., Dikareva, N. V., Chigineva, A. B.

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Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well von Dikareva, N. V., Zvonkov, B. N., Vikhrova, O. V., Nekorkin, S. M., Aleshkin, V. Ya, Dubinov, A. A.

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Optical thyristor based on GaAs/InGaP materials von Zvonkov, B. N., Baidus, N. V., Nekorkin, S. M., Vikhrova, O. V., Zdoroveyshev, A. V., Kudrin, A. V., Kotomina, V. E.

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Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates von Baidus, N. V., Aleshkin, V. Ya, Dubinov, A. A., Kudryavtsev, K. E., Nekorkin, S. M., Novikov, A. V., Pavlov, D. A., Rykov, A. V., Sushkov, A. A., Shaleev, M. V., Yunin, P. A., Yurasov, D. V., Yablonskiy, A. N., Krasilnik, Z. F.

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The dependence of relaxation kinetics of photoluminescence from interband transitions in InGaAs/GaAs quantum wells on their distance from an interface with Au von Kukushkin, V. A., Baidus, N. V., Nekorkin, S. M., Kuritsyn, D. I., Zdoroveischev, A. V.

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On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates von Aleshkin, V. Ya, Baidus, N. V., Dubinov, A. A., Krasilnik, Z. F., Nekorkin, S. M., Novikov, A. V., Rykov, A. V., Yurasov, D. V., Yablonskiy, A. N.

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On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si S... von Baidus, N. V., Aleshkin, V. Ya, Dubinov, A. A., Krasilnik, Z. F., Kudryavtsev, K. E., Nekorkin, S. M., Novikov, A. V., Rykov, A. V., Reunov, D. G., Shaleev, M. V., Yunin, P. A., Yurasov, D. V.

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Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate von Aleshkin, V. Ya, Baidus, N. V., Dubinov, A. A., Kudryavtsev, K. E., Nekorkin, S. M., Novikov, A. V., Rykov, A. V., Samartsev, I. V., Fefelov, A. G., Yurasov, D. V., Krasilnik, Z. F.

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Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate von Nekorkin, S. M., Zvonkov, B. N., Baidus, N. V., Dikareva, N. V., Vikhrova, O. V., Afonenko, A. A., Ushakov, D. V.

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Method for narrowing the directional pattern of an InGaAs/GaAs/AlGaAs multiwell heterolaser von Baydus, N. V., Nekorkin, S. M., Kolpakov, D. A., Ershov, A. V., Aleshkin, V. Ya, Dubinov, A. A., Afonenko, A. A.

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Stimulated Emission at 1.3-μm Wavelength in Metamorphic InGaAs/InGaAsP Structure with Quantum Wells Grown on Ge/Si(001) Substrate von Aleshkin, V. Ya, Baidus, N. V., Vikhrova, O. V., Dubinov, A. A., Zvonkov, B. N., Krasilnik, Z. F., Kudryavtsev, K. E., Nekorkin, S. M., Novikov, A. V., Rykov, A. V., Samartsev, I. V., Yurasov, D. V.

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Nonlinear harmonic mixing in an InGaAs/InGaP/GaAs laser on a germanium substrate von Dikareva, N.V., Nekorkin, S.M., Zvonkov, B.N., Aleshkin, V.Ya, Dubinov, A.A.

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