Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films von Chernikova, Anna G, Kozodaev, Maxim G, Negrov, Dmitry V, Korostylev, Evgeny V, Park, Min Hyuk, Schroeder, Uwe, Hwang, Cheol Seong, Markeev, Andrey M

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Electron beam-induced current imaging of ferroelectric domains and local polarization reversal in Hf0.5Zr0.5O2 von Korostylev, Evgeny, Mikheev, Vitalii, Chernikova, Anna G., Zhuk, Maksim Yu, Chouprik, Anastasia, Negrov, Dmitry V.

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Bottom‐Electrode Nanoasperities as a Root of the High‐Performance Resistive‐Switching Effect von Kuzmichev, Dmitry S., Chouprik, Anastasia A., Slavich, Aleksandr S., Kirtaev, Roman V., Negrov, Dmitry V.

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Improved Ferroelectric Switching Endurance of La-Doped Hf 0.5 Zr 0.5 O 2 Thin Films von Chernikova, Anna G., Kozodaev, Maxim G., Negrov, Dmitry V., Korostylev, Evgeny V., Park, Min Hyuk, Schroeder, Uwe, Hwang, Cheol Seong, Markeev, Andrey M.

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Thermal expanded graphite as field emitter for display matrix element formation von Raufov, A S, Leychenko, A S, Negrov, D V, Sheshin, E P

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