Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots von Joyce, P.B, Krzyzewski, T.J, Steans, P.H, Bell, G.R, Neave, J.H, Jones, T.S

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Growth of InAs/InP(0 0 1) nanostructures: The transition from quantum wires to quantum dots von Parry, H.J., Ashwin, M.J., Neave, J.H., Jones, T.S.

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Reflection high-energy electron diffraction oscillations from vicinal surfaces ― a new approach to surface diffusion measurements von NEAVE, J. H, DOBSON, P. J, JOYCE, B. A, ZHANG, J

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SiGe quantum cascade structures for light emitting devices von Zhang, J., Li, X.B., Neave, J.H., Norris, D.J., Cullis, A.G., Kelsall, R.W., Lynch, S., Towsend, P., Paul, D.J., Fewster, P.F.

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GSMBE growth and structural characterisation of SiGeC layers for HBT von Zhang, J., Neave, J.H., Li, X.B., Fewster, P.F., El Mubarek, H.A.W., Ashburn, P., Mitrovic, I.Z., Buiu, O., Hall, S.

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Arsenic incorporation kinetics in GaAs(001) homoepitaxy revisited von Tok, E.S., Neave, J.H., Zhang, J., Joyce, B.A., Jones, T.S.

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A model for the appearance of chevrons on RHEED patterns from InAs quantum dots von Pashley, D.W., Neave, J.H., Joyce, B.A.

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Surface morphology of InP thin films grown on InP(001) by solid source molecular beam epitaxy von Parry, H J, Ashwin, M J, Neave, J H, Jones, T S

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Phosphorus incorporation during InP(0 0 1) homoepitaxial growth by solid source molecular beam epitaxy von Barnes, G.W., Tok, E.S., Neave, J.H., Jones, T.S.

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Variations in critical coverage for InAs/GaAs quantum dot formation in bilayer structures von Joyce, P.B, Krzyzewski, T.J, Steans, P.H, Bell, G.R, Neave, J.H, Jones, T.S

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Interplay of growing facets during self-assembled growth of GaAs on patterned substrates von Chandrinou, C, Ashwin, M J, Neave, J H, Jones, T S

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A comparison between GaAs and AlAs deposition on patterned substrates von Williams, R.S., Ashwin, M.J., Jones, T.S., Neave, J.H.

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Dynamics of film growth of GaAs by MBE from Rheed observations von Neave, J. H., Joyce, B. A., Dobson, P. J., Norton, N.

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A real-time investigation by RHEED of the homoepitaxial growth of GaAs on (001) oriented surfaces von Pashley, D.W., Neave, J.H., Joyce, B.A.

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GA ADATOM INCORPORATION KINETICS AT STEPS ON VICINAL GAAS(001) SURFACES DURING GROWTH OF GAAS BY MOLECULAR-BEAM EPITAXY von SHITARA, T, ZHANG, J, NEAVE, JH, JOYCE, BA

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Comment on “A new mechanism for reentrant behaviour in semiconductor epitaxy: a reflection high-energy electron diffraction study of the growth of GaAs [formula omitted]A thin film... von Tok, E.S, Neave, J.H, Zhang, J

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Is the arsenic incorporation kinetics important when growing GaAs(001), (110), and (111)A films? von Tok, E. S., Jones, T. S., Neave, J. H., Zhang, J., Joyce, B. A.

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Optical characterization of GaAs pyramid microstructures formed by molecular beam epitaxial regrowth on pre-patterned substrates von Pritchard, R. E., Oulton, R. F., Stavrinou, P. N., Parry, G., Williams, R. S., Ashwin, M. J., Neave, J. H., Jones, T. S.

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Quantitative comparison of surface morphology and reflection high-energy electron diffraction intensity for epitaxial growth on GaAs von Bell, G.R., Jones, T.S., Neave, J.H., Joyce, B.A.

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Growth of Si-doped GaAs(110) thin films by molecular beam epitaxy; Si site occupation and the role of arsenic von Tok, E. S., Neave, J. H., Ashwin, M. J., Joyce, B. A., Jones, T. S.

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