Modeling of MOS Radiation and Post Irradiation Effects von Neamen, D. A.

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SOS Device radiation effects and hardening von Buchanan, B.L., Neamen, D.A., Shedd, W.M.

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Fast Neutron Effects on GaAsP Schottky Barrier Diodes and Hall Effect Devices von Neamen, D. A., Grannemann, W. W.

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Experimental Determination of the Generation Rate Conversion Factor Using a Pulse of Ionizing Radiation of Arbitrary Shape von Neamen, D. A., Grannemann, W. W.

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Electrical characteristics of GaAsP Schottky barrier diodes von Neamen, D.A., Grannemann, W.W.

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Rapid Anneal of Radiation-Induced Silicon-Sapphire Interface Charge Trapping von Neamen, Don A.

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Radiation Effects on Gallium Arsenide Phosphide and Gallium Phosphide Schottky Barrier Diodes von Neamen,D A, Grannemann,W W

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The Effect of Operating Frequency in the Radiation Induced Buildup of Trapped Holes and Interface States in MOS Devices von Stanley, T., Neamen, D., Dressendorfer, P., Schwank, J., Winokur, P., Ackermann, M., Jungling, K., Hawkins, C., Grannemann, W.

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Silicon-sapphire interface charge trapping - effects of sapphire type and EPI growth conditions von Neamen, D., Buchanan, B.

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Radiation induced charge trapping at the silicon sapphire substrate interface von Neamen, D., Shedd, W., Buchanan, B.

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Thin Film Silicon on Silicon Nitride for Radiation Hardened Dielectrically Isolated Misfet's von Neamen, D., Shedd, W., Buchanan, B.

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Ionizing Radiation Effects in SOS Structures von Neamen, D., Buchanan, B., Shedd, W.

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Permanent Ionizing Radiation Effects in Dielectrically Bounded Field Effect Transistors von Neamen, D., Shedd, W., Buchanan, B.

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Effects of Ionizing Radiation on Dielectrically Isolated Junction Field Effect Transistors von Neamen, D., Shedd, W., Buchanan, B.

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Permanent Ionizing Radiation Effects in Dielectrically Bounded Field Effect Transistors von Neamen,D, Shedd,W, Buchanan,B

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